BS270 from onsemi, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	D	passive	Drain of the N-channel MOSFET, rated 60 V drain-source (VDSS) and 400 mA continuous (2000 mA pulsed) drain current.
2	G	input	Gate, rated ±20 V continuous (±40 V non-repetitive, tp < 50 µs) gate-source, with a 1 V to 2.5 V threshold at ID = 250 µA.
3	S	passive	Source of the N-channel MOSFET, which is the reference terminal for the VGS and VDS ratings.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	TO-92
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			60	V		1
Drain-Gate Voltage	VDGR			60	V	RGS ≤ 1 M	1
Gate-Source Voltage, continuous	VGSS	-20		20	V	Continuous	1
Gate-Source Voltage, non-repetitive	VGSS	-40		40	V	Non Repetitive (tp < 50 s)	1
Drain Current, continuous	ID			400	mA	Continuous	1
Drain Current, pulsed	ID			2000	mA	Pulsed	1
Maximum Power Dissipation	PD			625	mW		1
Operating and Storage Temperature Range	TJ, TSTG	-55		150	°C		1
Maximum Lead Temperature for Soldering Purposes	TL			300	°C	1/16” from Case for 10 Seconds	1
Thermal Resistance, Junction-to-Ambient	RJA			200	°C/W		1
Drain-Source Breakdown Voltage	BVDSS	60			V	VGS = 0 V, ID = 10 A	2
Zero Gate Voltage Drain Current	IDSS			1	A	VDS = 60 V, VGS = 0 V	2
Zero Gate Voltage Drain Current at TJ = 125 °C	IDSS			500	A	VDS = 60 V, VGS = 0 V, TJ = 125 °C	2
Gate-Body Leakage, Forward	IGSSF			10	nA	VGS = 20 V, VDS = 0 V	2
Gate-Body Leakage, Reverse				-10	nA	VGS = −20 V, VDS = 0 V	2
Gate Threshold Voltage	VGS(th)	1	2.1	2.5	V	VDS = VGS, ID = 250 A	2
Static Drain-Source On-Resistance	RDS(ON)		1.2	2	Ω	VGS = 10 V, ID = 500 mA	2
Static Drain-Source On-Resistance at TJ = 125 °C	RDS(ON)		2	3.5	Ω	VGS = 10 V, ID = 500 mA, TJ = 125 °C	2
Static Drain-Source On-Resistance	RDS(ON)		1.8	3	Ω	VGS = 4.5 V, ID = 75 mA	2
Drain-Source On-Voltage	VDS(ON)		0.6	1	V	VGS = 10 V, ID = 500 mA	2
Drain-Source On-Voltage	VDS(ON)		0.14	0.225	V	VGS = 4.5 V, ID = 75 mA	2
On-State Drain Current	ID(ON)	2000	2700		mA	VGS = 10 V, VDS ≥ 2 VDS(on)	2
On-State Drain Current	ID(ON)	400	600		mA	VGS = 4.5 V, VDS ≥ 2 VDS(on)	2
Forward Transconductance	gFS	100	320		mS	VDS ≥ 2 VDS(on), ID = 200 mA	2
Input Capacitance	Ciss		20	50	pF	VDS = 25 V, VGS = 0 V, f = 1.0 MHz	2
Output Capacitance	Coss		11	25	pF		2
Reverse Transfer Capacitance	Crss		4	5	pF		2
Turn-On Time	ton			10	ns	VDD = 30 V, ID = 500 mA, VGS = 10 V, RGEN = 25	2
Turn-Off Time	toff			10	ns		2
Maximum Continuous Drain-Source Diode Forward Current	IS			400	mA		2
Maximum Pulsed Drain-Source Diode Forward Current	ISM			2000	mA		2
Drain-Source Diode Forward Voltage	VSD		0.88	1.2	V	VGS = 0 V, IS = 400 mA (Note 1)	2

CAD (KiCad official)

Symbol: BS270
Footprint: Package_TO_SOT_THT:TO-92_Inline
3D model: TO-92 (KiCad packages3D, STEP)
3D model files: bs270-etched.step / bs270-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bs270.step / bs270.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (9 pp, sha256 ef46d5f4e75646d7, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

BS270

Verified BS270

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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