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BSS308PEH6327

Infineon Technologies · MOSFETs · SOT-23

BSS308PEH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel enhancement-mode MOSFET, logic level (4.5 V rated), ESD protected (HBM class 2), with VGS maximum ±20 V and VGS(th) -1.0 to -2.0 V.
2 S passive Source of the P-channel MOSFET, connected to the body diode, with continuous diode forward current IS of -0.4 A.
3 D passive Drain of the P-channel MOSFET, rated VDS -30 V, continuous ID -2.0 A at TA=25 °C and RDS(on) max 80 mΩ at VGS=-10 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating and storage temperature Tj, Tstg -55 150 °C 1
Gate source voltage VGS -20 20 V 1
Continuous drain current ID -2 A TA=25 °C 1
Continuous drain current ID -1.6 A TA=70 °C 1
Pulsed drain current ID,pulse -8 A TA=25 °C 1
Avalanche energy, single pulse EAS -10.7 mJ ID=-2 A, RGS=25 Ω 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=-2 A, VDS=-16V, di/dt=-200A/µs, Tj,max=150 °C 1
Power dissipation Ptot 0.5 W TA=25 °C 1
Soldering temperature 260 °C 1
Thermal resistance, junction - ambient RthJA 250 K/W minimal footprint 2
Drain-source breakdown voltage V(BR)DSS -30 V VGS=0V, ID=-250µA 2
Gate threshold voltage VGS(th) -2 -1.5 -1 V VDS=VGS, ID=-11µA 2
Drain-source leakage current IDSS -1 µA VDS=-30V, VGS=0 V, Tj=25 °C 2
Drain-source leakage current IDSS -100 μA VDS=-30V, VGS=0V, Tj=150 °C 2
Gate-source leakage current IGSS -5 µA VGS=-20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 88 130 mΩ VGS=-4.5 V, ID=-1.7 A 2
Drain-source on-state resistance RDS(on) 62 80 mΩ VGS=-10 V, ID=-2 A 2
Diode continuous forward current IS -0.4 A 3
Diode pulse current IS,pulse -8.4 A 3
Input capacitance Ciss 376 500 pF VGS=0 V, VDS=-15 V, f=1 MHz 3
Output capacitance Coss 196 261 pF VGS=0 V, VDS=-15 V, f=1 MHz 3
Reverse transfer capacitance Crss 12 18 pF VGS=0 V, VDS=-15 V, f=1 MHz 3
Diode forward voltage VSD -0.8 -1.1 V VGS=0 V, IF=-2 A, Tj=25 °C 3
Transconductance gfs 4.6 S /VDS/>2/ID/RDS(on)max, ID=-1.6 A 2
Turn-on delay time td(on) 5.6 ns VDD=-15V, VGS=-10 V, ID=-2 A, RG=6 Ω 3
Rise time tr 7.7 ns VDD=-15V, VGS=-10 V, ID=-2 A, RG=6 Ω 3
Turn-off delay time td(off) 15.3 ns VDD=-15V, VGS=-10 V, ID=-2 A, RG=6 Ω 3
Fall time tf 2.8 ns VDD=-15V, VGS=-10 V, ID=-2 A, RG=6 Ω 3
Gate to source charge Qgs -1.2 nC VDD=-15 V, ID=-2 A, VGS=0 to -10 V 3
Gate to drain charge Qgd -0.6 nC VDD=-15 V, ID=-2 A, VGS=0 to -10 V 3
Gate charge total Qg -5 nC VDD=-15 V, ID=-2 A, VGS=0 to -10 V 3
Gate plateau voltage Vplateau -3.1 V VDD=-15 V, ID=-2 A, VGS=0 to -10 V 3
Reverse recovery time trr 14 ns VR=10 V, IF=-2 A, diF/dt=100 A/µs, TA=25 °C 3
Reverse recovery charge Qrr -5.9 nC VR=10 V, IF=-2 A, diF/dt=100 A/µs, TA=25 °C 3

CAD (KiCad official)

  • Symbol: BSS308PEH6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss308peh6327-etched.step / bss308peh6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss308peh6327.step / bss308peh6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 5d989dba6a41c2be, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF