BQ294532DRVR

{
  "schema_version": 1,
  "type": "component",
  "slug": "bq294532drvr",
  "title": "BQ294532DRVR",
  "brief": "Texas Instruments Battery Management, WSON-6-EP(2x2). Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "power management (pmic)",
    "bq294532drvr"
  ],
  "component": {
    "mpn": "BQ294532DRVR",
    "manufacturer": "Texas Instruments",
    "package": "WSON-6-EP(2x2)",
    "pin_count": 7,
    "category": "Power Management (PMIC)",
    "subcategory": "Battery Management",
    "datasheet": "https://www.ti.com/cn/lit/gpn/bq294522",
    "parts": {
      "symbol": "bq294532drvr.kicad_sym",
      "footprint": "bq294532drvr.kicad_mod",
      "model_3d": "bq294532drvr-etched.glb",
      "model_3d_plain": "bq294532drvr.glb",
      "model_3d_step": "bq294532drvr-etched.step",
      "model_3d_step_plain": "bq294532drvr.step",
      "lbr": "bq294532drvr.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "V3",
        "type": "input",
        "description": "Sense input for the positive voltage of the third (top) cell in the stack. Analog input; connected to the cell tap through a series RIN with a CIN bypass to VSS. V3-VSS abs max 30 V; V3-V2 abs max 8 V; leakage <100 nA."
      },
      {
        "number": "2",
        "name": "V2",
        "type": "input",
        "description": "Sense input for the positive voltage of the second cell from the bottom of the stack. Analog input; RC-filtered from the cell tap. V2-VSS abs max 30 V; V2-V1 abs max 8 V; leakage <100 nA."
      },
      {
        "number": "3",
        "name": "VSS",
        "type": "power_in",
        "description": "IC ground. Electrically connected to the negative terminal of the lowest cell in the stack. Must be tied to the exposed thermal PWRPAD on the PCB for proper operation."
      },
      {
        "number": "4",
        "name": "V1",
        "type": "input",
        "description": "Sense input for the positive voltage of the lowest (bottom) cell in the stack. Analog input; RC-filtered from the V1 cell tap. V1-VSS abs max 30 V; leakage <100 nA."
      },
      {
        "number": "5",
        "name": "VDD",
        "type": "power_in",
        "description": "Device power supply. Recommended operating range 3 V to 25 V (abs max 30 V referenced to VSS). Typical ICC ~1 µA when all cell voltages are below the OVP threshold."
      },
      {
        "number": "6",
        "name": "OUT",
        "type": "output",
        "description": "Overvoltage output drive intended for the gate of an external N-channel FET used in the secondary protection path. Driven high after the fixed 4 s delay when any monitored cell exceeds the 4.5 V OVP threshold. OUT-VSS abs max 30 V."
      },
      {
        "number": "PAD",
        "name": "PWRPAD",
        "type": "passive",
        "description": "Exposed thermal pad on the bottom of the SON package. Must be soldered to the PCB and connected to the VSS net for proper thermal and electrical operation."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://www.ti.com/cn/lit/gpn/bq294522",
        "pages": null,
        "sha256": "eb0ec53937b85099",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 7,
        "described": 7,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "bq294532drvr.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          2.0,
          1.98,
          0.82
        ],
        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "a159a524ab16d3406353a16f8c20b59f5679eea26e2d41174628288b5b9da702",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "bq294532drvr-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          2.0,
          1.98,
          0.82
        ],
        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "94988780a987458d030388dd78b76306ed6fcd96237ebdee38040e39c8ad991d",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Texas Instruments",
      "Package": "WSON-6-EP(2x2)",
      "Category": "Power Management (PMIC)",
      "Pins": "7"
    }
  },
  "variants": [
    {
      "mpn": "BQ294532DRVR",
      "kind": "packaging"
    },
    {
      "mpn": "BQ294532DRVRDRVT",
      "kind": "packaging"
    }
  ],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "bq294532drvr"
  ],
  "discovery_pitch": "BQ294532DRVR (Texas Instruments) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "bq294532drvr.kicad_sym",
    "bq294532drvr.kicad_mod",
    "bq294532drvr.glb",
    "bq294532drvr.step",
    "bq294532drvr.lbr",
    "docs/hero.png",
    "docs/bq294532drvr-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html"
  ],
  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-24T18:03:49.590Z"
}