main
Ray Set visibility: public 5e81991 17d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "bss806nh6327-hxy",
  "title": "BSS806NH6327-HXY",
  "brief": "HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "bss806nh6327-hxy",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "BSS806NH6327-HXY",
    "manufacturer": "HXY MOSFET",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758117663811870720",
    "parts": {
      "symbol": "bss806nh6327-hxy.kicad_sym",
      "footprint": "bss806nh6327-hxy.kicad_mod",
      "model_3d": "bss806nh6327-hxy-hero.glb",
      "model_3d_plain": "bss806nh6327-hxy-etched.glb",
      "model_3d_step": "bss806nh6327-hxy-etched.step",
      "model_3d_step_plain": "bss806nh6327-hxy.step",
      "lbr": "bss806nh6327-hxy.lbr"
    },
    "distributor_links": {
      "lcsc": "C20606241"
    },
    "distributor_check": {
      "checked_at": "2026-10-18T01:09:13Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±12 V (VGS) and the gate threshold is 0.5 V to 1.2 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; drain-source voltage is rated 20 V, continuous drain current 3.0 A, and pulsed drain current 16 A."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; it is the reference for VGS, and the diode forward current is rated at 3.3 A maximum."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet's pin callouts are PIN1 G, PIN2 D, PIN3 S, which is the reverse of the common SOT-23 M; The pinout is taken from the pin callouts in the datasheet text (page 1). The text does not include "
        ],
        "pages_sent": 6,
        "cost_usd": 0.0328,
        "at": "2026-10-18T01:07:13"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758117663811870720",
        "pages": 6,
        "sha256": "84dde733cd065c8a",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "bss806nh6327-hxy.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          2.5,
          3,
          1.2
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "dd5d1711204e1d8d26cd11490923bd84340820baa69538c385a4300ec2539bc0",
        "checked": "2026-10-18",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "bss806nh6327-hxy-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          2.5,
          3,
          1.2
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "adbdf769a337ec2e38107adc256e7b9cc5fd5bf5c51c9a3e8e8c6be7434e166a",
        "checked": "2026-10-18",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "SOT-23",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "84dde733cd065c8a30b3680c4963ff6e9de27f950cb11cdf5c2eff78ccd4e4ea",
      "rows": [
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -12,
          "typ": null,
          "max": 12,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Continuous",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 3,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current-Pulsed",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 16,
          "conditions": "Note 1: repetitive rating, pulse width limited by maximum junction temperature",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 0.9,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ,TSTG",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Ambient",
          "symbol": "θJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 139,
          "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 20,
          "typ": 22,
          "max": null,
          "conditions": "VGS=0V ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=20V,VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±12V,VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 0.5,
          "typ": 0.75,
          "max": 1.2,
          "conditions": "VDS=VGS,ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 48,
          "max": 60,
          "conditions": "VGS=2.5V, ID=2.0A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-State Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 45,
          "max": 53,
          "conditions": "VGS=4.5V, ID=2.8A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Total Gate Charge",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 2.9,
          "max": 5,
          "conditions": "VDS=10V,ID=2.8A, VGS=4.5V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.75,
          "max": 1.2,
          "conditions": "VGS=0V,IS=2.8A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 3.3,
          "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "bss806nh6327-hxy"
  ],
  "discovery_pitch": "BSS806NH6327-HXY (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "bss806nh6327-hxy.kicad_sym",
    "bss806nh6327-hxy.kicad_mod",
    "bss806nh6327-hxy.glb",
    "bss806nh6327-hxy.step",
    "bss806nh6327-hxy.lbr",
    "docs/hero.png",
    "docs/bss806nh6327-hxy-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "bss806nh6327-hxy-hero.glb",
    "bss806nh6327-hxy-hero.overlay.json",
    "bss806nh6327-hxy-etched.glb"
  ],
  "visibility": {
    "public": true
  }
}