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BSS84 P-Channel MOSFET

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by adom

-50 V P-channel enhancement MOSFET in SOT-23 for high-side switching and level shifting.

mosfetp-channelsmall-signalsot-23high-sidediodes
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
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docs bss84: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
viewers viewers · Ray
bss84-etched.fit.json bss84: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
bss84-etched.glb bss84: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
bss84-etched.step bss84: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
bss84.glb Publish 0.1.0 · Ray
bss84.kicad_mod Publish 0.1.0 · Ray
bss84.kicad_sym Publish 0.1.0 · Ray
bss84.lbr add validated EAGLE .lbr (Fusion library) · Ray
bss84.step Publish 0.1.0 · Ray
package.json Publish 0.1.0 · Ray
page.json bss84: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray
README.md bss84: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray

BSS84

Diodes Incorporated · MOSFET · SOT-23

The BSS84 is a P-channel enhancement-mode MOSFET rated for -50 V and about -130 mA in a SOT-23 package. It is used for high-side load switching, reverse-polarity protection, and level shifting, and is the P-channel complement of the N-channel BSS138.

Pinout

Pin Name Type Function
1 G input Gate. Enhancement-mode P-channel control terminal. VGS(TH) between -0.8V and -2.0V; drive to -5V or more negative (up to ±20V max VGSS) to fully enhance the channel.
2 S passive Source. Reference terminal for VGS. Body diode anode connects internally to source (P-channel body diode from drain to source).
3 D passive Drain. Switched terminal. -50V max VDSS; -130mA continuous ID, -1.2A pulsed IDM. RDS(ON) typ 3.2Ω / 10Ω max at VGS=-5V, ID=-100mA.

Key specifications

Parameter Value
Type P-channel enhancement MOSFET
Drain-source voltage (VDS) -50 V
Continuous drain current (ID) -130 mA
On-resistance (RDS(on)) 10 ohm max at VGS = -10 V
Gate threshold voltage -0.8 V to -3 V
Power dissipation 360 mW
Operating temperature -55 C to 150 C

Ordering variants

  • BSS84-7-F
  • BSS84-13-F

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -50 V 2
Drain-Gate Voltage VDGR -50 V RGS ≤ 20kΩ 2
Gate-Source Voltage Continuous VGSS -20 20 V 2
Drain Current Continuous ID -130 mA 2
Pulsed Drain Current IDM -1.2 A 2
Total Power Dissipation PD 300 mW 2
Thermal Resistance, Junction to Ambient RθJA 417 °C/W 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS -50 V VGS = 0, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -50V, VGS = 0, TJ = +25°C 2
Zero Gate Voltage Drain Current IDSS -2 µA VDS = -50V, VGS = 0, TJ = +125°C 2
Zero Gate Voltage Drain Current IDSS -100 nA VDS = -25V, VGS = 0, TJ = +25°C 2
Gate-Body Leakage IGSS -10 10 nA VGS = ±20V, VDS = 0 2
Gate Threshold Voltage VGS(TH) -0.8 -2 V VDS = VGS, ID = -1mA 2
Static Drain-Source On-Resistance RDS(ON) 3.2 10 Ω VGS = -5V, ID = -0.100A 2
Forward Transconductance gFS 0.05 S VDS = -25V, ID = -0.1A 2
Input Capacitance Ciss 24.6 45 pF 2
Output Capacitance Coss 4.7 25 pF VDS = -25V, VGS = 0, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 2.8 12 pF 2
Total Gate Charge (VGS = -4.5V) Qg 0.28 nC VDS = -10V, ID = -0.1A 2
Total Gate Charge (VGS = -10V) Qg 0.59 nC VDS = -10V, ID = -0.1A 2
Gate-Source Charge Qgs 0.09 nC 2
Gate-Drain Charge Qgd 0.08 nC 2
Gate Resistance Rg 916 Ω VDS = 0, VGS = 0, f = 1MHz 2
Turn-On Delay Time tD(ON) 10 ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V 2
Turn-Off Delay Time tD(OFF) 18 ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V 2

CAD (KiCad official)

  • Symbol: bss84.kicad_sym
  • Footprint: bss84.kicad_mod
  • 3D model: SOT-23 body from KiCad Package_TO_SOT_SMD/SOT-23.
  • 3D model files: bss84-etched.step / bss84-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss84.step / bss84.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 a4e89efffb9e0283, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF