# BR4953D-E

**Foshan Blue Rocket Elec** · MOSFETs · SOP-8

BR4953D-E from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1 in the dual device, which is rated for VDSS -20 V and continuous drain current ID -3.0 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with gate-source voltage limited to VGSS ±12 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2 in the dual device, which is rated for VDSS -20 V and continuous drain current ID -3.0 A. |
| 4 | G2 | input | Gate of P-channel MOSFET 2, with gate-source voltage limited to VGSS ±12 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; the device pulsed drain current IDM is rated -12 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2 (second drain pin for MOSFET 2); the device pulsed drain current IDM is rated -12 A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; the device pulsed drain current IDM is rated -12 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1 (second drain pin for MOSFET 1); the device pulsed drain current IDM is rated -12 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 |  |  | V |  | 2 |
| Gate-Source Voltage | VGSS | -12 |  | 12 | V |  | 2 |
| Continuous Drain Current | ID | -3 |  |  | A | Surface mounted on 1in2 pad area, t ≤ 10 sec | 2 |
| Pulsed Drain Current | IDM | -12 |  |  | A | Surface mounted on 1in2 pad area, t ≤ 10 sec | 2 |
| Diode Continuous Forward Current | IS | -2 |  |  | A | Surface mounted on 1in2 pad area, t ≤ 10 sec | 2 |
| Power Dissipation for Single Operation (Ta=25℃) | PD |  |  | 2 | W | Ta=25℃; surface mounted on 1in2 pad area, t ≤ 10 sec | 2 |
| Power Dissipation for Single Operation (Ta=100℃) | PD |  |  | 0.8 | W | Ta=100℃; surface mounted on 1in2 pad area, t ≤ 10 sec | 2 |
| Maximum Junction Temperature | Tj |  |  | 150 | ℃ |  | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | ℃ |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS=0V IDS=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-16V VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=85℃) | IDSS |  |  | -10 | μA | VDS=-16V VGS=0V TJ=85℃ | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.8 | -1 | V | VDS=VGS IDS=-250μA | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V VDS=0V | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 85 | 97 | mΩ | VGS=-10V IDS=-2.7A | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 82 | 110 | mΩ | VGS=-4.5V IDS=-2.7A | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 130 | 150 | mΩ | VGS=-2.5V IDS=-2.2A | 2 |
| Diode Forward Voltage | VSD |  | -0.7 | -1.3 | V | VGS=0V ISD=-1.0A | 2 |
| Total Gate Charge | Qg |  | 5.8 | 10 | nC | VDS=-6V VGS=-4.5V IDS=-2.7A | 2 |
| Turn-on Delay Time | td(ON) |  | 13 | 25 | ns | VDD=-6V RL=6Ω IDS=-1A VGEN=-10V RG=6Ω | 3 |
| Turn-on Rise Time | Tr |  | 36 | 60 | ns | VDD=-6V RL=6Ω IDS=-1A VGEN=-10V RG=6Ω | 3 |
| Turn-off Delay Time | Td(OFF) |  | 42 | 70 | ns | VDD=-6V RL=6Ω IDS=-1A VGEN=-10V RG=6Ω | 3 |
| Turn-off Fall Time | Tf |  | 34 | 60 | ns | VDD=-6V RL=6Ω IDS=-1A VGEN=-10V RG=6Ω | 3 |
| Gate-Source Charge | Qgs |  | 0.85 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 1.7 |  | nC |  | 2 |
| Gate Resistance | RG |  | 6 |  | Ω | VGS=0V VDS=0V F=1MHz | 3 |
| Input Capacitance | Ciss |  | 415 |  | pF | VGS=0V VDS=-6V Frequency=1.0MHz | 3 |
| Output Capacitance | Coss |  | 223 |  | pF | VGS=0V VDS=-6V Frequency=1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 84 |  | pF | VGS=0V VDS=-6V Frequency=1.0MHz | 3 |
| Thermal Resistance Junction to Ambient | RθJA |  | 62.5 |  | ℃/W | Surface mounted on 1in2 pad area, t ≤ 10 sec | 2 |

## CAD (KiCad official)

- Symbol: `BR4953D-E`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `br4953d-e-etched.step` / `br4953d-e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `br4953d-e.step` / `br4953d-e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Foshan Blue Rocket Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590921428336664576) (7 pp, sha256 `705d2a3439a21c7b`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/br4953d-e-datasheet.pdf)