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BSS315PH6327XTSA1
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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSS315PH6327XTSA1
Infineon Technologies · MOSFETs · SOT-23
BSS315PH6327XTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel enhancement-mode MOSFET, with a V_GS rating of ±20 V and a logic-level drive of 4.5 V (R_DS(on) max 270 mΩ). |
| 2 | S | passive | Source of the P-channel MOSFET, shown at the bottom of the symbol, with a continuous drain current rating of -1.5 A at T_A=25 °C. |
| 3 | D | passive | Drain of the P-channel MOSFET, shown at the top of the symbol with the body diode, with V_DS of 30 V and pulsed drain current of -6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current, T_A=25 °C | ID | -1.5 | A | TA=25 °C | 1 | ||
| Continuous drain current, T_A=70 °C | ID | -1.18 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | -6 | A | TA=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 11 | mJ | ID=-1.5 A, RGS=25 Ω | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=-1.5 A, VDS=-16V, di/dt=-200A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.5 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Thermal resistance, junction - ambient | RthJA | 250 | K/W | minimal footprint | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -2 | -1.5 | -1 | V | VDS=VGS, ID=-11µA | 2 |
| Drain-source leakage current | IDSS | -1 | μA | VDS=-30V, VGS=0V, Tj=25 °C | 2 | ||
| Drain-source leakage current | IDSS | -100 | μA | VDS=-30V, VGS=0V, Tj=150 °C | 2 | ||
| Gate-source leakage current | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 177 | 270 | mΩ | VGS=-4.5 V, ID=-1.1 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 113 | 150 | mΩ | VGS=-10 V, ID=-1.5 A | 2 | |
| Input capacitance | Ciss | 212 | 282 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 69 | 91 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 56 | 84 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 | |
| Diode continuous forward current | IS | -0.5 | A | 3 | |||
| Diode pulse current | IS,pulse | -6 | A | 3 | |||
| Diode forward voltage | VSD | -0.86 | -1.1 | V | VGS=0 V, IF=-1.5 A, Tj=25 °C | 3 |
CAD (KiCad official)
- Symbol:
BSS315PH6327XTSA1 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss315ph6327xtsa1-etched.step/bss315ph6327xtsa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss315ph6327xtsa1.step/bss315ph6327xtsa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
6f1c106460d0f21b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSS315PH6327XTSA1
**Infineon Technologies** · MOSFETs · SOT-23
BSS315PH6327XTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel enhancement-mode MOSFET, with a V_GS rating of ±20 V and a logic-level drive of 4.5 V (R_DS(on) max 270 mΩ). |
| 2 | S | passive | Source of the P-channel MOSFET, shown at the bottom of the symbol, with a continuous drain current rating of -1.5 A at T_A=25 °C. |
| 3 | D | passive | Drain of the P-channel MOSFET, shown at the top of the symbol with the body diode, with V_DS of 30 V and pulsed drain current of -6 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current, T_A=25 °C | ID | | | -1.5 | A | TA=25 °C | 1 |
| Continuous drain current, T_A=70 °C | ID | | | -1.18 | A | TA=70 °C | 1 |
| Pulsed drain current | ID,pulse | | | -6 | A | TA=25 °C | 1 |
| Avalanche energy, single pulse | EAS | | | 11 | mJ | ID=-1.5 A, RGS=25 Ω | 1 |
| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | ID=-1.5 A, VDS=-16V, di/dt=-200A/µs, Tj,max=150 °C | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Power dissipation | Ptot | | | 0.5 | W | TA=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Soldering temperature | | | | 260 | °C | | 1 |
| Thermal resistance, junction - ambient | RthJA | | | 250 | K/W | minimal footprint | 2 |
| Drain-source breakdown voltage | V(BR)DSS | -30 | | | V | VGS=0V, ID=-250µA | 2 |
| Gate threshold voltage | VGS(th) | -2 | -1.5 | -1 | V | VDS=VGS, ID=-11µA | 2 |
| Drain-source leakage current | IDSS | | | -1 | μA | VDS=-30V, VGS=0V, Tj=25 °C | 2 |
| Drain-source leakage current | IDSS | | | -100 | μA | VDS=-30V, VGS=0V, Tj=150 °C | 2 |
| Gate-source leakage current | IGSS | | | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Drain-source on-state resistance | RDS(on) | | 177 | 270 | mΩ | VGS=-4.5 V, ID=-1.1 A | 2 |
| Drain-source on-state resistance | RDS(on) | | 113 | 150 | mΩ | VGS=-10 V, ID=-1.5 A | 2 |
| Input capacitance | Ciss | | 212 | 282 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 |
| Output capacitance | Coss | | 69 | 91 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 |
| Reverse transfer capacitance | Crss | | 56 | 84 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 |
| Diode continuous forward current | IS | | | -0.5 | A | | 3 |
| Diode pulse current | IS,pulse | | | -6 | A | | 3 |
| Diode forward voltage | VSD | | -0.86 | -1.1 | V | VGS=0 V, IF=-1.5 A, Tj=25 °C | 3 |
## CAD (KiCad official)
- Symbol: `BSS315PH6327XTSA1`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss315ph6327xtsa1-etched.step` / `bss315ph6327xtsa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss315ph6327xtsa1.step` / `bss315ph6327xtsa1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590415636980662272) (9 pp, sha256 `6f1c106460d0f21b`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bss315ph6327xtsa1-datasheet.pdf)