component
BSP315P
Public Made by Adomby adom
UMW MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSP315P
UMW · MOSFETs · SOT-223
BSP315P from UMW, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE: gate-source voltage is rated ±20 V (VGS absolute maximum), and the device is an enhancement-mode, logic-level type with VGS(th) of -1 V to -2 V at VDS = VGS, ID = -160 µA. |
| 2 | D | passive | DRAIN: continuous drain current is -1.17 A at TA = 25 °C (-0.94 A at TA = 70 °C) for a -60 V P-channel device, with pulsed drain current -4.68 A. |
| 3 | S | passive | SOURCE: the body reverse diode has a continuous forward current IS of -1.17 A and a pulsed current of -4.68 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | VGS=0V, ID=-250μA | 3 | ||
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-160μA | 3 |
| Zero gate voltage drain current (TJ=25°C) | IDSS | -0.1 | -1 | µA | VDS=-60V, VGS=0V, TJ=25°C | 3 | |
| Zero gate voltage drain current (TJ=125°C) | IDSS | -10 | -100 | µA | VDS=-60V, VGS=0V, TJ=125°C | 3 | |
| Gate-source leakage current | IGSS | -10 | -100 | nA | VGS=-20V, VDS=0V | 3 | |
| Drain-source on-state resistance (VGS=-4.5V) | RDS(ON) | 0.8 | 1.4 | Ω | VGS=-4.5V, ID=-0.89A | 3 | |
| Drain-source on-state resistance (VGS=-10V) | RDS(ON) | 0.5 | 0.8 | Ω | VGS=-10V, ID=-1.17A | 3 | |
| Transconductance | gFS | 0.7 | 1.4 | S | VDS≤2IDRDS(ON)max, ID=-0.89A | 3 | |
| Input capacitance | Ciss | 130 | 160 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Output capacitance | Coss | 40 | 50 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 17 | 21 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Turn-on delay time | tD(on) | 9 | 14 | ns | VDD=-30V, VGS=-4.5V; ID=-0.89A, RG=18Ω | 3 | |
| Rise time | tr | 24 | 36 | ns | VDD=-30V, VGS=-4.5V; ID=-0.89A, RG=18Ω | 3 | |
| Turn-off delay time | tD(off) | 32 | 48 | ns | VDD=-30V, VGS=-4.5V; ID=-0.89A, RG=18Ω | 3 | |
| Fall time | tf | 19 | 28 | ns | VDD=-30V, VGS=-4.5V; ID=-0.89A, RG=18Ω | 3 | |
| Gate to source charge | Qgs | 0.7 | 1.1 | nC | VDD=-48V, ID=-1.17A, VGS=0 to -10V | 3 | |
| Gate to drain charge | Qgd | 1.8 | 2.6 | nC | VDD=-48V, ID=-1.17A, VGS=0 to -10V | 3 | |
| Gate charge total | Qg | 5.2 | 7.8 | nC | VDD=-48V, ID=-1.17A, VGS=0 to -10V | 3 | |
| Inverse diode continuous forward current | IS | -0.97 | -1.17 | A | TA=25°C | 4 | |
| Inverse diode direct current, pulsed | IS,pulse | -4.68 | A | TA=25°C | 4 | ||
| Inverse diode forward voltage | VSD | -1.3 | V | VGS=0 V, IF=-1.17A | 4 | ||
| Reverse recovery time | trr | 30.5 | 46 | ns | VR=-30V, IF=IS, diF/dt=100A/µs | 4 | |
| Reverse recovery charge | Qrr | 36 | 54 | µC | VR=-30V, IF=IS, diF/dt=100A/µs | 4 | |
| Continuous drain current (TA=25°C) | ID | -1.17 | A | TA=25°C | 1 | ||
| Continuous drain current (TA=70°C) | ID | -0.94 | A | TA=70°C | 1 | ||
| Pulsed drain current | ID,pulse | -4.68 | A | TA=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 24 | mJ | ID=-1.17A, VDD=-25V, RGS=25Ω | 1 | ||
| Avalanche energy, periodic limited by Tjmax | EAR | 0.18 | mJ | 1 | |||
| Reverse diode dv/dt | dv/dt | -6 | kV/µs | IS=-1.17A, VDS=-48V, di/dt=200A/µs, Tjmax=150°C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 1.8 | W | 1 | |||
| Operating and storage temperature | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction - soldering point (Pin 4) | RthJS | 25 | K/W | Junction - soldering point (Pin 4) | 2 | ||
| Thermal resistance, junction - ambient (SMD, min. footprint) | RthJA | 115 | K/W | SMD version, device on PCB: @ min. footprint | 2 | ||
| Thermal resistance, junction - ambient (SMD, 6 cm2 cooling area) | RthJA | 70 | K/W | SMD version, device on PCB: @ 6 cm2 cooling area | 2 |
CAD (KiCad official)
- Symbol:
BSP315P - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
bsp315p-etched.step/bsp315p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsp315p.step/bsp315p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
68d149e9bdf2fc43, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).