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BSC057N08NS3G-HXY

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HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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BSC057N08NS3G-HXY

HXY MOSFET · MOSFETs · DFN-8(5x6)

BSC057N08NS3G-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet gives no electrical limit for this pin individually.
2 S passive Source terminal of the N-channel MOSFET; the datasheet gives no electrical limit for this pin individually.
3 S passive Source terminal of the N-channel MOSFET; the datasheet gives no electrical limit for this pin individually.
4 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS).
5 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS).
6 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS).
7 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS).
8 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 85 V (VDS).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 85 V TC=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TC=25℃ unless otherwise noted 1
Continuous Drain Current, VGS @ 10V ID@TC=25℃ 100 A TC=25℃; VGS @ 10V 1
Continuous Drain Current, VGS @ 10V ID@TC=100℃ 63.3 A TC=100℃; VGS @ 10V 1
Pulsed Drain Current IDM 400 A TC=25℃ unless otherwise noted 1
Single Pulse Avalanche Energy EAS 273.8 mJ 1
Total Power Dissipation PD@TC=25℃ 107.8 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Case RθJC 1.16 ℃/W 1
Thermal Resistance Junction-Ambient RθJA 60 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 85 V VGS = 0V, ID = 250µA 2
Gate-body Leakage current lGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA TJ=25°C; VDS = 85V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 100 μA TJ=100°C; VDS = 85V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250µA 2
Drain-Source on-Resistance RDS(on) 4.3 5.6 mΩ VGS = 10V, ID = 20A 2
Diode Forward Voltage VSD 1.2 V IS = 20A, VGS = 0V 2
Continuous Source Current IS 100 A TC=25°C 2

CAD (KiCad official)

  • Symbol: BSC057N08NS3G-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: bsc057n08ns3g-hxy-etched.step / bsc057n08ns3g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc057n08ns3g-hxy.step / bsc057n08ns3g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 cfc714104625f037, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF