component
BSL606SNH6327XTSA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TSOP-6-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSL606SNH6327XTSA1
Infineon Technologies · MOSFETs · TSOP-6-6
BSL606SNH6327XTSA1 from Infineon Technologies, in a TSOP-6-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, connected internally with pins 2, 5 and 6; VDS 60 V max, ID 4.5 A continuous at TA=25 °C. |
| 2 | D | passive | Drain, connected internally with pins 1, 5 and 6; VDS 60 V max, ID 4.5 A continuous at TA=25 °C. |
| 3 | G | input | Gate, logic level (4.5 V rated) with VGS maximum ±20 V and threshold 1.3 to 2.3 V. |
| 4 | S | passive | Source of the N-channel MOSFET, with the body diode continuous forward current IS up to 0.9 A. |
| 5 | D | passive | Drain, connected internally with pins 1, 2 and 6; pulsed drain current up to 18.1 A at TA=25 °C. |
| 6 | D | passive | Drain, connected internally with pins 1, 2 and 5; pulsed drain current up to 18.1 A at TA=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TSOP-6-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | V GS=0 V, I D=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | V DS=0 V, I D=15 µA | 2 |
| Drain-source leakage current (Tj=25 °C) | IDSS | 1 | mA | V DS=60 V, V GS=0 V, T j=25 °C | 2 | ||
| Drain-source leakage current (Tj=150 °C) | IDSS | 100 | mA | V DS=60 V, V GS=0 V, T j=150 °C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | V GS=20 V, V DS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 69 | 95 | mW | V GS=4.5 V, I D=3.6 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 49 | 60 | mW | V GS=10 V, I D=4.5 A | 2 | |
| Transconductance | gfs | 7.1 | S | /V DS/>2/I D/R DS(on)max, I D=3.6 A | 2 | ||
| Input capacitance | Ciss | 494 | 657 | pF | V GS=0 V, V DS=25 V, f =1 MHz | 3 | |
| Output capacitance | Coss | 131 | 174 | pF | V GS=0 V, V DS=25 V, f =1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 10.2 | 15.3 | pF | V GS=0 V, V DS=25 V, f =1 MHz | 3 | |
| Gate to source charge | Qgs | 1.7 | 2.2 | nC | V DD=48 V, I D=4.5 A, V GS=0 to 5 V | 3 | |
| Gate to drain charge | Qgd | 1 | 1.5 | nC | V DD=48 V, I D=4.5 A, V GS=0 to 5 V | 3 | |
| Gate charge total | Qg | 3.7 | 5.6 | nC | V DD=48 V, I D=4.5 A, V GS=0 to 5 V | 3 | |
| Diode continuous forward current | IS | 0.9 | A | 3 | |||
| Diode pulse current | IS,pulse | 18.1 | A | 3 | |||
| Diode forward voltage | VSD | 0.9 | 1.1 | V | V GS=0 V, I F=4.5 A, T j=25 °C | 3 | |
| Continuous drain current (TA=25 °C) | ID | 4.5 | A | T A=25 °C | 1 | ||
| Continuous drain current (TA=70 °C) | ID | 3.6 | A | T A=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | 18.1 | A | T A=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 14 | mJ | I D=4.5 A, R GS=25 W | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | I D=4.5 A, V DS=16 V, di/dt =200 A/µs, T j,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 2 | W | T A=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Thermal resistance, junction to ambient (SMD, 6 cm2 cooling area) | RthJA | 62.5 | SMD version, device on PCB, @6cm2 cooling area | 2 |
CAD (KiCad official)
- Symbol:
BSL606SNH6327XTSA1 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6-6 (KiCad packages3D, STEP)
- 3D model files:
bsl606snh6327xtsa1-etched.step/bsl606snh6327xtsa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsl606snh6327xtsa1.step/bsl606snh6327xtsa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
ed33e1af562a18d6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSL606SNH6327XTSA1
**Infineon Technologies** · MOSFETs · TSOP-6-6
BSL606SNH6327XTSA1 from Infineon Technologies, in a TSOP-6-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, connected internally with pins 2, 5 and 6; VDS 60 V max, ID 4.5 A continuous at TA=25 °C. |
| 2 | D | passive | Drain, connected internally with pins 1, 5 and 6; VDS 60 V max, ID 4.5 A continuous at TA=25 °C. |
| 3 | G | input | Gate, logic level (4.5 V rated) with VGS maximum ±20 V and threshold 1.3 to 2.3 V. |
| 4 | S | passive | Source of the N-channel MOSFET, with the body diode continuous forward current IS up to 0.9 A. |
| 5 | D | passive | Drain, connected internally with pins 1, 2 and 6; pulsed drain current up to 18.1 A at TA=25 °C. |
| 6 | D | passive | Drain, connected internally with pins 1, 2 and 5; pulsed drain current up to 18.1 A at TA=25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TSOP-6-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | V GS=0 V, I D=250 µA | 2 |
| Gate threshold voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | V DS=0 V, I D=15 µA | 2 |
| Drain-source leakage current (Tj=25 °C) | IDSS | | | 1 | mA | V DS=60 V, V GS=0 V, T j=25 °C | 2 |
| Drain-source leakage current (Tj=150 °C) | IDSS | | | 100 | mA | V DS=60 V, V GS=0 V, T j=150 °C | 2 |
| Gate-source leakage current | IGSS | | | 100 | nA | V GS=20 V, V DS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) | | 69 | 95 | mW | V GS=4.5 V, I D=3.6 A | 2 |
| Drain-source on-state resistance | RDS(on) | | 49 | 60 | mW | V GS=10 V, I D=4.5 A | 2 |
| Transconductance | gfs | 7.1 | | | S | /V DS/>2/I D/R DS(on)max, I D=3.6 A | 2 |
| Input capacitance | Ciss | | 494 | 657 | pF | V GS=0 V, V DS=25 V, f =1 MHz | 3 |
| Output capacitance | Coss | | 131 | 174 | pF | V GS=0 V, V DS=25 V, f =1 MHz | 3 |
| Reverse transfer capacitance | Crss | | 10.2 | 15.3 | pF | V GS=0 V, V DS=25 V, f =1 MHz | 3 |
| Gate to source charge | Qgs | | 1.7 | 2.2 | nC | V DD=48 V, I D=4.5 A, V GS=0 to 5 V | 3 |
| Gate to drain charge | Qgd | | 1 | 1.5 | nC | V DD=48 V, I D=4.5 A, V GS=0 to 5 V | 3 |
| Gate charge total | Qg | | 3.7 | 5.6 | nC | V DD=48 V, I D=4.5 A, V GS=0 to 5 V | 3 |
| Diode continuous forward current | IS | | | 0.9 | A | | 3 |
| Diode pulse current | IS,pulse | | | 18.1 | A | | 3 |
| Diode forward voltage | VSD | | 0.9 | 1.1 | V | V GS=0 V, I F=4.5 A, T j=25 °C | 3 |
| Continuous drain current (TA=25 °C) | ID | | | 4.5 | A | T A=25 °C | 1 |
| Continuous drain current (TA=70 °C) | ID | | | 3.6 | A | T A=70 °C | 1 |
| Pulsed drain current | ID,pulse | | | 18.1 | A | T A=25 °C | 1 |
| Avalanche energy, single pulse | EAS | | | 14 | mJ | I D=4.5 A, R GS=25 W | 1 |
| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | I D=4.5 A, V DS=16 V, di/dt =200 A/µs, T j,max=150 °C | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Power dissipation | Ptot | | | 2 | W | T A=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Soldering temperature | | | | 260 | °C | | 1 |
| Thermal resistance, junction to ambient (SMD, 6 cm2 cooling area) | RthJA | | | 62.5 | | SMD version, device on PCB, @6cm2 cooling area | 2 |
## CAD (KiCad official)
- Symbol: `BSL606SNH6327XTSA1`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6-6 (KiCad packages3D, STEP)
- 3D model files: `bsl606snh6327xtsa1-etched.step` / `bsl606snh6327xtsa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsl606snh6327xtsa1.step` / `bsl606snh6327xtsa1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589834749037473792) (9 pp, sha256 `ed33e1af562a18d6`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsl606snh6327xtsa1-datasheet.pdf)