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BSL606SNH6327XTSA1

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Infineon Technologies MOSFETs, TSOP-6-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSL606SNH6327XTSA1

Infineon Technologies · MOSFETs · TSOP-6-6

BSL606SNH6327XTSA1 from Infineon Technologies, in a TSOP-6-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, connected internally with pins 2, 5 and 6; VDS 60 V max, ID 4.5 A continuous at TA=25 °C.
2 D passive Drain, connected internally with pins 1, 5 and 6; VDS 60 V max, ID 4.5 A continuous at TA=25 °C.
3 G input Gate, logic level (4.5 V rated) with VGS maximum ±20 V and threshold 1.3 to 2.3 V.
4 S passive Source of the N-channel MOSFET, with the body diode continuous forward current IS up to 0.9 A.
5 D passive Drain, connected internally with pins 1, 2 and 6; pulsed drain current up to 18.1 A at TA=25 °C.
6 D passive Drain, connected internally with pins 1, 2 and 5; pulsed drain current up to 18.1 A at TA=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TSOP-6-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 60 V V GS=0 V, I D=250 µA 2
Gate threshold voltage VGS(th) 1.3 1.8 2.3 V V DS=0 V, I D=15 µA 2
Drain-source leakage current (Tj=25 °C) IDSS 1 mA V DS=60 V, V GS=0 V, T j=25 °C 2
Drain-source leakage current (Tj=150 °C) IDSS 100 mA V DS=60 V, V GS=0 V, T j=150 °C 2
Gate-source leakage current IGSS 100 nA V GS=20 V, V DS=0 V 2
Drain-source on-state resistance RDS(on) 69 95 mW V GS=4.5 V, I D=3.6 A 2
Drain-source on-state resistance RDS(on) 49 60 mW V GS=10 V, I D=4.5 A 2
Transconductance gfs 7.1 S /V DS/>2/I D/R DS(on)max, I D=3.6 A 2
Input capacitance Ciss 494 657 pF V GS=0 V, V DS=25 V, f =1 MHz 3
Output capacitance Coss 131 174 pF V GS=0 V, V DS=25 V, f =1 MHz 3
Reverse transfer capacitance Crss 10.2 15.3 pF V GS=0 V, V DS=25 V, f =1 MHz 3
Gate to source charge Qgs 1.7 2.2 nC V DD=48 V, I D=4.5 A, V GS=0 to 5 V 3
Gate to drain charge Qgd 1 1.5 nC V DD=48 V, I D=4.5 A, V GS=0 to 5 V 3
Gate charge total Qg 3.7 5.6 nC V DD=48 V, I D=4.5 A, V GS=0 to 5 V 3
Diode continuous forward current IS 0.9 A 3
Diode pulse current IS,pulse 18.1 A 3
Diode forward voltage VSD 0.9 1.1 V V GS=0 V, I F=4.5 A, T j=25 °C 3
Continuous drain current (TA=25 °C) ID 4.5 A T A=25 °C 1
Continuous drain current (TA=70 °C) ID 3.6 A T A=70 °C 1
Pulsed drain current ID,pulse 18.1 A T A=25 °C 1
Avalanche energy, single pulse EAS 14 mJ I D=4.5 A, R GS=25 W 1
Reverse diode dv/dt dv/dt 6 kV/µs I D=4.5 A, V DS=16 V, di/dt =200 A/µs, T j,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 2 W T A=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Soldering temperature 260 °C 1
Thermal resistance, junction to ambient (SMD, 6 cm2 cooling area) RthJA 62.5 SMD version, device on PCB, @6cm2 cooling area 2

CAD (KiCad official)

  • Symbol: BSL606SNH6327XTSA1
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6-6 (KiCad packages3D, STEP)
  • 3D model files: bsl606snh6327xtsa1-etched.step / bsl606snh6327xtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsl606snh6327xtsa1.step / bsl606snh6327xtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 ed33e1af562a18d6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF