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Contents

README

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BRCS4407SC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS4407SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (VDS = -30V, ID = -14A).
2 S passive Source of the P-channel MOSFET (VDS = -30V, ID = -14A).
3 S passive Source of the P-channel MOSFET (VDS = -30V, ID = -14A).
4 G input Gate of the P-channel MOSFET; absolute maximum VGSS is ±25V and RDS(ON) < 14mΩ at VGS = -10V.
5 D passive Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A.
6 D passive Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A.
7 D passive Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A.
8 D passive Drain of the P-channel MOSFET; VDSS is -30V and pulsed drain current IDM is -56A.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V Ta=25℃ 2
Gate-Source Voltage VGSS -25 25 V Ta=25℃ 2
Continuous Drain Current ID -14 A Ta=25°C 2
Pulsed Drain Current IDM -56 A Ta=25℃ 2
Power Dissipation for Single Operation PD 3.1 W Ta=25℃ 2
Maximum Junction Temperature Tj 150 ℃ Ta=25℃ 2
Storage Temperature Range Tstg -55 150 ℃ Ta=25℃ 2
Thermal Resistance Junction to Ambient RθJA 40 ℃/W t≦10s 2
Thermal Resistance Junction to Ambient RθJA 75 ℃/W Steady-State 2
Maximum Junction-to-Lead RθJL 24 ℃/W Steady-State 2
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250μA VGS=0V 3
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V VGS=0V 3
Gate-Body leakage current IGSS -100 100 nA VDS=0V VGS=±25V 3
Gate Threshold Voltage VGS(th) -1 -1.5 -3 V VDS=VGS ID=-250μA 3
Static Drain-Source On-Resistance RDS(ON) 11 14 mΩ VGS=-10V ID=-10A 3
Static Drain-Source On-Resistance RDS(ON) 14 24 mΩ VGS=-4.5V ID=-10A 3
Diode Forward Voltage VSD -1 V IS=-1A VGS=0V 3
Total Gate Charge Qg(10V) 35 nC VGS=-10V VDS=-15V ID=-14A 3
Total Gate Charge Qg(4.5V) 17 nC VGS=-10V VDS=-15V ID=-14A 3
Gate-Source Charge Qgs 5.7 nC VGS=-10V VDS=-15V ID=-14A 3
Gate-Drain Charge Qgd 8.8 nC VGS=-10V VDS=-15V ID=-14A 3
Gate Resistance Rg 7 Ω VGS=0V VDS=0V f=1MHz 3
Input Capacitance Ciss 2210 pF VGS=0V VDS=-25V f=1MHz 3
Output Capacitance Coss 150 pF VGS=0V VDS=-25V f=1MHz 3
Reverse Transfer Capacitance Crss 255 pF VGS=0V VDS=-25V f=1MHz 3
Turn-on Delay Time td(ON) 11 ns VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω 3
Turn-on Rise Time tr 7.5 ns VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω 3
Turn-off Delay Time td(OFF) 43.5 ns VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω 3
Turn-off Fall Time tf 17.5 ns VGS=-10V VDS=-15V RL=1.25Ω RGEN=3Ω 3

CAD (KiCad official)

  • Symbol: BRCS4407SC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs4407sc-etched.step / brcs4407sc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs4407sc.step / brcs4407sc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 2623abcc024281f3, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF