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BSS315PH6327XTSA1

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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS315PH6327XTSA1

Infineon Technologies · MOSFETs · SOT-23

BSS315PH6327XTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel enhancement-mode MOSFET, with a V_GS rating of ±20 V and a logic-level drive of 4.5 V (R_DS(on) max 270 mΩ).
2 S passive Source of the P-channel MOSFET, shown at the bottom of the symbol, with a continuous drain current rating of -1.5 A at T_A=25 °C.
3 D passive Drain of the P-channel MOSFET, shown at the top of the symbol with the body diode, with V_DS of 30 V and pulsed drain current of -6 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current, T_A=25 °C ID -1.5 A TA=25 °C 1
Continuous drain current, T_A=70 °C ID -1.18 A TA=70 °C 1
Pulsed drain current ID,pulse -6 A TA=25 °C 1
Avalanche energy, single pulse EAS 11 mJ ID=-1.5 A, RGS=25 Ω 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=-1.5 A, VDS=-16V, di/dt=-200A/µs, Tj,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 0.5 W TA=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Soldering temperature 260 °C 1
Thermal resistance, junction - ambient RthJA 250 K/W minimal footprint 2
Drain-source breakdown voltage V(BR)DSS -30 V VGS=0V, ID=-250µA 2
Gate threshold voltage VGS(th) -2 -1.5 -1 V VDS=VGS, ID=-11µA 2
Drain-source leakage current IDSS -1 μA VDS=-30V, VGS=0V, Tj=25 °C 2
Drain-source leakage current IDSS -100 μA VDS=-30V, VGS=0V, Tj=150 °C 2
Gate-source leakage current IGSS -100 nA VGS=-20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 177 270 mΩ VGS=-4.5 V, ID=-1.1 A 2
Drain-source on-state resistance RDS(on) 113 150 mΩ VGS=-10 V, ID=-1.5 A 2
Input capacitance Ciss 212 282 pF VGS=0 V, VDS=15 V, f=1 MHz 3
Output capacitance Coss 69 91 pF VGS=0 V, VDS=15 V, f=1 MHz 3
Reverse transfer capacitance Crss 56 84 pF VGS=0 V, VDS=15 V, f=1 MHz 3
Diode continuous forward current IS -0.5 A 3
Diode pulse current IS,pulse -6 A 3
Diode forward voltage VSD -0.86 -1.1 V VGS=0 V, IF=-1.5 A, Tj=25 °C 3

CAD (KiCad official)

  • Symbol: BSS315PH6327XTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss315ph6327xtsa1-etched.step / bss315ph6327xtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss315ph6327xtsa1.step / bss315ph6327xtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 6f1c106460d0f21b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF