component
BSH111BKR
Public Made by Adomby adom
Nexperia MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bsh111bkr: specified limits as data (metadata.characteristics, 32 rows from the datasheet)
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16d ago
BSH111BKR
Nexperia · MOSFETs · SOT-23
BSH111BKR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the gate-source voltage is limited to -10 V to 10 V (Table 5). |
| 2 | S | passive | Source terminal of the MOSFET; the source current is limited to 200 mA at Tamb = 25 °C (Table 5). |
| 3 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is limited to 55 V and the drain current to 210 mA at Tamb = 25 °C with VGS = 4.5 V (Table 5). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 55 | V | 3 | |||
| Gate-source voltage | VGS | -10 | 10 | V | Tj = 25 °C | 3 | |
| Drain current | ID | 210 | mA | VGS = 4.5 V; Tamb = 25 °C [1] | 3 | ||
| Drain current | ID | 130 | mA | VGS = 4.5 V; Tamb = 100 °C [1] | 3 | ||
| Drain current | ID | 335 | mA | VGS = 4.5 V; Tsp = 25 °C | 3 | ||
| Peak drain current | IDM | 0.85 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 | ||
| Total power dissipation | Ptot | 302 | mW | Tamb = 25 °C [2] | 3 | ||
| Total power dissipation | Ptot | 364 | mW | Tamb = 25 °C [1] | 3 | ||
| Total power dissipation | Ptot | 1449 | mW | Tsp = 25 °C | 3 | ||
| Junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Source current | IS | 200 | mA | Tamb = 25 °C [1] | 3 | ||
| Thermal resistance junction to ambient | Rth(j-a) | 351 | 404 | K/W | in free air; standard footprint [1] | 4 | |
| Thermal resistance junction to ambient | Rth(j-a) | 271 | 311 | K/W | in free air; mounting pad for drain 1 cm2 [2] | 4 | |
| Thermal resistance junction to solder point | Rth(j-sp) | 65 | 75 | K/W | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 55 | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 | ||
| Gate-source threshold voltage | VGSth | 0.6 | 1 | 1.3 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | 1 | µA | VDS = 55 V; VGS = 0 V; Tj = 25 °C | 6 | ||
| Drain leakage current | IDSS | 5 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain leakage current | IDSS | -5 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | 0.3 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Gate leakage current | IGSS | -0.3 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 | ||
| Drain-source on-state resistance | RDSon | 2.3 | 4 | Ω | VGS = 4.5 V; ID = 200 mA; Tj = 25 °C | 6 | |
| Drain-source on-state resistance | RDSon | 4.7 | 8.1 | Ω | VGS = 4.5 V; ID = 200 mA; Tj = 150 °C | 6 | |
| Drain-source on-state resistance | RDSon | 2.7 | 5 | Ω | VGS = 2.5 V; ID = 75 mA; Tj = 25 °C | 6 | |
| Input capacitance | Ciss | 19.1 | 30 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | |
| Output capacitance | Coss | 2.7 | 10 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | |
| Reverse transfer capacitance | Crss | 1.5 | 7 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 | |
| Turn-on delay time | td(on) | 8.3 | 12 | ns | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | |
| Turn-off delay time | td(off) | 12.6 | 16 | ns | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 | |
| Source-drain voltage | VSD | 0.86 | 1.2 | V | IS = 200 mA; VGS = 0 V; Tj = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
BSH111BKR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bsh111bkr-etched.step/bsh111bkr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsh111bkr.step/bsh111bkr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (16 pp, sha256
1f64e6fe63df5e0d, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSH111BKR
**Nexperia** · MOSFETs · SOT-23
BSH111BKR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the gate-source voltage is limited to -10 V to 10 V (Table 5). |
| 2 | S | passive | Source terminal of the MOSFET; the source current is limited to 200 mA at Tamb = 25 °C (Table 5). |
| 3 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is limited to 55 V and the drain current to 210 mA at Tamb = 25 °C with VGS = 4.5 V (Table 5). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 55 | V | | 3 |
| Gate-source voltage | VGS | -10 | | 10 | V | Tj = 25 °C | 3 |
| Drain current | ID | | | 210 | mA | VGS = 4.5 V; Tamb = 25 °C [1] | 3 |
| Drain current | ID | | | 130 | mA | VGS = 4.5 V; Tamb = 100 °C [1] | 3 |
| Drain current | ID | | | 335 | mA | VGS = 4.5 V; Tsp = 25 °C | 3 |
| Peak drain current | IDM | | | 0.85 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| Total power dissipation | Ptot | | | 302 | mW | Tamb = 25 °C [2] | 3 |
| Total power dissipation | Ptot | | | 364 | mW | Tamb = 25 °C [1] | 3 |
| Total power dissipation | Ptot | | | 1449 | mW | Tsp = 25 °C | 3 |
| Junction temperature | Tj | -55 | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Source current | IS | | | 200 | mA | Tamb = 25 °C [1] | 3 |
| Thermal resistance junction to ambient | Rth(j-a) | | 351 | 404 | K/W | in free air; standard footprint [1] | 4 |
| Thermal resistance junction to ambient | Rth(j-a) | | 271 | 311 | K/W | in free air; mounting pad for drain 1 cm2 [2] | 4 |
| Thermal resistance junction to solder point | Rth(j-sp) | | 65 | 75 | K/W | | 4 |
| Drain-source breakdown voltage | V(BR)DSS | 55 | | | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| Gate-source threshold voltage | VGSth | 0.6 | 1 | 1.3 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | 1 | µA | VDS = 55 V; VGS = 0 V; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | 5 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain leakage current | IDSS | | | -5 | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | 0.3 | µA | VGS = 4.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Gate leakage current | IGSS | | | -0.3 | µA | VGS = -4.5 V; VDS = 0 V; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 2.3 | 4 | Ω | VGS = 4.5 V; ID = 200 mA; Tj = 25 °C | 6 |
| Drain-source on-state resistance | RDSon | | 4.7 | 8.1 | Ω | VGS = 4.5 V; ID = 200 mA; Tj = 150 °C | 6 |
| Drain-source on-state resistance | RDSon | | 2.7 | 5 | Ω | VGS = 2.5 V; ID = 75 mA; Tj = 25 °C | 6 |
| Input capacitance | Ciss | | 19.1 | 30 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Output capacitance | Coss | | 2.7 | 10 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Reverse transfer capacitance | Crss | | 1.5 | 7 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| Turn-on delay time | td(on) | | 8.3 | 12 | ns | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Turn-off delay time | td(off) | | 12.6 | 16 | ns | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| Source-drain voltage | VSD | | 0.86 | 1.2 | V | IS = 200 mA; VGS = 0 V; Tj = 25 °C | 6 |
## CAD (KiCad official)
- Symbol: `BSH111BKR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bsh111bkr-etched.step` / `bsh111bkr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsh111bkr.step` / `bsh111bkr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885376203571200) (16 pp, sha256 `1f64e6fe63df5e0d`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsh111bkr-datasheet.pdf)