# BSDH10G120E2

**BOURNS** · SiC Diodes · TO-220-2

BSDH10G120E2 from BOURNS, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Diode cathode, connected to the mounting base (mb) as shown in the pin information; the datasheet gives a maximum repetitive peak reverse voltage of 1200 V and an average forward current of 10 A (Tmb ≤ 146 °C, D = 0.5). |
| 2 | Anode | passive | Diode anode; the datasheet gives a maximum repetitive peak forward current of 20 A (Tmb ≤ 146 °C, tp = 25 µs, D = 0.5) and a non-repetitive peak forward surge current of 80 A (10 ms single sine-wave pulse). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | BOURNS |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM |  |  | 1200 | V |  | 1 |
| Average Forward Current | IF(AV) |  |  | 10 | A | Square Wave Pulse, D = 0.5, Tmb ≤146 °C, Fig. Zth(J-mb) | 1 |
| Repetitive Peak Forward Current | IFRM |  |  | 20 | A | Square Wave Pulse, D = 0.5, Tmb ≤146 °C, tp = 25 µs, Fig. Zth(J-mb) | 1 |
| Non-Repetitive Peak Forward Surge Current | IFSM |  |  | 80 | A | 10 ms, Single Sine-Wave Pulse | 1 |
| Total Power Dissipation | Ptot |  |  | 176.4 | W |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 175 | °C |  | 1 |
| Junction to Mounting Base Thermal Resistance | Rθ(J-mb) |  | 0.65 | 0.85 | °C/W | Transient thermal impedance curves | 1 |
| Junction to Ambient Thermal Resistance | Rθ(J-A) |  | 40 |  | °C/W | In ambient air | 1 |
| Forward Voltage | VF |  | 1.42 | 2 | V | IF = 10 A, TJ = 25 °C | 1 |
| Forward Voltage | VF |  | 1.6 | 2.5 | V | IF = 10 A, TJ = 175 °C | 1 |
| Reverse Leakage Current | IR |  | 1 | 25 | µA | VR = 1200 V, TJ = 25 °C | 1 |
| Reverse Leakage Current | IR |  | 50 | 500 | µA | VR = 1200 V, TJ = 175 °C | 1 |
| Recovered Charge | Qr |  | 22 |  | nC | dIF/dt = 500 A/µs, VR = 400 V, IF = 10 A | 1 |
| Diode Capacitance | Cd |  | 481 |  | pF | VR = 1 V, f = 1 MHz | 1 |
| Capacitance Stored Energy | Ec |  | 13 |  | µJ | VR = 800 V | 1 |

## CAD (KiCad official)

- Symbol: `BSDH10G120E2`
- Footprint: `Package_TO_SOT_THT:TO-220-2_Vertical`
- 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files: `bsdh10g120e2-etched.step` / `bsdh10g120e2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsdh10g120e2.step` / `bsdh10g120e2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [BOURNS datasheet](docs/bsdh10g120e2-datasheet.pdf) (6 pp, sha256 `ae1a8a6afea11e62`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bsdh10g120e2-datasheet.pdf)