component
BRCS4407SC
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Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BRCS4407SC
Foshan Blue Rocket Elec · MOSFETs · SOP-8
BRCS4407SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (VDS = -30V, ID = -14A). |
| 2 | S | passive | Source of the P-channel MOSFET (VDS = -30V, ID = -14A). |
| 3 | S | passive | Source of the P-channel MOSFET (VDS = -30V, ID = -14A). |
| 4 | G | input | Gate of the P-channel MOSFET; absolute maximum VGSS is ±25V and RDS(ON) < 14mΩ at VGS = -10V. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | Ta=25℃ | 2 | ||
| Gate-Source Voltage | VGSS | -25 | 25 | V | Ta=25℃ | 2 | |
| Continuous Drain Current | ID | -14 | A | Ta=25°C | 2 | ||
| Pulsed Drain Current | IDM | -56 | A | Ta=25℃ | 2 | ||
| Power Dissipation for Single Operation | PD | 3.1 | W | Ta=25℃ | 2 | ||
| Maximum Junction Temperature | Tj | 150 | ℃ | Ta=25℃ | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | Ta=25℃ | 2 | |
| Thermal Resistance Junction to Ambient | RθJA | 40 | ℃/W | t≦10s | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 75 | ℃/W | Steady-State | 2 | ||
| Maximum Junction-to-Lead | RθJL | 24 | ℃/W | Steady-State | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250μA VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-24V VGS=0V | 3 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V VGS=±25V | 3 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS ID=-250μA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 14 | mΩ | VGS=-10V ID=-10A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14 | 24 | mΩ | VGS=-4.5V ID=-10A | 3 | |
| Diode Forward Voltage | VSD | -1 | V | IS=-1A VGS=0V | 3 | ||
| Total Gate Charge | Qg(10V) | 35 | nC | VGS=-10V VDS=-15V ID=-14A | 3 | ||
| Total Gate Charge | Qg(4.5V) | 17 | nC | VGS=-10V VDS=-15V ID=-14A | 3 | ||
| Gate-Source Charge | Qgs | 5.7 | nC | VGS=-10V VDS=-15V ID=-14A | 3 | ||
| Gate-Drain Charge | Qgd | 8.8 | nC | VGS=-10V VDS=-15V ID=-14A | 3 | ||
| Gate Resistance | Rg | 7 | Ω | VGS=0V VDS=0V f=1MHz | 3 | ||
| Input Capacitance | Ciss | 2210 | pF | VGS=0V VDS=-25V f=1MHz | 3 | ||
| Output Capacitance | Coss | 150 | pF | VGS=0V VDS=-25V f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 255 | pF | VGS=0V VDS=-25V f=1MHz | 3 | ||
| Turn-on Delay Time | td(ON) | 11 | ns | VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω | 3 | ||
| Turn-on Rise Time | tr | 7.5 | ns | VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω | 3 | ||
| Turn-off Delay Time | td(OFF) | 43.5 | ns | VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω | 3 | ||
| Turn-off Fall Time | tf | 17.5 | ns | VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω | 3 |
CAD (KiCad official)
- Symbol:
BRCS4407SC - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
brcs4407sc-etched.step/brcs4407sc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);brcs4407sc.step/brcs4407sc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256
2623abcc024281f3, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BRCS4407SC
**Foshan Blue Rocket Elec** · MOSFETs · SOP-8
BRCS4407SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (VDS = -30V, ID = -14A). |
| 2 | S | passive | Source of the P-channel MOSFET (VDS = -30V, ID = -14A). |
| 3 | S | passive | Source of the P-channel MOSFET (VDS = -30V, ID = -14A). |
| 4 | G | input | Gate of the P-channel MOSFET; absolute maximum VGSS is ±25V and RDS(ON) < 14mΩ at VGS = -10V. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | -30 | V | Ta=25℃ | 2 |
| Gate-Source Voltage | VGSS | -25 | | 25 | V | Ta=25℃ | 2 |
| Continuous Drain Current | ID | | | -14 | A | Ta=25°C | 2 |
| Pulsed Drain Current | IDM | | | -56 | A | Ta=25℃ | 2 |
| Power Dissipation for Single Operation | PD | | | 3.1 | W | Ta=25℃ | 2 |
| Maximum Junction Temperature | Tj | | | 150 | ℃ | Ta=25℃ | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | Ta=25℃ | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 40 | ℃/W | t≦10s | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 75 | ℃/W | Steady-State | 2 |
| Maximum Junction-to-Lead | RθJL | | | 24 | ℃/W | Steady-State | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | ID=-250μA VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-24V VGS=0V | 3 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V VGS=±25V | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS ID=-250μA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 11 | 14 | mΩ | VGS=-10V ID=-10A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 14 | 24 | mΩ | VGS=-4.5V ID=-10A | 3 |
| Diode Forward Voltage | VSD | | | -1 | V | IS=-1A VGS=0V | 3 |
| Total Gate Charge | Qg(10V) | | 35 | | nC | VGS=-10V VDS=-15V ID=-14A | 3 |
| Total Gate Charge | Qg(4.5V) | | 17 | | nC | VGS=-10V VDS=-15V ID=-14A | 3 |
| Gate-Source Charge | Qgs | | 5.7 | | nC | VGS=-10V VDS=-15V ID=-14A | 3 |
| Gate-Drain Charge | Qgd | | 8.8 | | nC | VGS=-10V VDS=-15V ID=-14A | 3 |
| Gate Resistance | Rg | | 7 | | Ω | VGS=0V VDS=0V f=1MHz | 3 |
| Input Capacitance | Ciss | | 2210 | | pF | VGS=0V VDS=-25V f=1MHz | 3 |
| Output Capacitance | Coss | | 150 | | pF | VGS=0V VDS=-25V f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 255 | | pF | VGS=0V VDS=-25V f=1MHz | 3 |
| Turn-on Delay Time | td(ON) | | 11 | | ns | VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω | 3 |
| Turn-on Rise Time | tr | | 7.5 | | ns | VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω | 3 |
| Turn-off Delay Time | td(OFF) | | 43.5 | | ns | VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω | 3 |
| Turn-off Fall Time | tf | | 17.5 | | ns | VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω | 3 |
## CAD (KiCad official)
- Symbol: `BRCS4407SC`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `brcs4407sc-etched.step` / `brcs4407sc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `brcs4407sc.step` / `brcs4407sc.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Foshan Blue Rocket Elec datasheet](docs/brcs4407sc-datasheet.pdf) (8 pp, sha256 `2623abcc024281f3`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/brcs4407sc-datasheet.pdf)