component

BSH111BKR-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSH111BKR-HXY

HXY MOSFET · MOSFETs · SOT-23

BSH111BKR-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; ±20 V maximum gate-source voltage, threshold 0.7 V min to 1.9 V max at 250 µA, with ESD rating HBM ≥2000 V.
2 S passive Source of the N-channel MOSFET; continuous drain current 0.3 A at TA=25 °C and body diode forward current 0.3 A.
3 D passive Drain; 60 V maximum drain-source voltage, 0.3 A continuous and 0.8 A pulsed drain current.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 0.3 A TJ=150℃, TA=25℃ 1
Continuous Drain Current ID 0.19 A TJ=150℃, TA=100℃ 1
Drain Current-Pulsed IDM 0.8 A Note 1 1
Maximum Power Dissipation PD 0.35 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 350 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 60 68 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Gate-Body Leakage Current IGSS 500 nA VGS=±10V, VDS=0V 2
Gate-Body Leakage Current IGSS 10 uA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.7 1.2 1.9 V VDS=VGS, ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 1.3 3 Ω VGS=5V, ID=0.1A 2
Drain-Source On-State Resistance RDS(ON) 1 2 Ω VGS=10V, ID=0.1A 2
Forward Transconductance gFS 0.1 S VDS=10V, ID=0.2A 2
Input Capacitance Clss 21 50 PF VDS=25V, VGS=0V, F=1.0MHz 2
Output Capacitance Coss 11 25 PF VDS=25V, VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 4.2 5 PF VDS=25V, VGS=0V, F=1.0MHz 2
Total Gate Charge Qg 1.7 3 nC VDS=10V, ID=0.3A, VGS=4.5V 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=0.2A 2
Diode Forward Current IS 0.3 A 2

CAD (KiCad official)

  • Symbol: BSH111BKR-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bsh111bkr-hxy-etched.step / bsh111bkr-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsh111bkr-hxy.step / bsh111bkr-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 433c16ea0e038c73, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF