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bs270-hero.glb bs270: pin labels beside their pads (component-hero#2, hero_glb a625f4b) · Ray
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page.json Publish 0.1.1 · Ray
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verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray

BS270

onsemi · MOSFETs · TO-92

BS270 from onsemi, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the N-channel MOSFET, rated 60 V drain-source (VDSS) and 400 mA continuous (2000 mA pulsed) drain current.
2 G input Gate, rated ±20 V continuous (±40 V non-repetitive, tp < 50 µs) gate-source, with a 1 V to 2.5 V threshold at ID = 250 µA.
3 S passive Source of the N-channel MOSFET, which is the reference terminal for the VGS and VDS ratings.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Drain-Gate Voltage VDGR 60 V RGS ≤ 1 M 1
Gate-Source Voltage, continuous VGSS -20 20 V Continuous 1
Gate-Source Voltage, non-repetitive VGSS -40 40 V Non Repetitive (tp < 50 s) 1
Drain Current, continuous ID 400 mA Continuous 1
Drain Current, pulsed ID 2000 mA Pulsed 1
Maximum Power Dissipation PD 625 mW 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Lead Temperature for Soldering Purposes TL 300 °C 1/16” from Case for 10 Seconds 1
Thermal Resistance, Junction-to-Ambient RJA 200 °C/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0 V, ID = 10 A 2
Zero Gate Voltage Drain Current IDSS 1 A VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current at TJ = 125 °C IDSS 500 A VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Gate-Body Leakage, Forward IGSSF 10 nA VGS = 20 V, VDS = 0 V 2
Gate-Body Leakage, Reverse -10 nA VGS = −20 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 1 2.1 2.5 V VDS = VGS, ID = 250 A 2
Static Drain-Source On-Resistance RDS(ON) 1.2 2 Ω VGS = 10 V, ID = 500 mA 2
Static Drain-Source On-Resistance at TJ = 125 °C RDS(ON) 2 3.5 Ω VGS = 10 V, ID = 500 mA, TJ = 125 °C 2
Static Drain-Source On-Resistance RDS(ON) 1.8 3 Ω VGS = 4.5 V, ID = 75 mA 2
Drain-Source On-Voltage VDS(ON) 0.6 1 V VGS = 10 V, ID = 500 mA 2
Drain-Source On-Voltage VDS(ON) 0.14 0.225 V VGS = 4.5 V, ID = 75 mA 2
On-State Drain Current ID(ON) 2000 2700 mA VGS = 10 V, VDS ≥ 2 VDS(on) 2
On-State Drain Current ID(ON) 400 600 mA VGS = 4.5 V, VDS ≥ 2 VDS(on) 2
Forward Transconductance gFS 100 320 mS VDS ≥ 2 VDS(on), ID = 200 mA 2
Input Capacitance Ciss 20 50 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 11 25 pF 2
Reverse Transfer Capacitance Crss 4 5 pF 2
Turn-On Time ton 10 ns VDD = 30 V, ID = 500 mA, VGS = 10 V, RGEN = 25 2
Turn-Off Time toff 10 ns 2
Maximum Continuous Drain-Source Diode Forward Current IS 400 mA 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 2000 mA 2
Drain-Source Diode Forward Voltage VSD 0.88 1.2 V VGS = 0 V, IS = 400 mA (Note 1) 2

CAD (KiCad official)

  • Symbol: BS270
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: bs270-etched.step / bs270-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bs270.step / bs270.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 ef46d5f4e75646d7, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF