# BSS138_R1_00001

**PANJIT International** · MOSFETs · SOT-23

BSS138_R1_00001 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; VGS is limited to ±20 V maximum with a gate threshold of 0.8 V min to 1.5 V max at VDS=VGS, ID=250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous diode forward current is 300 mA max and pulsed 2000 mA max. |
| 3 | D | passive | Drain of the N-channel MOSFET; VDS is 50 V max, continuous drain current 300 mA and pulsed drain current 2000 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 50 | V |  | 1 |
| Gate-Source Voltage | VGS |  |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 300 | mA |  | 1 |
| Pulsed Drain Current | IDM |  |  | 2000 | mA |  | 1 |
| Maximum Power Dissipation | PD |  |  | 350 | mW | TA=25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 210 | mW | TA=75°C | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 357 | °C/W | PCB mounted | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 50 |  |  | V | VGS=0V, ID=10μA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.8 |  | 1.5 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 2.8 | 6 | Ω | VGS=2.5V, ID=100mA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 1.8 | 4 | Ω | VGS=4.5V, ID=200mA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 1.6 | 3 | Ω | VGS=10V, ID=500mA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=50V, VGS=0V | 2 |
| Gate Body Leakage | IGSS |  |  | 10 | μA | VGS=+20V, VDS=0V | 2 |
| Forward Transconductance | gfS | 100 |  |  | mS | VDS=10V, ID=250mA | 2 |
| Total Gate Charge | Qg |  |  | 1 | nC | VDS=25V, ID=250mA, VGS=4.5V | 2 |
| Turn-On Time | ton |  |  | 40 | ns | VDD=30V, RL=100Ω, ID=300mA, VGEN=10V, RG=6Ω | 2 |
| Turn-Off Time | toff |  |  | 150 | ns | VDD=30V, RL=100Ω, ID=300mA, VGEN=10V, RG=6Ω | 2 |
| Input Capacitance | Ciss |  |  | 50 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss |  |  | 10 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  |  | 5 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Diode Forward Voltage | VSD |  | 0.82 | 1.2 | V | IS=250mA, VGS=0V | 2 |
| Continuous Diode Forward Current | IS |  |  | 300 | mA |  | 2 |
| Pulse Diode Forward Current | ISM |  |  | 2000 | mA |  | 2 |

## CAD (KiCad official)

- Symbol: `BSS138_R1_00001`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss138-r1-00001-etched.step` / `bss138-r1-00001-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss138-r1-00001.step` / `bss138-r1-00001.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PANJIT International datasheet](docs/bss138-r1-00001-datasheet.pdf) (7 pp, sha256 `517430cb2bb987fa`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss138-r1-00001-datasheet.pdf)