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BSD223PH6327

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Infineon Technologies MOSFETs, SOT-363. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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BSD223PH6327

Infineon Technologies · MOSFETs · SOT-363

BSD223PH6327 from Infineon Technologies, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source (MOSFET1) passive Source terminal of the first P-channel MOSFET (MOSFET1, pins 1,2,6), part of the dual device rated VDS -20 V and ID -0.39 A.
2 Gate (MOSFET1) input Gate terminal of the first P-channel MOSFET (MOSFET1), with gate-source voltage limited to ±12 V (VGS).
3 Drain (MOSFET2) passive Drain terminal of the second P-channel MOSFET (MOSFET2, pins 3,4,5), part of the dual device rated VDS -20 V and ID -0.39 A.
4 Source (MOSFET2) passive Source terminal of the second P-channel MOSFET (MOSFET2, pins 3,4,5), part of the dual device rated VDS -20 V and ID -0.39 A.
5 Gate (MOSFET2) input Gate terminal of the second P-channel MOSFET (MOSFET2), with gate-source voltage limited to ±12 V (VGS).
6 Drain (MOSFET1) passive Drain terminal of the first P-channel MOSFET (MOSFET1, pins 1,2,6), part of the dual device rated VDS -20 V and ID -0.39 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current, TA=25°C ID -0.39 A TA=25°C 1
Continuous drain current, TA=70°C ID -0.31 A TA=70°C 1
Pulsed drain current ID puls -1.56 A TA=25°C 1
Avalanche energy, single pulse EAS 1.4 mJ ID=-0.39 A, VDD=-10V, RGS=25Ω 1
Reverse diode dv/dt dv/dt -6 kV/µs IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C 1
Gate source voltage VGS -12 12 V 1
Power dissipation Ptot 0.25 W TA=25°C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction - soldering point RthJS 180 K/W 2
Thermal resistance, junction - ambient, leaded RthJA 500 K/W 2
Drain-source breakdown voltage V(BR)DSS -20 V VGS=0, ID=-250µA 2
Gate threshold voltage VGS(th) -0.6 -0.9 -1.2 V ID=-1.5µA, VGS=VDS 2
Zero gate voltage drain current, Tj=25°C IDSS -0.1 -1 µA VDS=-20V, VGS=0, Tj=25°C 2
Zero gate voltage drain current, Tj=150°C IDSS -10 -100 µA VDS=-20V, VGS=0, Tj=150°C 2
Gate-source leakage current IGSS -10 -100 nA VGS=-12V, VDS=0 2
Drain-source on-state resistance, VGS=-2.5V RDS(on) 1.27 2.1 Ω VGS=-2.5V, ID=-0.29A 2
Drain-source on-state resistance, VGS=-4.5V RDS(on) 0.7 1.2 Ω VGS=-4.5, ID=-0.39A 2
Transconductance gfs 0.35 0.7 S VDS≥2IDRDS(on)max, ID=-0.31A 3
Input capacitance Ciss 45 56 pF VGS=0, VDS=-15V, f=1MHz 3
Output capacitance Coss 21 26 pF 3
Reverse transfer capacitance Crss 17 22 pF 3
Turn-on delay time td(on) 3.8 5.7 ns VDD=-10V, VGS=-4.5V, ID=-0.39A, RG=6Ω 3
Rise time tr 5 7.5 ns 3
Turn-off delay time td(off) 5.1 7.6 ns 3
Fall time tf 3.2 4.8 ns 3
Gate to source charge Qgs -0.04 -0.05 nC VDD=-10V, ID=-0.39A 3
Gate to drain charge Qgd -0.4 -0.5 nC 3
Gate charge total Qg -0.5 -0.62 nC VDD=-10V, ID=-0.39A, VGS=0 to -4.5V 3
Gate plateau voltage V(plateau) -2.2 -2.7 V VDD=-10V, ID=-0.39A 3
Inverse diode continuous forward current IS -0.39 A TA=25°C 3
Inverse diode direct current, pulsed ISM -1.56 A 3
Inverse diode forward voltage VSD -1 -1.33 V VGS=0, IF=-0.39 3
Reverse recovery time trr 7.6 9.5 ns VR=-10V, /IF/=/ID/, diF/dt=100A/µs 3
Reverse recovery charge Qrr 1.1 1.4 nC 3

CAD (KiCad official)

  • Symbol: BSD223PH6327
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bsd223ph6327-etched.step / bsd223ph6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsd223ph6327.step / bsd223ph6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 7bdd565c3daebf9d, retrieved 2026-10-20, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF