# BSS169H6906XTSA1

**Infineon Technologies** · MOSFETs · SOT-23

BSS169H6906XTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the N-channel depletion-mode MOSFET; absolute maximum gate-source voltage is ±20 V. |
| 2 | S | passive | Source pin of the N-channel depletion-mode MOSFET; continuous drain current is 0.17 A at TA=25 °C. |
| 3 | D | passive | Drain pin of the N-channel depletion-mode MOSFET; drain-source voltage rating is 100 V and pulsed drain current is 0.68 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 |  |  | V | VGS=-10 V, ID=250 µA | 2 |
| Gate threshold voltage | VGS(th) | -2.9 | -2.2 | -1.8 | V | VDS=3 V, ID=50 µA | 2 |
| Threshold voltage, band J | VGS(th) | -2 |  | -1.8 | V | VDS=3 V, ID=50 µA | 2 |
| Threshold voltage, band K | VGS(th) | -2.15 |  | -1.95 | V |  | 2 |
| Threshold voltage, band L | VGS(th) | -2.3 |  | -2.1 | V |  | 2 |
| Threshold voltage, band M | VGS(th) | -2.45 |  | -2.25 | V |  | 2 |
| Threshold voltage, band N | VGS(th) | -2.6 |  | -2.4 | V |  | 2 |
| Drain-source cutoff current at Tj=25 °C | ID(off) |  |  | 0.1 | µA | VDS=100 V, VGS=-10 V, Tj=25 °C | 2 |
| Drain-source cutoff current at Tj=125 °C | ID(off) |  |  | 10 | µA | VDS=100 V, VGS=-10 V, Tj=125 °C | 2 |
| Gate-source leakage current | IGSS |  |  | 10 | nA | VGS=20 V, VDS=0 V | 2 |
| On-state drain current | IDSS | 90 |  |  | mA | VGS=0 V, VDS=10 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 5.3 | 12 | Ω | VGS=0 V, ID=0.05 A | 2 |
| Drain-source on-state resistance | RDS(on) |  | 2.9 | 6 | Ω | VGS=10 V, ID=0.17 A | 2 |
| Transconductance | gfs | 0.1 | 0.19 |  | S | /VDS/>2/ID/RDS(on)max, ID=0.14 A | 2 |
| Input capacitance | Ciss |  | 51 | 68 | pF | VGS=-10 V, VDS=25 V, f=1 MHz | 3 |
| Output capacitance | Coss |  | 9 | 13 | pF | VGS=-10 V, VDS=25 V, f=1 MHz | 3 |
| Turn-on delay time | td(on) |  | 2.9 | 4.2 | ns | VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω | 3 |
| Rise time | tr |  | 2.7 | 4 | ns | VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω | 3 |
| Turn-off delay time | td(off) |  | 11 | 17 | ns | VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω | 3 |
| Fall time | tf |  | 27 | 40 | ns | VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω | 3 |
| Gate to source charge | Qgs |  | 0.12 | 0.16 | nC | VDD=80 V, ID=0.12 A, VGS=-3 to 7 V | 3 |
| Gate to drain charge | Qgd |  | 0.9 | 1.4 | nC | VDD=80 V, ID=0.12 A, VGS=-3 to 7 V | 3 |
| Gate charge total | Qg |  | 2.1 | 2.8 | nC | VDD=80 V, ID=0.12 A, VGS=-3 to 7 V | 3 |
| Diode continuous forward current | IS |  |  | 0.17 | A |  | 3 |
| Diode pulse current | IS,pulse |  |  | 0.68 | A |  | 3 |
| Diode forward voltage | VSD |  | 0.79 | 1.2 | V | VGS=-10 V, IF=0.17 A, Tj=25 °C | 3 |
| Reverse recovery time | trr |  | 20.5 | 25.6 | ns | VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C | 3 |
| Reverse recovery charge | Qrr |  | 9.7 | 12.1 | nC | VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C | 3 |
| Thermal resistance, junction - ambient | RthJA |  |  | 350 | K/W | minimal footprint | 2 |
| Continuous drain current at TA=25 °C | ID |  |  | 0.17 | A | TA=25 °C | 1 |
| Continuous drain current at TA=70 °C | ID |  |  | 0.14 | A | TA=70 °C | 1 |
| Pulsed drain current | ID,pulse |  |  | 0.68 | A | TA=25 °C | 1 |
| Reverse diode dv/dt | dv/dt |  |  | 6 | kV/µs | ID=0.17 A, VDS=80 V, di/dt=200 A/µs, Tj,max=150 °C | 1 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Power dissipation | Ptot |  |  | 0.36 | W | TA=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `BSS169H6906XTSA1`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss169h6906xtsa1-etched.step` / `bss169h6906xtsa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss169h6906xtsa1.step` / `bss169h6906xtsa1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590317580050739200) (9 pp, sha256 `701ab4a06b0c85e1`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss169h6906xtsa1-datasheet.pdf)