BQ25710RSNR

{
  "slug": "bq25710rsnr",
  "version": "0.1.0",
  "type": "component",
  "description": "Texas Instruments Battery Management, QFN-32-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
    "component",
    "power management (pmic)",
    "bq25710rsnr",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
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    "bq25710rsnr.step",
    "bq25710rsnr.lbr",
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    "docs/bq25710rsnr-datasheet.pdf",
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  "component": {
    "mpn": "BQ25710RSNR",
    "manufacturer": "Texas Instruments",
    "package": "QFN-32-EP(4x4)",
    "pin_count": 33,
    "category": "Power Management (PMIC)",
    "subcategory": "Battery Management",
    "datasheet": "https://www.ti.com/cn/lit/gpn/bq25710",
    "parts": {
      "symbol": "bq25710rsnr.kicad_sym",
      "footprint": "bq25710rsnr.kicad_mod",
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      "lbr": "bq25710rsnr.lbr"
    },
    "distributor_links": {
      "lcsc": "C2864000"
    },
    "distributor_check": {
      "checked_at": "2026-10-17T14:17:43Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "VBUS",
        "type": "power_in",
        "description": "Charger input voltage; the datasheet recommends a 1 Ω and 0.47 µF (minimum) input low-pass filter, and the input is rated 0 to 24 V (ACOV at 26 V rising)."
      },
      {
        "number": "2",
        "name": "ACN",
        "type": "input",
        "description": "Negative input of the input-current sense resistor; an R-C low-pass filter is required between the sense resistor and ACN to suppress high-frequency noise, and ACP/ACN leakage must match (−16 to 10 µA)."
      },
      {
        "number": "3",
        "name": "ACP",
        "type": "input",
        "description": "Positive input of the input-current sense resistor; an R-C low-pass filter is required between the sense resistor and ACP to suppress high-frequency noise, and ACP/ACN leakage must match."
      },
      {
        "number": "4",
        "name": "CHRG_OK",
        "type": "output",
        "description": "Active-high open-drain indicator that normal power is present at the charger input, pulled up through 10 kΩ; it goes high 50 ms after VBUS rises above 3.5 V or falls below 24.5 V and low when VBUS falls below 3.2 V or rises above 26 V."
      },
      {
        "number": "5",
        "name": "OTG/VAP",
        "type": "input",
        "description": "Active-high pin that enables OTG or VAP mode depending on REG0x32[5]; the input logic-high threshold is 2.1 V and the logic-low threshold is 0.8 V in SMBus mode."
      },
      {
        "number": "6",
        "name": "ILIM_HIZ",
        "type": "input",
        "description": "Input-current limit setting pin programmed through a resistor divider from the rail, using V(ILIM_HIZ) = 1 V + 40 × IDPM × RAC; the device enters high-impedance mode below 0.4 V and exits above 0.8 V."
      },
      {
        "number": "7",
        "name": "VDDA",
        "type": "power_in",
        "description": "Internal reference bias pin fed from REGN through a 10 Ω resistor, with a 1 µF ceramic capacitor to ground, and it must carry the REGN output capacitance (ILOAD 100 µA to 50 mA)."
      },
      {
        "number": "8",
        "name": "IADPT",
        "type": "output",
        "description": "Adapter-current monitor output with V(IADPT) = 20 or 40 × (V(ACP) − V(ACN)), clamped below 3.3 V; a resistor to ground sets the inductor-dependent gain (137 kΩ for 2.2 µH) and a ≤100 pF ceramic capacitor is recommended."
      },
      {
        "number": "9",
        "name": "IBAT",
        "type": "output",
        "description": "Battery-current monitor output with V(IBAT) = 8 or 16 × (V(SRP) − V(SRN)) for charge and 8 or 16 × (V(SRN) − V(SRP)) for discharge, clamped below 3.3 V; it may be left floating if unused and needs a ≤100 pF decoupling capacitor."
      },
      {
        "number": "10",
        "name": "PSYS",
        "type": "output",
        "description": "Current-mode system power monitor output proportional to total adapter plus battery power, clamped below 3.3 V, with gain selectable over SMBus and a filter capacitor in parallel with the resistor to ground; it may be left floating if unused."
      },
      {
        "number": "11",
        "name": "PROCHOT",
        "type": "output",
        "description": "Active-low open-drain processor thermal indicator that monitors adapter current, battery discharge current and system voltage, pulsing low when a PROCHOT profile event triggers with minimum width set in REG0x21[14:11]."
      },
      {
        "number": "12",
        "name": "SDA",
        "type": "bidirectional",
        "description": "SMBus open-drain data I/O that requires a 10 kΩ pull-up resistor per the SMBus specification, with logic-low output saturation of 0.4 V at 5 mA and Schmitt-trigger inputs."
      },
      {
        "number": "13",
        "name": "SCL",
        "type": "input",
        "description": "SMBus clock input connected to the host or smart-battery clock line, requiring a 10 kΩ pull-up resistor per the SMBus specification and operating at 10 to 100 kHz."
      },
      {
        "number": "14",
        "name": "CMPIN",
        "type": "input",
        "description": "Input to the independent comparator, which compares CMPIN to an internal reference (1.2 V or 2.3 V selectable) and drives CMPOUT; tie to ground if the comparator is unused."
      },
      {
        "number": "15",
        "name": "CMPOUT",
        "type": "output",
        "description": "Open-drain output of the independent comparator that requires a pull-up resistor to the pull-up rail; output saturation is 0.4 V at 5 mA sink current."
      },
      {
        "number": "16",
        "name": "COMP1",
        "type": "input",
        "description": "Buck/boost converter compensation pin 1; the RC network for this pin is given in the BQ2571X EVM schematic."
      },
      {
        "number": "17",
        "name": "COMP2",
        "type": "input",
        "description": "Buck/boost converter compensation pin 2; the RC network for this pin is given in the BQ2571X EVM schematic."
      },
      {
        "number": "18",
        "name": "CELL_BATPRESZ",
        "type": "input",
        "description": "Cell-count selection pin for 1 to 4 cell batteries, biased from VDDA; it sets SYSOVP to 5 V (1S), 12 V (2S), or 19.5 V (3S/4S), and pulling it below VCELL_BATPRESZ_FALL (15%) indicates battery removal."
      },
      {
        "number": "19",
        "name": "SRN",
        "type": "input",
        "description": "Negative input of the charge-current sense resistor, also used for battery voltage sensing; it should connect to GND through an optional 0.1 µF capacitor for common-mode filtering and have a 0.1 µF capacitor between SRP and SRN for differential filtering; operating range is 0 to 19.2 V."
      },
      {
        "number": "20",
        "name": "SRP",
        "type": "input",
        "description": "Positive input of the charge-current sense resistor, with optional 0.1 µF common-mode capacitor to GND, a 0.1 µF differential capacitor to SRN, and a capacitor on SRP no larger than 0.1 µF."
      },
      {
        "number": "21",
        "name": "BATDRV",
        "type": "output",
        "description": "P-channel battery FET (BATFET) gate driver output; tying it to VSYS turns the BATFET off, it is fully enhanced when 10 V below VSYS, and it can only drive a gate with Ciss below 5 nF (1 nF to 3 nF recommended)."
      },
      {
        "number": "22",
        "name": "VSYS",
        "type": "passive",
        "description": "Charger system-voltage sense pin used to program the system voltage regulation limits in REG0x15 and REG0x3E, with an operating range of 0 to 19.2 V."
      },
      {
        "number": "23",
        "name": "SW2",
        "type": "passive",
        "description": "Boost-mode high-side MOSFET driver source, connected to the source of the high-side N-channel MOSFET; operating range is −2 to 24 V."
      },
      {
        "number": "24",
        "name": "HIDRV2",
        "type": "output",
        "description": "Boost-mode high-side power MOSFET (Q4) driver output, connected to the gate of the high-side N-channel MOSFET; absolute maximum is −0.3 to 36 V."
      },
      {
        "number": "25",
        "name": "BTST2",
        "type": "power_out",
        "description": "Boost-mode high-side MOSFET driver bootstrap supply, with a 0.047 µF capacitor between SW2 and BTST2 and an integrated bootstrap diode from REGN; the BTST-SW differential is rated 0 to 6.5 V."
      },
      {
        "number": "26",
        "name": "LODRV2",
        "type": "output",
        "description": "Boost-mode low-side power MOSFET (Q3) driver output, connected to the gate of the low-side N-channel MOSFET; the absolute maximum is −4 V to 7 V for 25 ns."
      },
      {
        "number": "27",
        "name": "PGND",
        "type": "power_in",
        "description": "Device power ground for the power stage."
      },
      {
        "number": "28",
        "name": "REGN",
        "type": "power_out",
        "description": "6 V linear regulator output powered from VBUS or VSYS, active when VBUS exceeds VVBUS_CONVEN; it requires a 2.2 µF or 3.3 µF ceramic capacitor to ground and supplies the power-stage gate drivers."
      },
      {
        "number": "29",
        "name": "LODRV1",
        "type": "output",
        "description": "Buck-mode low-side power MOSFET (Q2) driver output, connected to the gate of the low-side N-channel MOSFET; the absolute maximum is −4 V to 7 V for 25 ns."
      },
      {
        "number": "30",
        "name": "BTST1",
        "type": "power_out",
        "description": "Buck-mode high-side MOSFET driver bootstrap supply, with a 0.047 µF capacitor between SW1 and BTST1 and an integrated bootstrap diode from REGN; the BTST-SW differential is rated 0 to 6.5 V."
      },
      {
        "number": "31",
        "name": "HIDRV1",
        "type": "output",
        "description": "Buck-mode high-side power MOSFET (Q1) driver output, connected to the gate of the high-side N-channel MOSFET; the absolute maximum is −4 V to 36 V for 25 ns."
      },
      {
        "number": "32",
        "name": "SW1",
        "type": "passive",
        "description": "Buck-mode high-side MOSFET driver source, connected to the source of the high-side N-channel MOSFET; operating range is −2 to 24 V."
      },
      {
        "number": "33",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The thermal pad under the IC is listed as '–' in the pin table and has no printed number, so it is n; The datasheet classifies VSYS, SW2 and SW1 only as 'PWR'. I assigned passive because they are sense ; BTST1, BTST2 and VDDA are classed as 'PWR' in the datasheet. I assigned power_out for the bootstrap ",
          "exposed pad 33 added from the footprint"
        ],
        "pages_sent": 59,
        "cost_usd": 0.3169,
        "at": "2026-10-17T14:15:13"
      },
      "datasheet": {
        "url": "https://www.ti.com/cn/lit/gpn/bq25710",
        "pages": 91,
        "sha256": "e83fbd7cca9a8583",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 33,
        "described": 33,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
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        "sha256": "7b482a511cdf2cf875c31931f9fea7f745b8dac2ea6203531cd6604f40a290cb",
        "checked": "2026-10-17",
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        "checked": "2026-10-17",
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  }
}