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BQ25710RSNR
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Texas Instruments Battery Management, QFN-32-EP(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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BQ25710RSNR
Texas Instruments · Battery Management · QFN-32-EP(4x4)
BQ25710RSNR from Texas Instruments, in a QFN-32-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VBUS | power_in | Charger input voltage; the datasheet recommends a 1 Ω and 0.47 µF (minimum) input low-pass filter, and the input is rated 0 to 24 V (ACOV at 26 V rising). |
| 2 | ACN | input | Negative input of the input-current sense resistor; an R-C low-pass filter is required between the sense resistor and ACN to suppress high-frequency noise, and ACP/ACN leakage must match (−16 to 10 µA). |
| 3 | ACP | input | Positive input of the input-current sense resistor; an R-C low-pass filter is required between the sense resistor and ACP to suppress high-frequency noise, and ACP/ACN leakage must match. |
| 4 | CHRG_OK | output | Active-high open-drain indicator that normal power is present at the charger input, pulled up through 10 kΩ; it goes high 50 ms after VBUS rises above 3.5 V or falls below 24.5 V and low when VBUS falls below 3.2 V or rises above 26 V. |
| 5 | OTG/VAP | input | Active-high pin that enables OTG or VAP mode depending on REG0x32[5]; the input logic-high threshold is 2.1 V and the logic-low threshold is 0.8 V in SMBus mode. |
| 6 | ILIM_HIZ | input | Input-current limit setting pin programmed through a resistor divider from the rail, using V(ILIM_HIZ) = 1 V + 40 × IDPM × RAC; the device enters high-impedance mode below 0.4 V and exits above 0.8 V. |
| 7 | VDDA | power_in | Internal reference bias pin fed from REGN through a 10 Ω resistor, with a 1 µF ceramic capacitor to ground, and it must carry the REGN output capacitance (ILOAD 100 µA to 50 mA). |
| 8 | IADPT | output | Adapter-current monitor output with V(IADPT) = 20 or 40 × (V(ACP) − V(ACN)), clamped below 3.3 V; a resistor to ground sets the inductor-dependent gain (137 kΩ for 2.2 µH) and a ≤100 pF ceramic capacitor is recommended. |
| 9 | IBAT | output | Battery-current monitor output with V(IBAT) = 8 or 16 × (V(SRP) − V(SRN)) for charge and 8 or 16 × (V(SRN) − V(SRP)) for discharge, clamped below 3.3 V; it may be left floating if unused and needs a ≤100 pF decoupling capacitor. |
| 10 | PSYS | output | Current-mode system power monitor output proportional to total adapter plus battery power, clamped below 3.3 V, with gain selectable over SMBus and a filter capacitor in parallel with the resistor to ground; it may be left floating if unused. |
| 11 | PROCHOT | output | Active-low open-drain processor thermal indicator that monitors adapter current, battery discharge current and system voltage, pulsing low when a PROCHOT profile event triggers with minimum width set in REG0x21[14:11]. |
| 12 | SDA | bidirectional | SMBus open-drain data I/O that requires a 10 kΩ pull-up resistor per the SMBus specification, with logic-low output saturation of 0.4 V at 5 mA and Schmitt-trigger inputs. |
| 13 | SCL | input | SMBus clock input connected to the host or smart-battery clock line, requiring a 10 kΩ pull-up resistor per the SMBus specification and operating at 10 to 100 kHz. |
| 14 | CMPIN | input | Input to the independent comparator, which compares CMPIN to an internal reference (1.2 V or 2.3 V selectable) and drives CMPOUT; tie to ground if the comparator is unused. |
| 15 | CMPOUT | output | Open-drain output of the independent comparator that requires a pull-up resistor to the pull-up rail; output saturation is 0.4 V at 5 mA sink current. |
| 16 | COMP1 | input | Buck/boost converter compensation pin 1; the RC network for this pin is given in the BQ2571X EVM schematic. |
| 17 | COMP2 | input | Buck/boost converter compensation pin 2; the RC network for this pin is given in the BQ2571X EVM schematic. |
| 18 | CELL_BATPRESZ | input | Cell-count selection pin for 1 to 4 cell batteries, biased from VDDA; it sets SYSOVP to 5 V (1S), 12 V (2S), or 19.5 V (3S/4S), and pulling it below VCELL_BATPRESZ_FALL (15%) indicates battery removal. |
| 19 | SRN | input | Negative input of the charge-current sense resistor, also used for battery voltage sensing; it should connect to GND through an optional 0.1 µF capacitor for common-mode filtering and have a 0.1 µF capacitor between SRP and SRN for differential filtering; operating range is 0 to 19.2 V. |
| 20 | SRP | input | Positive input of the charge-current sense resistor, with optional 0.1 µF common-mode capacitor to GND, a 0.1 µF differential capacitor to SRN, and a capacitor on SRP no larger than 0.1 µF. |
| 21 | BATDRV | output | P-channel battery FET (BATFET) gate driver output; tying it to VSYS turns the BATFET off, it is fully enhanced when 10 V below VSYS, and it can only drive a gate with Ciss below 5 nF (1 nF to 3 nF recommended). |
| 22 | VSYS | passive | Charger system-voltage sense pin used to program the system voltage regulation limits in REG0x15 and REG0x3E, with an operating range of 0 to 19.2 V. |
| 23 | SW2 | passive | Boost-mode high-side MOSFET driver source, connected to the source of the high-side N-channel MOSFET; operating range is −2 to 24 V. |
| 24 | HIDRV2 | output | Boost-mode high-side power MOSFET (Q4) driver output, connected to the gate of the high-side N-channel MOSFET; absolute maximum is −0.3 to 36 V. |
| 25 | BTST2 | power_out | Boost-mode high-side MOSFET driver bootstrap supply, with a 0.047 µF capacitor between SW2 and BTST2 and an integrated bootstrap diode from REGN; the BTST-SW differential is rated 0 to 6.5 V. |
| 26 | LODRV2 | output | Boost-mode low-side power MOSFET (Q3) driver output, connected to the gate of the low-side N-channel MOSFET; the absolute maximum is −4 V to 7 V for 25 ns. |
| 27 | PGND | power_in | Device power ground for the power stage. |
| 28 | REGN | power_out | 6 V linear regulator output powered from VBUS or VSYS, active when VBUS exceeds VVBUS_CONVEN; it requires a 2.2 µF or 3.3 µF ceramic capacitor to ground and supplies the power-stage gate drivers. |
| 29 | LODRV1 | output | Buck-mode low-side power MOSFET (Q2) driver output, connected to the gate of the low-side N-channel MOSFET; the absolute maximum is −4 V to 7 V for 25 ns. |
| 30 | BTST1 | power_out | Buck-mode high-side MOSFET driver bootstrap supply, with a 0.047 µF capacitor between SW1 and BTST1 and an integrated bootstrap diode from REGN; the BTST-SW differential is rated 0 to 6.5 V. |
| 31 | HIDRV1 | output | Buck-mode high-side power MOSFET (Q1) driver output, connected to the gate of the high-side N-channel MOSFET; the absolute maximum is −4 V to 36 V for 25 ns. |
| 32 | SW1 | passive | Buck-mode high-side MOSFET driver source, connected to the source of the high-side N-channel MOSFET; operating range is −2 to 24 V. |
| 33 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | QFN-32-EP(4x4) |
| Category | Power Management (PMIC) |
| Pins | 33 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| 电压 - SRN、SRP、ACN、ACP、VBUS、VSYS | -0.3 | 30 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - SW1、SW2 | -2 | 30 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - BTST1、BTST2、HIDRV1、HIDRV2、/BATDRV | -0.3 | 36 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - LODRV1、LODRV2 | -4 | 7 | V | 25nS；自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - HIDRV1、HIDRV2 | -4 | 36 | V | 25nS；自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - SW1、SW2 | -4 | 30 | V | 25nS；自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - SDA、SCL、REGN、PSYS、CHRG_OK、OTG/VAP、CELL_BATPRESZ、ILIM_HIZ、LODRV1、LODRV2、VDDA、COMP1、COMP2、CMPIN、CMPOUT | -0.3 | 7 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - /PROCHOT | -0.3 | 5.5 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - IADPT、IBAT、PSYS | -0.3 | 3.6 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 差分电压 - BTST1-SW1、BTST2-SW2、HIDRV1-SW1、HIDRV2-SW2 | -0.3 | 7 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 差分电压 - SRP-SRN、ACP-ACN | -0.5 | 0.5 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 结温范围，TJ | TJ | -40 | 155 | °C | 9 | ||
| 贮存温度，Tstg | Tstg | -40 | 155 | °C | 9 | ||
| 电压 - ACN、ACP、VBUS | 0 | 24 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - SRN、SRP、VSYS | 0 | 19.2 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - SW1、SW2 | -2 | 24 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - BTST1、BTST2、HIDRV1、HIDRV2、/BATDRV | 0 | 30 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - SDA、SCL、REGN、PSYS、CHRG_OK、OTG/VAP、CELL_BATPRESZ、ILIM_HIZ、LODRV1、LODRV2、VDDA、COMP1、COMP2、CMPIN、CMPOUT | 0 | 6.5 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - /PROCHOT | 0 | 5.3 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 电压 - IADPT、IBAT、PSYS | 0 | 3.3 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 差分电压 - BTST1-SW1、BTST2-SW2、HIDRV1-SW1、HIDRV2-SW2 | 0 | 6.5 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 差分电压 - SRP-SRN、ACP-ACN | -0.5 | 0.5 | V | 自然通风条件下的工作温度范围内测得（除非另有说明） | 9 | ||
| 结温范围，TJ | TJ | -20 | 125 | °C | 10 | ||
| 自然通风条件下的工作温度范围，TJ | TJ | -40 | 85 | °C | 10 | ||
| 输入电压工作范围 | VINPUT_OP | 3.5 | 26 | V | 10 | ||
| 系统电压调节范围（最大系统电压调节），在 VSYS 上测量 | VSYSMAX_RNG | 1.024 | 19.2 | V | 禁用充电 | 10 | |
| 系统电压调节精度（禁用充电） | VSYSMAX_ACC | -2 | 2 | % | REG0x15() = 0x41A0H (16.800V) | 10 | |
| 系统电压调节精度（禁用充电） | VSYSMAX_ACC | -3 | 3 | % | REG0x15() = 0x20D0H (8.400V) | 10 | |
