component
BSC057N08NS3G-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSC057N08NS3G-HXY
HXY MOSFET · MOSFETs · DFN-8(5x6)
BSC057N08NS3G-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no electrical limit for this pin individually. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no electrical limit for this pin individually. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no electrical limit for this pin individually. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS). |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS). |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS). |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS). |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 85 | V | TC=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ unless otherwise noted | 1 | |
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | 100 | A | TC=25℃; VGS @ 10V | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | 63.3 | A | TC=100℃; VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | TC=25℃ unless otherwise noted | 1 | ||
| Single Pulse Avalanche Energy | EAS | 273.8 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 107.8 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.16 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient | RθJA | 60 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 85 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-body Leakage current | lGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | TJ=25°C; VDS = 85V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | TJ=100°C; VDS = 85V, VGS = 0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source on-Resistance | RDS(on) | 4.3 | 5.6 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS = 20A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 100 | A | TC=25°C | 2 |
CAD (KiCad official)
- Symbol:
BSC057N08NS3G-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
bsc057n08ns3g-hxy-etched.step/bsc057n08ns3g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc057n08ns3g-hxy.step/bsc057n08ns3g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
cfc714104625f037, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSC057N08NS3G-HXY
**HXY MOSFET** · MOSFETs · DFN-8(5x6)
BSC057N08NS3G-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no electrical limit for this pin individually. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no electrical limit for this pin individually. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no electrical limit for this pin individually. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS). |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS). |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS). |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS). |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 85 | V | TC=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ unless otherwise noted | 1 |
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | | | 100 | A | TC=25℃; VGS @ 10V | 1 |
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | | | 63.3 | A | TC=100℃; VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 400 | A | TC=25℃ unless otherwise noted | 1 |
| Single Pulse Avalanche Energy | EAS | | | 273.8 | mJ | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 107.8 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 1.16 | ℃/W | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 60 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 85 | | | V | VGS = 0V, ID = 250µA | 2 |
| Gate-body Leakage current | lGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | TJ=25°C; VDS = 85V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | μA | TJ=100°C; VDS = 85V, VGS = 0V | 2 |
| Gate-Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source on-Resistance | RDS(on) | | 4.3 | 5.6 | mΩ | VGS = 10V, ID = 20A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | IS = 20A, VGS = 0V | 2 |
| Continuous Source Current | IS | | | 100 | A | TC=25°C | 2 |
## CAD (KiCad official)
- Symbol: `BSC057N08NS3G-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `bsc057n08ns3g-hxy-etched.step` / `bsc057n08ns3g-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc057n08ns3g-hxy.step` / `bsc057n08ns3g-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758123268245610496) (7 pp, sha256 `cfc714104625f037`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsc057n08ns3g-hxy-datasheet.pdf)