component
BQ25713RSNT
Public Made by Adomby adom
Texas Instruments Battery Management, QFN-32-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"slug": "bq25713rsnt",
"version": "0.1.0",
"type": "component",
"description": "Texas Instruments Battery Management, QFN-32-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"tags": [
"component",
"power management (pmic)",
"bq25713rsnt",
"factory-2.0.0",
"extractor-text"
],
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
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"bq25713rsnt.kicad_sym",
"bq25713rsnt.kicad_mod",
"bq25713rsnt.glb",
"bq25713rsnt.step",
"bq25713rsnt.lbr",
"docs/hero.png",
"docs/bq25713rsnt-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"bq25713rsnt-hero.glb",
"bq25713rsnt-hero.overlay.json"
],
"component": {
"mpn": "BQ25713RSNT",
"manufacturer": "Texas Instruments",
"package": "QFN-32-EP(4x4)",
"pin_count": 33,
"category": "Power Management (PMIC)",
"subcategory": "Battery Management",
"datasheet": "https://www.ti.com/cn/lit/gpn/bq25713b",
"parts": {
"symbol": "bq25713rsnt.kicad_sym",
"footprint": "bq25713rsnt.kicad_mod",
"model_3d": "bq25713rsnt-hero.glb",
"model_3d_plain": "bq25713rsnt.glb",
"model_3d_step": "bq25713rsnt-etched.step",
"model_3d_step_plain": "bq25713rsnt.step",
"lbr": "bq25713rsnt.lbr"
},
"distributor_links": {
"lcsc": "C2878934",
"digikey": "296-50241-2-ND",
"mouser": "595-BQ25713RSNT"
},
"distributor_check": {
"checked_at": "2026-10-08T03:43:03Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": "296-50241-2-ND",
"status": "found",
"lifecycle": "Active"
},
"mouser": {
"pn": "595-BQ25713RSNT",
"status": "found"
}
},
"pins": [
{
"number": "1",
"name": "VBUS",
"type": "power_in",
"description": "Charger input voltage (recommended operating range 0 V to 24 V), and a 1 Ω and 0.47 µF (minimum) input low-pass filter is recommended."
},
{
"number": "2",
"name": "ACN",
"type": "input",
"description": "Input current-sense resistor negative input; an R-C low-pass filter is required between the sense resistor and ACN to suppress high-frequency noise, and ACP/ACN leakage is matched."
},
{
"number": "3",
"name": "ACP",
"type": "input",
"description": "Input current-sense resistor positive input; an R-C low-pass filter is required between the sense resistor and ACP to suppress high-frequency noise, and ACP/ACN leakage is matched."
},
{
"number": "4",
"name": "CHRG_OK",
"type": "output",
"description": "Active-high open-drain indicator that goes high when VBUS rises above 3.5 V (after 50 ms deglitch) or falls below 24.5 V, and goes low when VBUS falls below 3.2 V or rises above 26 V; pull up through 10 kΩ."
},
{
"number": "5",
"name": "OTG/VAP",
"type": "input",
"description": "Active-high enable for OTG or VAP mode, selected by REG0x34[5] (OTG enabled with REG0x35[4]=1 when REG0x34[5]=1; VAP enabled when REG0x34[5]=0)."
},
{
"number": "6",
"name": "ILIM_HIZ",
"type": "input",
"description": "Input current-limit programming pin set by a resistor divider with V(ILIM_HIZ) = 1 V + 40 × IDPM × RAC; the device enters high-impedance mode below 0.4 V and exits above 0.8 V."
},
{
"number": "7",
"name": "VDDA",
"type": "power_in",
"description": "Internal reference bias pin, fed from REGN through a 10 Ω resistor and decoupled to ground with a 1 µF ceramic capacitor."
},
{
"number": "8",
"name": "IADPT",
"type": "output",
"description": "Adapter current monitor output, V(IADPT) = 20 or 40 × (V(ACP) - V(ACN)), clamped below 3.3 V, with a resistor to ground selected per inductor (137 kΩ for 2.2 µH) and a 100 pF or smaller decoupling capacitor."
},
{
"number": "9",
"name": "IBAT",
"type": "output",
"description": "Battery current monitor output, V(IBAT) = 8 or 16 × (V(SRP) - V(SRN)) while charging, clamped below 3.3 V, with a 100 pF or smaller decoupling capacitor, and may be left floating if unused."
},
{
"number": "10",
"name": "PSYS",
"type": "output",
"description": "Current-mode system power monitor output proportional to total adapter and battery power, clamped below 3.3 V, with a resistor to ground to generate the voltage and an optional parallel filter capacitor, and may be left floating if unused."
},
{
"number": "11",
"name": "PROCHOT",
"type": "output",
"description": "Active-low open-drain processor hot indicator that monitors adapter current, battery discharge current and system voltage, with the minimum pulse width programmable in REG0x23[6:3]."
},
{
"number": "12",
"name": "SDA",
"type": "bidirectional",
"description": "I2C open-drain data I/O; connect a 10 kΩ pull-up resistor per the I2C specification, with an input-low threshold of 0.4 V and input-high threshold of 1.3 V."
},
{
"number": "13",
"name": "SCL",
"type": "input",
"description": "I2C clock input; connect a 10 kΩ pull-up resistor per the I2C specification, with an input-low threshold of 0.4 V and input-high threshold of 1.3 V."
},
{
"number": "14",
"name": "CMPIN",
"type": "input",
"description": "Independent comparator input compared against an internal reference (selectable 2.3 V or 1.2 V); tie to ground if the comparator is not used."
},
{
"number": "15",
"name": "CMPOUT",
"type": "output",
"description": "Independent comparator open-drain output that requires a pull-up to a supply rail, with reference, polarity and deglitch time selectable through I2C."
},
{
"number": "16",
"name": "COMP1",
"type": "input",
"description": "Buck-boost converter compensation pin 1; the RC network is specified in the BQ2571X EVM schematic."
},
{
"number": "17",
"name": "COMP2",
"type": "input",
"description": "Buck-boost converter compensation pin 2; the RC network is specified in the BQ2571X EVM schematic."
},
{
"number": "18",
"name": "CELL_BATPRESZ",
"type": "input",
"description": "Cell-count selection input for 1 to 4 cell configurations biased from VDDA, which also sets SYSOVP to 5 V (1S), 12 V (2S) and 19.5 V (3S/4S), and battery removal is indicated when the pin falls below VCELL_BATPRESZ_FALL (15%)."
},
{
"number": "19",
"name": "SRN",
"type": "input",
"description": "Charge-current sense resistor negative input that is also used for battery voltage sensing, with an optional 0.1 µF common-mode capacitor to ground and a 0.1 µF differential capacitor to SRP."
},
{
"number": "20",
"name": "SRP",
"type": "input",
"description": "Charge-current sense resistor positive input, with an optional 0.1 µF common-mode capacitor to ground and a 0.1 µF differential capacitor to SRN, and SRP/SRN leakage is matched."
},
{
"number": "21",
"name": "BATDRV",
"type": "output",
"description": "P-channel battery FET (BATFET) gate driver output that turns the BATFET off when shorted to VSYS and fully on at 10 V below VSYS, with recommended Ciss of 1 nF to 3 nF and less than 5 nF allowed."
},
{
"number": "22",
"name": "VSYS",
"type": "power_in",
"description": "Charger system voltage sense input, where the system voltage regulation limit is programmed in REG0x05/04 and REG0x0D/0C."
},
{
"number": "23",
"name": "SW2",
"type": "passive",
"description": "Boost-mode high-side MOSFET driver source connection to the source of the high-side N-channel MOSFET, rated from -2 V to 24 V for operation."
},
{
"number": "24",
"name": "HIDRV2",
"type": "output",
"description": "Boost-mode high-side power MOSFET (Q4) driver output connected to the high-side N-channel MOSFET gate."
},
{
"number": "25",
"name": "BTST2",
"type": "power_in",
"description": "Boost-mode high-side driver bootstrap supply, with a 0.047 µF capacitor connected between SW2 and BTST2 and an integrated bootstrap diode from REGN."
},
{
"number": "26",
"name": "LODRV2",
"type": "output",
"description": "Boost-mode low-side power MOSFET (Q3) driver output connected to the low-side N-channel MOSFET gate."
},
{
"number": "27",
"name": "PGND",
"type": "power_in",
"description": "Device power ground."
},
{
"number": "28",
"name": "REGN",
"type": "power_out",
"description": "6 V linear regulator output powered from VBUS or VSYS that drives the power-stage gates, requiring a 2.2 µF or 3.3 µF ceramic capacitor to ground."
},
{
"number": "29",
"name": "LODRV1",
"type": "output",
"description": "Buck-mode low-side power MOSFET (Q2) driver output connected to the low-side N-channel MOSFET gate."
},
{
"number": "30",
"name": "BTST1",
"type": "power_in",
"description": "Buck-mode high-side driver bootstrap supply, with a 0.047 µF capacitor connected between SW1 and BTST1 and an integrated bootstrap diode from REGN."
},
{
"number": "31",
"name": "HIDRV1",
"type": "output",
"description": "Buck-mode high-side power MOSFET (Q1) driver output connected to the high-side N-channel MOSFET gate."
},
{
"number": "32",
"name": "SW1",
"type": "passive",
"description": "Buck-mode high-side MOSFET driver source connection to the source of the high-side N-channel MOSFET."
},
{
"number": "33",
"name": "EP",
"type": "passive",
"description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The exposed thermal pad below the IC is listed in the datasheet pin table with no pin number, so it ; The datasheet gives PWR/I/O/O/GND classes only in the pin table, not KiCad ERC types. Types were map; The source datasheet is in Chinese; descriptions were translated into English from the Chinese text,",
"exposed pad 33 added from the footprint"
],
"pages_sent": 60,
"cost_usd": 0.3357,
"at": "2026-10-08T03:42:47"
},
"datasheet": {
"url": "https://www.ti.com/cn/lit/gpn/bq25713b",
"pages": 92,
"sha256": "545440f19c8407fe",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 33,
"described": 33,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "bq25713rsnt.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
4.0,
4.0,
0.6
],
"zmin_mm": 0.0,
"centre_offset_mm": 0.0,
"footprint_binding": "identity",
"sha256": "7b482a511cdf2cf875c31931f9fea7f745b8dac2ea6203531cd6604f40a290cb",
"checked": "2026-10-08",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "bq25713rsnt-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
4.0,
4.0,
0.6
],
"zmin_mm": 0.0,
"centre_offset_mm": 0.0,
"footprint_binding": "identity",
"sha256": "1f6ece6a5436cded239e5527e0bed0acf01e2342601b660107fb821cb31cb2e8",
"checked": "2026-10-08",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
}
}