component
BSH111BKR-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSH111BKR-HXY
HXY MOSFET · MOSFETs · SOT-23
BSH111BKR-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; ±20 V maximum gate-source voltage, threshold 0.7 V min to 1.9 V max at 250 µA, with ESD rating HBM ≥2000 V. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous drain current 0.3 A at TA=25 °C and body diode forward current 0.3 A. |
| 3 | D | passive | Drain; 60 V maximum drain-source voltage, 0.3 A continuous and 0.8 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 0.3 | A | TJ=150℃, TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 0.19 | A | TJ=150℃, TA=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 0.8 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 0.35 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 350 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | 68 | V | VGS=0V, ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 500 | nA | VGS=±10V, VDS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 10 | uA | VGS=±20V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.7 | 1.2 | 1.9 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 1.3 | 3 | Ω | VGS=5V, ID=0.1A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 1 | 2 | Ω | VGS=10V, ID=0.1A | 2 | |
| Forward Transconductance | gFS | 0.1 | S | VDS=10V, ID=0.2A | 2 | ||
| Input Capacitance | Clss | 21 | 50 | PF | VDS=25V, VGS=0V, F=1.0MHz | 2 | |
| Output Capacitance | Coss | 11 | 25 | PF | VDS=25V, VGS=0V, F=1.0MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 4.2 | 5 | PF | VDS=25V, VGS=0V, F=1.0MHz | 2 | |
| Total Gate Charge | Qg | 1.7 | 3 | nC | VDS=10V, ID=0.3A, VGS=4.5V | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=0.2A | 2 | ||
| Diode Forward Current | IS | 0.3 | A | 2 |
CAD (KiCad official)
- Symbol:
BSH111BKR-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bsh111bkr-hxy-etched.step/bsh111bkr-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsh111bkr-hxy.step/bsh111bkr-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
433c16ea0e038c73, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).