component
BR4953D-E
Public Made by Adomby adom
Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBR4953D-E
Foshan Blue Rocket Elec · MOSFETs · SOP-8
BR4953D-E from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1 in the dual device, which is rated for VDSS -20 V and continuous drain current ID -3.0 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with gate-source voltage limited to VGSS ±12 V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2 in the dual device, which is rated for VDSS -20 V and continuous drain current ID -3.0 A. |
| 4 | G2 | input | Gate of P-channel MOSFET 2, with gate-source voltage limited to VGSS ±12 V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; the device pulsed drain current IDM is rated -12 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2 (second drain pin for MOSFET 2); the device pulsed drain current IDM is rated -12 A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; the device pulsed drain current IDM is rated -12 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1 (second drain pin for MOSFET 1); the device pulsed drain current IDM is rated -12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | 2 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID | -3 | A | Surface mounted on 1in2 pad area, t ≤ 10 sec | 2 | ||
| Pulsed Drain Current | IDM | -12 | A | Surface mounted on 1in2 pad area, t ≤ 10 sec | 2 | ||
| Diode Continuous Forward Current | IS | -2 | A | Surface mounted on 1in2 pad area, t ≤ 10 sec | 2 | ||
| Power Dissipation for Single Operation (Ta=25℃) | PD | 2 | W | Ta=25℃; surface mounted on 1in2 pad area, t ≤ 10 sec | 2 | ||
| Power Dissipation for Single Operation (Ta=100℃) | PD | 0.8 | W | Ta=100℃; surface mounted on 1in2 pad area, t ≤ 10 sec | 2 | ||
| Maximum Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V IDS=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-16V VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=85℃) | IDSS | -10 | μA | VDS=-16V VGS=0V TJ=85℃ | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.8 | -1 | V | VDS=VGS IDS=-250μA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 85 | 97 | mΩ | VGS=-10V IDS=-2.7A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 82 | 110 | mΩ | VGS=-4.5V IDS=-2.7A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 130 | 150 | mΩ | VGS=-2.5V IDS=-2.2A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1.3 | V | VGS=0V ISD=-1.0A | 2 | |
| Total Gate Charge | Qg | 5.8 | 10 | nC | VDS=-6V VGS=-4.5V IDS=-2.7A | 2 | |
| Turn-on Delay Time | td(ON) | 13 | 25 | ns | VDD=-6V RL=6Ω IDS=-1A VGEN=-10V RG=6Ω | 3 | |
| Turn-on Rise Time | Tr | 36 | 60 | ns | VDD=-6V RL=6Ω IDS=-1A VGEN=-10V RG=6Ω | 3 | |
| Turn-off Delay Time | Td(OFF) | 42 | 70 | ns | VDD=-6V RL=6Ω IDS=-1A VGEN=-10V RG=6Ω | 3 | |
| Turn-off Fall Time | Tf | 34 | 60 | ns | VDD=-6V RL=6Ω IDS=-1A VGEN=-10V RG=6Ω | 3 | |
| Gate-Source Charge | Qgs | 0.85 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 1.7 | nC | 2 | |||
| Gate Resistance | RG | 6 | Ω | VGS=0V VDS=0V F=1MHz | 3 | ||
| Input Capacitance | Ciss | 415 | pF | VGS=0V VDS=-6V Frequency=1.0MHz | 3 | ||
| Output Capacitance | Coss | 223 | pF | VGS=0V VDS=-6V Frequency=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 84 | pF | VGS=0V VDS=-6V Frequency=1.0MHz | 3 | ||
| Thermal Resistance Junction to Ambient | RθJA | 62.5 | ℃/W | Surface mounted on 1in2 pad area, t ≤ 10 sec | 2 |
CAD (KiCad official)
- Symbol:
BR4953D-E - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
br4953d-e-etched.step/br4953d-e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);br4953d-e.step/br4953d-e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (7 pp, sha256
705d2a3439a21c7b, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).