BSC030N08NS5ATMA1-VB

{
  "schema_version": 1,
  "type": "component",
  "slug": "bsc030n08ns5atma1-vb",
  "title": "BSC030N08NS5ATMA1-VB",
  "brief": "VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
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    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "BSC030N08NS5ATMA1-VB",
    "manufacturer": "VBsemi Elec",
    "package": "DFN5x6-8",
    "pin_count": 9,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603349189933871104",
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      "footprint": "bsc030n08ns5atma1-vb.kicad_mod",
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    "distributor_links": {
      "lcsc": "C22395982"
    },
    "distributor_check": {
      "checked_at": "2026-10-21T00:23:36Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
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      "mouser": {
        "pn": null,
        "status": "no match"
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    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; pins 1-3 are tied to source."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; pins 1-3 are tied to source."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; pins 1-3 are tied to source."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal with a maximum gate-source voltage of ±20 V."
      },
      {
        "number": "5",
        "name": "D",
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      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, rated for 85 V drain-source breakdown; pins 5-8 are tied to drain."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, rated for 85 V drain-source breakdown; pins 5-8 are tied to drain."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, rated for 85 V drain-source breakdown; pins 5-8 are tied to drain."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The bottom view in the datasheet appears to show an exposed pad, which is probably drain. Its pin nu",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 7,
        "cost_usd": 0.1151,
        "at": "2026-10-21T00:20:06"
      },
      "datasheet": {
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        "pages": 7,
        "sha256": "ea16b88dd7467b65",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "DFN5x6-8",
      "Category": "Transistors/Thyristors",
      "Pins": "9"
    },
    "characteristics": {
      "version": 1,
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          "name": "Gate-Source Voltage",
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          "max": 20,
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        {
          "name": "Continuous Drain Current (TJ = 175 °C), TC = 100 °C",
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        },
        {
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        {
          "name": "Continuous Source Current (Diode Conduction)",
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          "conditions": "Package limited (note a)",
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        },
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          "name": "Avalanche Current",
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          "conditions": "L = 0.1 mH; duty cycle ≤ 1 %",
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        },
        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
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          "conditions": "TC = 25 °C",
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        },
        {
          "name": "Operating Junction and Storage Temperature Range",
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          "typ": null,
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        },
        {
          "name": "Maximum Junction-to-Ambient (t ≤ 10 s)",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 15,
          "max": 18,
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          "source_page": 1,
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        },
        {
          "name": "Maximum Junction-to-Ambient (Steady State)",
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          "kind": "thermal",
          "unit": "°C/W",
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          "name": "Maximum Junction-to-Case",
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          "kind": "thermal",
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          "max": 1.1,
          "conditions": "",
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        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "VDS",
          "kind": "electrical",
          "unit": "V",
          "min": 85,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = 250 µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Body Leakage",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VDS = 0 V, VGS = ±20 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current (TJ = 125 °C)",
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          "kind": "electrical",
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          "name": "On-State Drain Current",
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          "min": 60,
          "typ": null,
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          "conditions": "VDS = 5 V, VGS = 10 V",
          "source_page": 2,
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        },
        {
          "name": "Drain-Source On-State Resistance",
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          "typ": null,
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          "conditions": "VGS = 10 V, ID = 20 A",
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        },
        {
          "name": "Drain-Source On-State Resistance (TJ = 125 °C)",
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          "min": null,
          "typ": null,
          "max": 0.008,
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          "source_page": 2,
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        {
          "name": "Drain-Source On-State Resistance (TJ = 175 °C)",
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        {
          "name": "Drain-Source On-State Resistance",
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          "typ": null,
          "max": 0.004,
          "conditions": "VGS = 4.5 V, ID = 46 A",
          "source_page": 2,
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        },
        {
          "name": "Pulsed Current",
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          "min": null,
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          "source_page": 2,
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        },
        {
          "name": "Reverse Recovery Time",
          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": null,
          "max": 135,
          "conditions": "IF = 20 A, di/dt = 100 A/µs",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
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    "name": "Ray",
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