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BSH111BKR

Nexperia · MOSFETs · SOT-23

BSH111BKR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET; the gate-source voltage is limited to -10 V to 10 V (Table 5).
2 S passive Source terminal of the MOSFET; the source current is limited to 200 mA at Tamb = 25 °C (Table 5).
3 D passive Drain terminal of the MOSFET; the drain-source voltage is limited to 55 V and the drain current to 210 mA at Tamb = 25 °C with VGS = 4.5 V (Table 5).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 55 V 3
Gate-source voltage VGS -10 10 V Tj = 25 °C 3
Drain current ID 210 mA VGS = 4.5 V; Tamb = 25 °C [1] 3
Drain current ID 130 mA VGS = 4.5 V; Tamb = 100 °C [1] 3
Drain current ID 335 mA VGS = 4.5 V; Tsp = 25 °C 3
Peak drain current IDM 0.85 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 302 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 364 mW Tamb = 25 °C [1] 3
Total power dissipation Ptot 1449 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS 200 mA Tamb = 25 °C [1] 3
Thermal resistance junction to ambient Rth(j-a) 351 404 K/W in free air; standard footprint [1] 4
Thermal resistance junction to ambient Rth(j-a) 271 311 K/W in free air; mounting pad for drain 1 cm2 [2] 4
Thermal resistance junction to solder point Rth(j-sp) 65 75 K/W 4
Drain-source breakdown voltage V(BR)DSS 55 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 0.6 1 1.3 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 55 V; VGS = 0 V; Tj = 25 °C 6
Drain leakage current IDSS 5 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C 6
Drain leakage current IDSS -5 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 0.3 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -0.3 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 2.3 4 Ω VGS = 4.5 V; ID = 200 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 4.7 8.1 Ω VGS = 4.5 V; ID = 200 mA; Tj = 150 °C 6
Drain-source on-state resistance RDSon 2.7 5 Ω VGS = 2.5 V; ID = 75 mA; Tj = 25 °C 6
Input capacitance Ciss 19.1 30 pF VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Output capacitance Coss 2.7 10 pF VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Reverse transfer capacitance Crss 1.5 7 pF VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Turn-on delay time td(on) 8.3 12 ns VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6
Turn-off delay time td(off) 12.6 16 ns VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C 6
Source-drain voltage VSD 0.86 1.2 V IS = 200 mA; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: BSH111BKR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bsh111bkr-etched.step / bsh111bkr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsh111bkr.step / bsh111bkr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 1f64e6fe63df5e0d, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF