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BSS169H6906XTSA1

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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS169H6906XTSA1

Infineon Technologies · MOSFETs · SOT-23

BSS169H6906XTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin of the N-channel depletion-mode MOSFET; absolute maximum gate-source voltage is ±20 V.
2 S passive Source pin of the N-channel depletion-mode MOSFET; continuous drain current is 0.17 A at TA=25 °C.
3 D passive Drain pin of the N-channel depletion-mode MOSFET; drain-source voltage rating is 100 V and pulsed drain current is 0.68 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 100 V VGS=-10 V, ID=250 µA 2
Gate threshold voltage VGS(th) -2.9 -2.2 -1.8 V VDS=3 V, ID=50 µA 2
Threshold voltage, band J VGS(th) -2 -1.8 V VDS=3 V, ID=50 µA 2
Threshold voltage, band K VGS(th) -2.15 -1.95 V 2
Threshold voltage, band L VGS(th) -2.3 -2.1 V 2
Threshold voltage, band M VGS(th) -2.45 -2.25 V 2
Threshold voltage, band N VGS(th) -2.6 -2.4 V 2
Drain-source cutoff current at Tj=25 °C ID(off) 0.1 µA VDS=100 V, VGS=-10 V, Tj=25 °C 2
Drain-source cutoff current at Tj=125 °C ID(off) 10 µA VDS=100 V, VGS=-10 V, Tj=125 °C 2
Gate-source leakage current IGSS 10 nA VGS=20 V, VDS=0 V 2
On-state drain current IDSS 90 mA VGS=0 V, VDS=10 V 2
Drain-source on-state resistance RDS(on) 5.3 12 Ω VGS=0 V, ID=0.05 A 2
Drain-source on-state resistance RDS(on) 2.9 6 Ω VGS=10 V, ID=0.17 A 2
Transconductance gfs 0.1 0.19 S /VDS/>2/ID/RDS(on)max, ID=0.14 A 2
Input capacitance Ciss 51 68 pF VGS=-10 V, VDS=25 V, f=1 MHz 3
Output capacitance Coss 9 13 pF VGS=-10 V, VDS=25 V, f=1 MHz 3
Turn-on delay time td(on) 2.9 4.2 ns VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω 3
Rise time tr 2.7 4 ns VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω 3
Turn-off delay time td(off) 11 17 ns VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω 3
Fall time tf 27 40 ns VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω 3
Gate to source charge Qgs 0.12 0.16 nC VDD=80 V, ID=0.12 A, VGS=-3 to 7 V 3
Gate to drain charge Qgd 0.9 1.4 nC VDD=80 V, ID=0.12 A, VGS=-3 to 7 V 3
Gate charge total Qg 2.1 2.8 nC VDD=80 V, ID=0.12 A, VGS=-3 to 7 V 3
Diode continuous forward current IS 0.17 A 3
Diode pulse current IS,pulse 0.68 A 3
Diode forward voltage VSD 0.79 1.2 V VGS=-10 V, IF=0.17 A, Tj=25 °C 3
Reverse recovery time trr 20.5 25.6 ns VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C 3
Reverse recovery charge Qrr 9.7 12.1 nC VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C 3
Thermal resistance, junction - ambient RthJA 350 K/W minimal footprint 2
Continuous drain current at TA=25 °C ID 0.17 A TA=25 °C 1
Continuous drain current at TA=70 °C ID 0.14 A TA=70 °C 1
Pulsed drain current ID,pulse 0.68 A TA=25 °C 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=0.17 A, VDS=80 V, di/dt=200 A/µs, Tj,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 0.36 W TA=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BSS169H6906XTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss169h6906xtsa1-etched.step / bss169h6906xtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss169h6906xtsa1.step / bss169h6906xtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 701ab4a06b0c85e1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF