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BSDH10G120E2
Public Made by Adomby adom
BOURNS SiC Diodes, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSDH10G120E2
BOURNS · SiC Diodes · TO-220-2
BSDH10G120E2 from BOURNS, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Diode cathode, connected to the mounting base (mb) as shown in the pin information; the datasheet gives a maximum repetitive peak reverse voltage of 1200 V and an average forward current of 10 A (Tmb ≤ 146 °C, D = 0.5). |
| 2 | Anode | passive | Diode anode; the datasheet gives a maximum repetitive peak forward current of 20 A (Tmb ≤ 146 °C, tp = 25 µs, D = 0.5) and a non-repetitive peak forward surge current of 80 A (10 ms single sine-wave pulse). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BOURNS |
| Package | TO-220-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | 1 | |||
| Average Forward Current | IF(AV) | 10 | A | Square Wave Pulse, D = 0.5, Tmb ≤146 °C, Fig. Zth(J-mb) | 1 | ||
| Repetitive Peak Forward Current | IFRM | 20 | A | Square Wave Pulse, D = 0.5, Tmb ≤146 °C, tp = 25 µs, Fig. Zth(J-mb) | 1 | ||
| Non-Repetitive Peak Forward Surge Current | IFSM | 80 | A | 10 ms, Single Sine-Wave Pulse | 1 | ||
| Total Power Dissipation | Ptot | 176.4 | W | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | °C | 1 | ||
| Storage Temperature | TSTG | -55 | 175 | °C | 1 | ||
| Junction to Mounting Base Thermal Resistance | Rθ(J-mb) | 0.65 | 0.85 | °C/W | Transient thermal impedance curves | 1 | |
| Junction to Ambient Thermal Resistance | Rθ(J-A) | 40 | °C/W | In ambient air | 1 | ||
| Forward Voltage | VF | 1.42 | 2 | V | IF = 10 A, TJ = 25 °C | 1 | |
| Forward Voltage | VF | 1.6 | 2.5 | V | IF = 10 A, TJ = 175 °C | 1 | |
| Reverse Leakage Current | IR | 1 | 25 | µA | VR = 1200 V, TJ = 25 °C | 1 | |
| Reverse Leakage Current | IR | 50 | 500 | µA | VR = 1200 V, TJ = 175 °C | 1 | |
| Recovered Charge | Qr | 22 | nC | dIF/dt = 500 A/µs, VR = 400 V, IF = 10 A | 1 | ||
| Diode Capacitance | Cd | 481 | pF | VR = 1 V, f = 1 MHz | 1 | ||
| Capacitance Stored Energy | Ec | 13 | µJ | VR = 800 V | 1 |
CAD (KiCad official)
- Symbol:
BSDH10G120E2 - Footprint:
Package_TO_SOT_THT:TO-220-2_Vertical - 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files:
bsdh10g120e2-etched.step/bsdh10g120e2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsdh10g120e2.step/bsdh10g120e2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BOURNS datasheet (6 pp, sha256
ae1a8a6afea11e62, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).