component
BSS308PE
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSS308PE
UMW · MOSFETs · SOT-23
BSS308PE from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet states the device operates with gate voltages as low as 2.5V and the gate-source voltage is rated at ±20V. |
| 2 | S | passive | SOURCE terminal of the P-channel MOSFET, part of the device rated at VDS = -30V. |
| 3 | D | passive | DRAIN terminal of the P-channel MOSFET; the datasheet rates continuous drain current ID at -2 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-11µA | 2 |
| Drain-source leakage current | IDSS | -1 | μA | VDS=-30V,VGS=0V,TJ=25°C | 2 | ||
| Gate-source leakage current | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 90 | mΩ | VGS=-4.5V, ID=-1.7A | 2 | ||
| Drain-source on-state resistance | RDS(on) | 70 | mΩ | VGS=-10V, ID=-2A | 2 | ||
| Input capacitance | Ciss | 376 | 500 | pF | VDS=0V, VGS=-15V, f=1MHz | 3 | |
| Output capacitance | Coss | 196 | 261 | pF | VDS=0V, VGS=-15V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 12 | 18 | pF | VDS=0V, VGS=-15V, f=1MHz | 3 | |
| Diode forward voltage | VSD | -1.1 | V | VGS=0V, IF=-2V, TJ=25°C | 3 | ||
| Drain current (TA=25°C) | ID | -2 | A | TA=25 °C | 1 | ||
| Drain current (TA=70°C) | ID | -1.6 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID, pulse | -8 | A | TA=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | -10.7 | mJ | ID=-2 A, RGS=25 Ω | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.5 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=-2 A, VDS=-16V; di/dt=-200A/µs, Tj,max=150 °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Thermal resistance, junction - ambient (minimal footprint) | RthJA | 250 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction - ambient (40mm² FR4 PCB) | RthJA | 62 | K/W | Performed on 40mm² FR4 PCB (footnote 1) | 2 |
CAD (KiCad official)
- Symbol:
BSS308PE - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss308pe-etched.step/bss308pe-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss308pe.step/bss308pe.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
7ba470bbb0d70162, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSS308PE
**UMW** · MOSFETs · SOT-23
BSS308PE from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet states the device operates with gate voltages as low as 2.5V and the gate-source voltage is rated at ±20V. |
| 2 | S | passive | SOURCE terminal of the P-channel MOSFET, part of the device rated at VDS = -30V. |
| 3 | D | passive | DRAIN terminal of the P-channel MOSFET; the datasheet rates continuous drain current ID at -2 A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -30 | | | V | VGS=0V, ID=-250µA | 2 |
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-11µA | 2 |
| Drain-source leakage current | IDSS | | | -1 | μA | VDS=-30V,VGS=0V,TJ=25°C | 2 |
| Gate-source leakage current | IGSS | | | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Drain-source on-state resistance | RDS(on) | | | 90 | mΩ | VGS=-4.5V, ID=-1.7A | 2 |
| Drain-source on-state resistance | RDS(on) | | | 70 | mΩ | VGS=-10V, ID=-2A | 2 |
| Input capacitance | Ciss | | 376 | 500 | pF | VDS=0V, VGS=-15V, f=1MHz | 3 |
| Output capacitance | Coss | | 196 | 261 | pF | VDS=0V, VGS=-15V, f=1MHz | 3 |
| Reverse transfer capacitance | Crss | | 12 | 18 | pF | VDS=0V, VGS=-15V, f=1MHz | 3 |
| Diode forward voltage | VSD | | | -1.1 | V | VGS=0V, IF=-2V, TJ=25°C | 3 |
| Drain current (TA=25°C) | ID | | | -2 | A | TA=25 °C | 1 |
| Drain current (TA=70°C) | ID | | | -1.6 | A | TA=70 °C | 1 |
| Pulsed drain current | ID, pulse | | | -8 | A | TA=25 °C | 1 |
| Avalanche energy, single pulse | EAS | | | -10.7 | mJ | ID=-2 A, RGS=25 Ω | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Power dissipation | Ptot | | | 0.5 | W | TA=25 °C | 1 |
| Operating and storage temperature | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | ID=-2 A, VDS=-16V; di/dt=-200A/µs, Tj,max=150 °C | 1 |
| Soldering temperature | | | | 260 | °C | | 1 |
| Thermal resistance, junction - ambient (minimal footprint) | RthJA | | | 250 | K/W | minimal footprint | 2 |
| Thermal resistance, junction - ambient (40mm² FR4 PCB) | RthJA | | 62 | | K/W | Performed on 40mm² FR4 PCB (footnote 1) | 2 |
## CAD (KiCad official)
- Symbol: `BSS308PE`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss308pe-etched.step` / `bss308pe-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss308pe.step` / `bss308pe.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](docs/bss308pe-datasheet.pdf) (10 pp, sha256 `7ba470bbb0d70162`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bss308pe-datasheet.pdf)