# BSS308PEH6327

**Infineon Technologies** · MOSFETs · SOT-23

BSS308PEH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel enhancement-mode MOSFET, logic level (4.5 V rated), ESD protected (HBM class 2), with VGS maximum ±20 V and VGS(th) -1.0 to -2.0 V. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the body diode, with continuous diode forward current IS of -0.4 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated VDS -30 V, continuous ID -2.0 A at TA=25 °C and RDS(on) max 80 mΩ at VGS=-10 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous drain current | ID |  |  | -2 | A | TA=25 °C | 1 |
| Continuous drain current | ID |  |  | -1.6 | A | TA=70 °C | 1 |
| Pulsed drain current | ID,pulse |  |  | -8 | A | TA=25 °C | 1 |
| Avalanche energy, single pulse | EAS |  |  | -10.7 | mJ | ID=-2 A, RGS=25 Ω | 1 |
| Reverse diode dv/dt | dv/dt |  |  | 6 | kV/µs | ID=-2 A, VDS=-16V, di/dt=-200A/µs, Tj,max=150 °C | 1 |
| Power dissipation | Ptot |  |  | 0.5 | W | TA=25 °C | 1 |
| Soldering temperature |  |  |  | 260 | °C |  | 1 |
| Thermal resistance, junction - ambient | RthJA |  |  | 250 | K/W | minimal footprint | 2 |
| Drain-source breakdown voltage | V(BR)DSS | -30 |  |  | V | VGS=0V, ID=-250µA | 2 |
| Gate threshold voltage | VGS(th) | -2 | -1.5 | -1 | V | VDS=VGS, ID=-11µA | 2 |
| Drain-source leakage current | IDSS |  |  | -1 | µA | VDS=-30V, VGS=0 V, Tj=25 °C | 2 |
| Drain-source leakage current | IDSS |  |  | -100 | μA | VDS=-30V, VGS=0V, Tj=150 °C | 2 |
| Gate-source leakage current | IGSS |  |  | -5 | µA | VGS=-20V, VDS=0V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 88 | 130 | mΩ | VGS=-4.5 V, ID=-1.7 A | 2 |
| Drain-source on-state resistance | RDS(on) |  | 62 | 80 | mΩ | VGS=-10 V, ID=-2 A | 2 |
| Diode continuous forward current | IS |  |  | -0.4 | A |  | 3 |
| Diode pulse current | IS,pulse |  |  | -8.4 | A |  | 3 |
| Input capacitance | Ciss |  | 376 | 500 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 |
| Output capacitance | Coss |  | 196 | 261 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 |
| Reverse transfer capacitance | Crss |  | 12 | 18 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 |
| Diode forward voltage | VSD |  | -0.8 | -1.1 | V | VGS=0 V, IF=-2 A, Tj=25 °C | 3 |
| Transconductance | gfs |  | 4.6 |  | S | /VDS/>2/ID/RDS(on)max, ID=-1.6 A | 2 |
| Turn-on delay time | td(on) |  | 5.6 |  | ns | VDD=-15V, VGS=-10 V, ID=-2 A, RG=6 Ω | 3 |
| Rise time | tr |  | 7.7 |  | ns | VDD=-15V, VGS=-10 V, ID=-2 A, RG=6 Ω | 3 |
| Turn-off delay time | td(off) |  | 15.3 |  | ns | VDD=-15V, VGS=-10 V, ID=-2 A, RG=6 Ω | 3 |
| Fall time | tf |  | 2.8 |  | ns | VDD=-15V, VGS=-10 V, ID=-2 A, RG=6 Ω | 3 |
| Gate to source charge | Qgs |  | -1.2 |  | nC | VDD=-15 V, ID=-2 A, VGS=0 to -10 V | 3 |
| Gate to drain charge | Qgd |  | -0.6 |  | nC | VDD=-15 V, ID=-2 A, VGS=0 to -10 V | 3 |
| Gate charge total | Qg |  | -5 |  | nC | VDD=-15 V, ID=-2 A, VGS=0 to -10 V | 3 |
| Gate plateau voltage | Vplateau |  | -3.1 |  | V | VDD=-15 V, ID=-2 A, VGS=0 to -10 V | 3 |
| Reverse recovery time | trr |  | 14 |  | ns | VR=10 V, IF=-2 A, diF/dt=100 A/µs, TA=25 °C | 3 |
| Reverse recovery charge | Qrr |  | -5.9 |  | nC | VR=10 V, IF=-2 A, diF/dt=100 A/µs, TA=25 °C | 3 |

## CAD (KiCad official)

- Symbol: `BSS308PEH6327`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss308peh6327-etched.step` / `bss308peh6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss308peh6327.step` / `bss308peh6327.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/bss308peh6327-datasheet.pdf) (9 pp, sha256 `5d989dba6a41c2be`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss308peh6327-datasheet.pdf)