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Contents

README

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BSS119NH6327XTSA1

Infineon Technologies · MOSFETs · SOT-23

BSS119NH6327XTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal (pin 1 in the symbol on page 1), with a maximum gate-source voltage of ±20 V and logic-level drive rated at 4.5 V.
2 Source passive Source terminal (pin 2 in the symbol on page 1) of the N-channel MOSFET, with continuous drain current of 0.19 A at TA=25 °C.
3 Drain passive Drain terminal (pin 3 in the symbol on page 1) of the N-channel MOSFET, with a drain-source voltage rating of 100 V and pulsed drain current of 0.77 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current, TA=25 °C ID 0.19 A TA=25 °C 1
Continuous drain current, TA=70 °C ID 0.15 A TA=70 °C 1
Pulsed drain current ID,pulse 0.77 A TA=25 °C 1
Avalanche energy, single pulse EAS 2 mJ ID=0.19 A, RGS=25 W 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=0.19 A, VDS=80 V, di/dt=200 A/µs, Tj,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Soldering temperature 260 °C 1
Thermal resistance, junction - ambient R thJA 250 K/W minimal footprint 1) 2
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0 V, ID=250 µA 2
Gate threshold voltage VGS(th) 1.3 1.9 2.3 V VDS=VGS V, ID=13 µA 2
Drain-source leakage current, Tj=25 °C IDSS 0.01 mA VDS=100 V, VGS=0 V, Tj=25 °C 2
Drain-source leakage current, Tj=150 °C IDSS 5 mA VDS=100 V, VGS=0 V, Tj=150 °C 2
Gate-source leakage current IGSS 10 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance, VGS=4.5 V RDS(on) 2915 10000 mW VGS=4.5 V, ID=0.15 A 2
Drain-source on-state resistance, VGS=10 V RDS(on) 2406 6000 mW VGS=10 V, ID=0.19 A 2
Transconductance gfs 0.35 S /VDS/>2/ID/RDS(on)max, ID=0.15 A 2
Input capacitance Ciss 15.7 20.9 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Output capacitance Coss 3.4 4.5 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Reverse transfer capacitance Crss 2.1 3.1 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Diode continuous forward current IS 0.19 A 3
Diode pulse current IS,pulse 0.77 A 3
Diode forward voltage VSD 0.8 1.1 V VGS=0 V, IF=0.19 A, Tj=25 °C 3

CAD (KiCad official)

  • Symbol: BSS119NH6327XTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss119nh6327xtsa1-etched.step / bss119nh6327xtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss119nh6327xtsa1.step / bss119nh6327xtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 b14ccd9eba21968d, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF