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BSC030N08NS5ATMA1-VB

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VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSC030N08NS5ATMA1-VB

VBsemi Elec · MOSFETs · DFN5x6-8

BSC030N08NS5ATMA1-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; pins 1-3 are tied to source.
2 S passive Source terminal of the N-channel MOSFET; pins 1-3 are tied to source.
3 S passive Source terminal of the N-channel MOSFET; pins 1-3 are tied to source.
4 G input Gate terminal with a maximum gate-source voltage of ±20 V.
5 D passive Drain terminal, rated for 85 V drain-source breakdown; pins 5-8 are tied to drain.
6 D passive Drain terminal, rated for 85 V drain-source breakdown; pins 5-8 are tied to drain.
7 D passive Drain terminal, rated for 85 V drain-source breakdown; pins 5-8 are tied to drain.
8 D passive Drain terminal, rated for 85 V drain-source breakdown; pins 5-8 are tied to drain.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TJ = 175 °C), TC = 100 °C ID 85 A TJ = 175 °C; TC = 100 °C 1
Pulsed Drain Current IDM 420 A 1
Continuous Source Current (Diode Conduction) IS 80 A Package limited (note a) 1
Avalanche Current IAS 70 A 1
Single Avalanche Energy EAS 133 mJ L = 0.1 mH; duty cycle ≤ 1 % 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient (t ≤ 10 s) RthJA 15 18 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (Steady State) RthJA 40 50 °C/W Steady state 1
Maximum Junction-to-Case RthJC 0.85 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 85 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current (TJ = 125 °C) IDSS 50 µA VDS = 30 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current (TJ = 175 °C) IDSS 250 µA VDS = 30 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 60 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.003 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance (TJ = 125 °C) RDS(on) 0.008 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 2
Drain-Source On-State Resistance (TJ = 175 °C) RDS(on) 0.01 Ω VGS = 10 V, ID = 20 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.004 Ω VGS = 4.5 V, ID = 46 A 2
Pulsed Current ISM 420 A 2
Reverse Recovery Time trr 135 ns IF = 20 A, di/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: BSC030N08NS5ATMA1-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: bsc030n08ns5atma1-vb-etched.step / bsc030n08ns5atma1-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc030n08ns5atma1-vb.step / bsc030n08ns5atma1-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 ea16b88dd7467b65, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF