# BSD223PH6327

**Infineon Technologies** · MOSFETs · SOT-363

BSD223PH6327 from Infineon Technologies, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source (MOSFET1) | passive | Source terminal of the first P-channel MOSFET (MOSFET1, pins 1,2,6), part of the dual device rated VDS -20 V and ID -0.39 A. |
| 2 | Gate (MOSFET1) | input | Gate terminal of the first P-channel MOSFET (MOSFET1), with gate-source voltage limited to ±12 V (VGS). |
| 3 | Drain (MOSFET2) | passive | Drain terminal of the second P-channel MOSFET (MOSFET2, pins 3,4,5), part of the dual device rated VDS -20 V and ID -0.39 A. |
| 4 | Source (MOSFET2) | passive | Source terminal of the second P-channel MOSFET (MOSFET2, pins 3,4,5), part of the dual device rated VDS -20 V and ID -0.39 A. |
| 5 | Gate (MOSFET2) | input | Gate terminal of the second P-channel MOSFET (MOSFET2), with gate-source voltage limited to ±12 V (VGS). |
| 6 | Drain (MOSFET1) | passive | Drain terminal of the first P-channel MOSFET (MOSFET1, pins 1,2,6), part of the dual device rated VDS -20 V and ID -0.39 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current, TA=25°C | ID | -0.39 |  |  | A | TA=25°C | 1 |
| Continuous drain current, TA=70°C | ID | -0.31 |  |  | A | TA=70°C | 1 |
| Pulsed drain current | ID puls | -1.56 |  |  | A | TA=25°C | 1 |
| Avalanche energy, single pulse | EAS |  |  | 1.4 | mJ | ID=-0.39 A, VDD=-10V, RGS=25Ω | 1 |
| Reverse diode dv/dt | dv/dt | -6 |  |  | kV/µs | IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C | 1 |
| Gate source voltage | VGS | -12 |  | 12 | V |  | 1 |
| Power dissipation | Ptot |  |  | 0.25 | W | TA=25°C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction - soldering point | RthJS |  |  | 180 | K/W |  | 2 |
| Thermal resistance, junction - ambient, leaded | RthJA |  |  | 500 | K/W |  | 2 |
| Drain-source breakdown voltage | V(BR)DSS | -20 |  |  | V | VGS=0, ID=-250µA | 2 |
| Gate threshold voltage | VGS(th) | -0.6 | -0.9 | -1.2 | V | ID=-1.5µA, VGS=VDS | 2 |
| Zero gate voltage drain current, Tj=25°C | IDSS |  | -0.1 | -1 | µA | VDS=-20V, VGS=0, Tj=25°C | 2 |
| Zero gate voltage drain current, Tj=150°C | IDSS |  | -10 | -100 | µA | VDS=-20V, VGS=0, Tj=150°C | 2 |
| Gate-source leakage current | IGSS |  | -10 | -100 | nA | VGS=-12V, VDS=0 | 2 |
| Drain-source on-state resistance, VGS=-2.5V | RDS(on) |  | 1.27 | 2.1 | Ω | VGS=-2.5V, ID=-0.29A | 2 |
| Drain-source on-state resistance, VGS=-4.5V | RDS(on) |  | 0.7 | 1.2 | Ω | VGS=-4.5, ID=-0.39A | 2 |
| Transconductance | gfs | 0.35 | 0.7 |  | S | VDS≥2*ID*RDS(on)max, ID=-0.31A | 3 |
| Input capacitance | Ciss |  | 45 | 56 | pF | VGS=0, VDS=-15V, f=1MHz | 3 |
| Output capacitance | Coss |  | 21 | 26 | pF |  | 3 |
| Reverse transfer capacitance | Crss |  | 17 | 22 | pF |  | 3 |
| Turn-on delay time | td(on) |  | 3.8 | 5.7 | ns | VDD=-10V, VGS=-4.5V, ID=-0.39A, RG=6Ω | 3 |
| Rise time | tr |  | 5 | 7.5 | ns |  | 3 |
| Turn-off delay time | td(off) |  | 5.1 | 7.6 | ns |  | 3 |
| Fall time | tf |  | 3.2 | 4.8 | ns |  | 3 |
| Gate to source charge | Qgs |  | -0.04 | -0.05 | nC | VDD=-10V, ID=-0.39A | 3 |
| Gate to drain charge | Qgd |  | -0.4 | -0.5 | nC |  | 3 |
| Gate charge total | Qg |  | -0.5 | -0.62 | nC | VDD=-10V, ID=-0.39A, VGS=0 to -4.5V | 3 |
| Gate plateau voltage | V(plateau) |  | -2.2 | -2.7 | V | VDD=-10V, ID=-0.39A | 3 |
| Inverse diode continuous forward current | IS |  |  | -0.39 | A | TA=25°C | 3 |
| Inverse diode direct current, pulsed | ISM |  |  | -1.56 | A |  | 3 |
| Inverse diode forward voltage | VSD |  | -1 | -1.33 | V | VGS=0, IF=-0.39 | 3 |
| Reverse recovery time | trr |  | 7.6 | 9.5 | ns | VR=-10V, /IF/=/ID/, diF/dt=100A/µs | 3 |
| Reverse recovery charge | Qrr |  | 1.1 | 1.4 | nC |  | 3 |

## CAD (KiCad official)

- Symbol: `BSD223PH6327`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `bsd223ph6327-etched.step` / `bsd223ph6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsd223ph6327.step` / `bsd223ph6327.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590223658842431488) (9 pp, sha256 `7bdd565c3daebf9d`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bsd223ph6327-datasheet.pdf)