| 最小系统电压调节范围，在 VSYS 上测量 | VSYSMIN_RNG | 1.024 | 19.2 | V | 10 | ||
| 最小系统电压调节精度（VBAT 低于 REG0x3E() 设置） | VSYSMIN_REG_ACC | -2 | 2 | % | REG0x3E() = 0x3000H (12.288 V) | 11 | |
| 最小系统电压调节精度（VBAT 低于 REG0x3E() 设置） | VSYSMIN_REG_ACC | -3 | 3 | % | REG0x3E() = 0x1800H (6.144 V) | 11 | |
| 电池电压调节范围 | VBAT_RNG | 1.024 | 19.2 | V | 11 | ||
| 电池电压调节精度（充电启用） | VBAT_REG_ACC | -0.5 | 0.5 | % | REG0x15() = 0x41A0H (16.8 V)；0°C 至 85°C | 11 | |
| 电池电压调节精度（充电启用） | VBAT_REG_ACC | -0.6 | 0.6 | % | REG0x15() = 0x20D0H (8.4 V)；0°C 至 85°C | 11 | |
| 电池电压调节精度（充电启用） | VBAT_REG_ACC | -1.1 | 1.2 | % | REG0x15() = 0x1068H (4.2 V)；0°C 至 85°C | 11 | |
| 充电电流调节精度（10mΩ 检测电阻，VBAT 高于 REG0x3E() 设置） | ICHRG_REG_ACC | -3 | 2 | % | REG0x14() = 0x1000H (4096 mA)；0°C 至 85°C | 11 | |
| 充电电流调节精度（10mΩ 检测电阻，VBAT 高于 REG0x3E() 设置） | ICHRG_REG_ACC | -4 | 3 | % | REG0x14() = 0x0800H (2048 mA)；0°C 至 85°C | 11 | |
| 充电电流调节精度（10mΩ 检测电阻，VBAT 高于 REG0x3E() 设置） | ICHRG_REG_ACC | -5 | 6 | % | REG0x14() = 0x0400H (1024 mA)；0°C 至 85°C | 11 | |
| 充电电流调节精度（10mΩ 检测电阻，VBAT 高于 REG0x3E() 设置） | ICHRG_REG_ACC | -12 | 12 | % | REG0x14() = 0x0200H (512 mA)；0°C 至 85°C | 11 | |
| 输入电流调节精度（使用 10mΩ ACP/ACN 串联电阻，-40°C 至 105°C） | IDPM_REG_ACC | 3800 | 3900 | 4000 | mA | REG0x3F() = 0x5000H | 12 |
| 输入电流调节精度（使用 10mΩ ACP/ACN 串联电阻，-40°C 至 105°C） | IDPM_REG_ACC | 2800 | 2900 | 3000 | mA | REG0x3F() = 0x3C00H | 12 |
| 输入电流调节精度（使用 10mΩ ACP/ACN 串联电阻，-40°C 至 105°C） | IDPM_REG_ACC | 1300 | 1400 | 1500 | mA | REG0x3F() = 0x1E00H | 12 |
| 输入电流调节精度（使用 10mΩ ACP/ACN 串联电阻，-40°C 至 105°C） | IDPM_REG_ACC | 300 | 400 | 500 | mA | REG0x3F() = 0x0A00H | 12 |
| 输入电压调节精度 | VDPM_REG_ACC | -3 | 2 | % | REG0x3D()=0x3C80H，18688 mV | 12 | |
| 输入电压调节精度 | VDPM_REG_ACC | -4 | 2.5 | % | REG0x3D()=0x1E00H，10880 mV | 12 | |
| 输入电压调节精度 | VDPM_REG_ACC | -5 | 5 | % | REG0x3D()=0x0500H，4480 mV | 12 | |
| 静态电流 IBAT_BATFET_ON（电池供电系统，BATFET 开启） | IBAT_BATFET_ON | 22 | 45 | µA | VBAT = 18V，REG0x12[15] = 1，在低功耗模式下 | 13 | |
| 静态电流 IBAT_BATFET_ON（电池供电系统，BATFET 开启） | IBAT_BATFET_ON | 125 | 195 | µA | VBAT = 18V，REG0x12[15] = 1，REG0x30[13] = 1，REGN 关闭 | 13 | |
| 静态电流 IBAT_BATFET_ON（电池供电系统，BATFET 开启） | IBAT_BATFET_ON | 880 | 1170 | µA | VBAT = 18V，REG0x12[15] = 0，REG0x30[12] = 0，REGN 开启，DIS_PSYS | 13 | |
| 静态电流 IBAT_BATFET_ON（电池供电系统，BATFET 开启） | IBAT_BATFET_ON | 980 | 1270 | µA | VBAT = 18V，REG0x12[15] = 0，REG0x30[12] = 1，REGN 开启，EN_PSYS | 13 | |
| PWM 开关频率（REG0x12[9] = 0） | FSW | 1020 | 1200 | 1380 | kHz | REG0x12[9] = 0 | 17 |
| PWM 开关频率（REG0x12[9] = 1） | FSW | 680 | 800 | 920 | kHz | REG0x12[9] = 1 | 17 |
| 结至环境热阻 RθJA（32 引脚 RSN WQFN） | RθJA | 37.2 | °C/W | 10 | |||
| 结至电路板热阻 RθJB（32 引脚 RSN WQFN） | RθJB | 7.8 | °C/W | 10 | |||
| 结至外壳（底部）热阻 RθJC(bot)（32 引脚 RSN WQFN） | RθJC(bot) | 2.3 | °C/W | 10 |
CAD (KiCad official)
- Symbol:
BQ25710RSNR - Footprint:
Package_DFN_QFN:QFN-32-1EP_4x4mm_P0.4mm_EP2.9x2.9mm - 3D model: QFN-32-EP(4x4) (KiCad packages3D, STEP)
- 3D model files:
bq25710rsnr-etched.step/bq25710rsnr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq25710rsnr.step/bq25710rsnr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (91 pp, sha256
e83fbd7cca9a8583, retrieved 2026-10-17, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).