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BSS119NH6327XTSA1
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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSS119NH6327XTSA1
Infineon Technologies · MOSFETs · SOT-23
BSS119NH6327XTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal (pin 1 in the symbol on page 1), with a maximum gate-source voltage of ±20 V and logic-level drive rated at 4.5 V. |
| 2 | Source | passive | Source terminal (pin 2 in the symbol on page 1) of the N-channel MOSFET, with continuous drain current of 0.19 A at TA=25 °C. |
| 3 | Drain | passive | Drain terminal (pin 3 in the symbol on page 1) of the N-channel MOSFET, with a drain-source voltage rating of 100 V and pulsed drain current of 0.77 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current, TA=25 °C | ID | 0.19 | A | TA=25 °C | 1 | ||
| Continuous drain current, TA=70 °C | ID | 0.15 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | 0.77 | A | TA=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 2 | mJ | ID=0.19 A, RGS=25 W | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=0.19 A, VDS=80 V, di/dt=200 A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Thermal resistance, junction - ambient | R thJA | 250 | K/W | minimal footprint 1) | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.3 | 1.9 | 2.3 | V | VDS=VGS V, ID=13 µA | 2 |
| Drain-source leakage current, Tj=25 °C | IDSS | 0.01 | mA | VDS=100 V, VGS=0 V, Tj=25 °C | 2 | ||
| Drain-source leakage current, Tj=150 °C | IDSS | 5 | mA | VDS=100 V, VGS=0 V, Tj=150 °C | 2 | ||
| Gate-source leakage current | IGSS | 10 | nA | VGS=20 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance, VGS=4.5 V | RDS(on) | 2915 | 10000 | mW | VGS=4.5 V, ID=0.15 A | 2 | |
| Drain-source on-state resistance, VGS=10 V | RDS(on) | 2406 | 6000 | mW | VGS=10 V, ID=0.19 A | 2 | |
| Transconductance | gfs | 0.35 | S | /VDS/>2/ID/RDS(on)max, ID=0.15 A | 2 | ||
| Input capacitance | Ciss | 15.7 | 20.9 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 3.4 | 4.5 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 2.1 | 3.1 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Diode continuous forward current | IS | 0.19 | A | 3 | |||
| Diode pulse current | IS,pulse | 0.77 | A | 3 | |||
| Diode forward voltage | VSD | 0.8 | 1.1 | V | VGS=0 V, IF=0.19 A, Tj=25 °C | 3 |
CAD (KiCad official)
- Symbol:
BSS119NH6327XTSA1 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss119nh6327xtsa1-etched.step/bss119nh6327xtsa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss119nh6327xtsa1.step/bss119nh6327xtsa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
b14ccd9eba21968d, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSS119NH6327XTSA1
**Infineon Technologies** · MOSFETs · SOT-23
BSS119NH6327XTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal (pin 1 in the symbol on page 1), with a maximum gate-source voltage of ±20 V and logic-level drive rated at 4.5 V. |
| 2 | Source | passive | Source terminal (pin 2 in the symbol on page 1) of the N-channel MOSFET, with continuous drain current of 0.19 A at TA=25 °C. |
| 3 | Drain | passive | Drain terminal (pin 3 in the symbol on page 1) of the N-channel MOSFET, with a drain-source voltage rating of 100 V and pulsed drain current of 0.77 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current, TA=25 °C | ID | | | 0.19 | A | TA=25 °C | 1 |
| Continuous drain current, TA=70 °C | ID | | | 0.15 | A | TA=70 °C | 1 |
| Pulsed drain current | ID,pulse | | | 0.77 | A | TA=25 °C | 1 |
| Avalanche energy, single pulse | EAS | | | 2 | mJ | ID=0.19 A, RGS=25 W | 1 |
| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | ID=0.19 A, VDS=80 V, di/dt=200 A/µs, Tj,max=150 °C | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Soldering temperature | | | | 260 | °C | | 1 |
| Thermal resistance, junction - ambient | R thJA | | | 250 | K/W | minimal footprint 1) | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | VGS=0 V, ID=250 µA | 2 |
| Gate threshold voltage | VGS(th) | 1.3 | 1.9 | 2.3 | V | VDS=VGS V, ID=13 µA | 2 |
| Drain-source leakage current, Tj=25 °C | IDSS | | | 0.01 | mA | VDS=100 V, VGS=0 V, Tj=25 °C | 2 |
| Drain-source leakage current, Tj=150 °C | IDSS | | | 5 | mA | VDS=100 V, VGS=0 V, Tj=150 °C | 2 |
| Gate-source leakage current | IGSS | | | 10 | nA | VGS=20 V, VDS=0 V | 2 |
| Drain-source on-state resistance, VGS=4.5 V | RDS(on) | | 2915 | 10000 | mW | VGS=4.5 V, ID=0.15 A | 2 |
| Drain-source on-state resistance, VGS=10 V | RDS(on) | | 2406 | 6000 | mW | VGS=10 V, ID=0.19 A | 2 |
| Transconductance | gfs | 0.35 | | | S | /VDS/>2/ID/RDS(on)max, ID=0.15 A | 2 |
| Input capacitance | Ciss | | 15.7 | 20.9 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Output capacitance | Coss | | 3.4 | 4.5 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Reverse transfer capacitance | Crss | | 2.1 | 3.1 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Diode continuous forward current | IS | | | 0.19 | A | | 3 |
| Diode pulse current | IS,pulse | | | 0.77 | A | | 3 |
| Diode forward voltage | VSD | | 0.8 | 1.1 | V | VGS=0 V, IF=0.19 A, Tj=25 °C | 3 |
## CAD (KiCad official)
- Symbol: `BSS119NH6327XTSA1`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss119nh6327xtsa1-etched.step` / `bss119nh6327xtsa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss119nh6327xtsa1.step` / `bss119nh6327xtsa1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/bss119nh6327xtsa1-datasheet.pdf) (9 pp, sha256 `b14ccd9eba21968d`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bss119nh6327xtsa1-datasheet.pdf)