component
BSS806NH6327-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| bss806nh6327-hxy-etched.step | 17d ago |
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| README.md | 17d ago |
BSS806NH6327-HXY
HXY MOSFET · MOSFETs · SOT-23
BSS806NH6327-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±12 V (VGS) and the gate threshold is 0.5 V to 1.2 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated 20 V, continuous drain current 3.0 A, and pulsed drain current 16 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; it is the reference for VGS, and the diode forward current is rated at 3.3 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 3 | A | 1 | |||
| Drain Current-Pulsed | IDM | 16 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 0.9 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | θJA | 139 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 48 | 60 | mΩ | VGS=2.5V, ID=2.0A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 45 | 53 | mΩ | VGS=4.5V, ID=2.8A | 2 | |
| Total Gate Charge | Qg | 2.9 | 5 | nC | VDS=10V,ID=2.8A, VGS=4.5V | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1.2 | V | VGS=0V,IS=2.8A | 2 | |
| Diode Forward Current | IS | 3.3 | A | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 2 |
CAD (KiCad official)
- Symbol:
BSS806NH6327-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss806nh6327-hxy-etched.step/bss806nh6327-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss806nh6327-hxy.step/bss806nh6327-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
84dde733cd065c8a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).