component
BSS138_R1_00001
Public Made by Adomby adom
PANJIT International MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
BSS138_R1_00001
PANJIT International · MOSFETs · SOT-23
BSS138_R1_00001 from PANJIT International, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; VGS is limited to ±20 V maximum with a gate threshold of 0.8 V min to 1.5 V max at VDS=VGS, ID=250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous diode forward current is 300 mA max and pulsed 2000 mA max. |
| 3 | D | passive | Drain of the N-channel MOSFET; VDS is 50 V max, continuous drain current 300 mA and pulsed drain current 2000 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 50 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Continuous Drain Current | ID | 300 | mA | 1 | |||
| Pulsed Drain Current | IDM | 2000 | mA | 1 | |||
| Maximum Power Dissipation | PD | 350 | mW | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 210 | mW | TA=75°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 357 | °C/W | PCB mounted | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 50 | V | VGS=0V, ID=10μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.5 | V | VDS=VGS, ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 2.8 | 6 | Ω | VGS=2.5V, ID=100mA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 1.8 | 4 | Ω | VGS=4.5V, ID=200mA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 1.6 | 3 | Ω | VGS=10V, ID=500mA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=50V, VGS=0V | 2 | ||
| Gate Body Leakage | IGSS | 10 | μA | VGS=+20V, VDS=0V | 2 | ||
| Forward Transconductance | gfS | 100 | mS | VDS=10V, ID=250mA | 2 | ||
| Total Gate Charge | Qg | 1 | nC | VDS=25V, ID=250mA, VGS=4.5V | 2 | ||
| Turn-On Time | ton | 40 | ns | VDD=30V, RL=100Ω, ID=300mA, VGEN=10V, RG=6Ω | 2 | ||
| Turn-Off Time | toff | 150 | ns | VDD=30V, RL=100Ω, ID=300mA, VGEN=10V, RG=6Ω | 2 | ||
| Input Capacitance | Ciss | 50 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 10 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Diode Forward Voltage | VSD | 0.82 | 1.2 | V | IS=250mA, VGS=0V | 2 | |
| Continuous Diode Forward Current | IS | 300 | mA | 2 | |||
| Pulse Diode Forward Current | ISM | 2000 | mA | 2 |
CAD (KiCad official)
- Symbol:
BSS138_R1_00001 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss138-r1-00001-etched.step/bss138-r1-00001-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss138-r1-00001.step/bss138-r1-00001.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (7 pp, sha256
517430cb2bb987fa, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).