component
BQ25619ERTWR
Public Made by Adomby adom
Texas Instruments Battery Management ICs, WQFN-24(4x4). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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BQ25619ERTWR
Texas Instruments · Battery Management ICs · WQFN-24(4x4)
BQ25619ERTWR from Texas Instruments, in a WQFN-24(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VAC | input | Input voltage sensing pin that must be connected to VBUS; used for input overvoltage (ACOV) detection. |
| 2 | PSEL | input | Power source selection input: high sets 500mA input current limit, low sets 2.4A, and the host can later program IINDPM through I2C. |
| 3 | /PG | output | Open-drain active-low power-good indicator, pulled up through 10kΩ; low means a good input source (BQ25619E only). |
| 4 | STAT | output | Open-drain charger status output pulled up through 10kΩ: low when charging, high when charge complete or sleep, blinks at 1Hz on charge suspend fault. |
| 5 | SCL | input | I2C interface clock, connected to the logic rail through a 10kΩ resistor. |
| 6 | SDA | bidirectional | I2C interface data, open-drain, connected to the logic rail through a 10kΩ resistor. |
| 7 | /INT | output | Open-drain interrupt output pulled up to the logic rail through 10kΩ; sends an active-low 256μs pulse to the host to report charger status and faults. |
| 8 | NC | unconnected | Not connected; leave this pin floating. |
| 9 | /CE | input | Charge enable input; battery charging is enabled when the pin is driven low. |
| 10 | BATSNS | bidirectional | Battery voltage sensing pin for charge voltage regulation; connect as close as possible to the battery pack positive terminal to minimize parasitic lead resistance. |
| 11 | TS | input | Battery temperature qualification voltage input for an NTC thermistor (103AT-2 recommended) with a REGN-TS-GND divider; charging suspends when the voltage is out of range. |
| 12 | /QON | input | BATFET enable/reset control input with internal 200kΩ pull-up to VBAT and 6.5V internal clamp; low for tSHIPMODE exits ship mode, low for tQON_RST (min 8s) resets the system. |
| 13 | BAT | power_in | Battery connection to the pack positive terminal, with internal current sense resistor between SYS and BAT; connect a 10µF capacitor close to the pin. |
| 14 | BAT | power_in | Battery connection to the pack positive terminal, with internal current sense resistor between SYS and BAT; connect a 10µF capacitor close to the pin. |
| 15 | SYS | power_out | Converter output connection point with internal current sense resistor between SYS and BAT; connect at least 10µF close to the pin. |
| 16 | SYS | power_out | Converter output connection point with internal current sense resistor between SYS and BAT; connect at least 10µF close to the pin. |
| 17 | GND | power_in | Ground. |
| 18 | GND | power_in | Ground. |
| 19 | SW | power_out | Switching node connected to the output inductor, internally the source of the HSFET and drain of the LSFET; a 0.047μF bootstrap capacitor goes between SW and BTST. |
| 20 | SW | power_out | Switching node connected to the output inductor, internally the source of the HSFET and drain of the LSFET; a 0.047μF bootstrap capacitor goes between SW and BTST. |
| 21 | BTST | power_in | PWM high-side driver positive supply, internally connected to the bootstrap diode cathode; connect a 0.047μF bootstrap capacitor between SW and BTST. |
| 22 | REGN | power_out | PWM low-side driver positive supply output, internally connected to the bootstrap diode anode; connect a 4.7µF (10V rated) ceramic capacitor to analog GND close to the IC. |
| 23 | PMID | passive | Connected to the drain of the reverse blocking MOSFET (RBFET) and the drain of the HSFET; typical capacitance 2x4.7μF + 1nF between PMID and GND. |
| 24 | VBUS | power_in | Charger input voltage with the internal reverse blocking MOSFET between VBUS and PMID; place a 1μF ceramic capacitor between VBUS and GND as close to the IC as possible. |
| 25 | PAD | power_in | Thermal pad that is the device ground reference and low thermal impedance path to the PCB; must be connected externally to the ground plane. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WQFN-24(4x4) |
| Category | Power Supply Chip |
| Pins | 25 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Voltage VBUS (converter not switching) | VBUS | -2 | 22 | V | 转换器不进行开关 | 7 | |
| Voltage PMID (converter not switching) | PMID | -0.3 | 22 | V | 转换器不进行开关 | 7 | |
| Voltage SW | SW | -0.3 | 16 | V | 7 | ||
| Voltage BAT, SYS (converter not switching) | -0.3 | 7 | V | 转换器不进行开关 | 7 | ||
| Voltage BTST | BTST | -0.3 | 22 | V | 7 | ||
| Voltage PSEL, STAT, SCL, SDA, INT, PG, CE, TS, QON | -0.3 | 7 | V | 7 | |||
| Output sink current SDA, STAT, INT, PG | 6 | mA | 7 | ||||
| Junction temperature | TJ | -40 | 150 | °C | 7 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 7 | ||
| Input voltage VVBUS | VVBUS | 4 | 13.5 | V | 7 | ||
| Battery voltage VBAT | VBAT | 4.52 | V | 7 | |||
| Input current IVBUS | IVBUS | 3.2 | A | 7 | |||
| Output current (SW) | ISW | 1.8 | A | 7 | |||
| Fast charge current | IBAT | 1.5 | A | 7 | |||
| Ambient temperature | TA | -40 | 85 | °C | 7 | ||
| Inductance | L | 1 | 2.2 | µH | 7 | ||
| VBUS capacitance | CVBUS | 1 | µF | 7 | |||
| REGN capacitance | CREGN | 4.7 | µF | 7 | |||
| Quiescent battery current (BATSNS, BAT, SYS, SW) | IQ_BAT | 9.5 | 15 | µA | VBAT = 4.5V，VBUS 悬空，SCL，SDA = 0V 或 1.8V，TJ < 85°C，BATFET 启用 | 8 | |
| Shipping mode battery current (BATSNS, BAT, SYS, SW) | ISHIP_BAT | 7 | 9.5 | µA | VBAT = 4.5V，VBUS 悬空，SCL，SDA = 0V 或 1.8V，TJ < 85°C，BATFET 禁用 | 8 | |
| High-impedance mode quiescent input current (VAC/VBUS) | IHIZ_VBUS | 37 | 50 | µA | VAC/VBUS = 5V，高阻态模式，无电池 | 8 | |
| High-impedance mode quiescent input current (VAC/VBUS) | IHIZ_VBUS | 68 | 90 | µA | VAC/VBUS = 12V，高阻态模式，无电池 | 8 | |
| VBUS rising threshold for active I2C, no battery | VVBUS_UVLOZ | 3.3 | 3.7 | V | VBUS 上升用于有源 I2C，无电池 | 8 | |
| VBUS falling threshold to disable I2C, no battery | VVBUS_UVLO | 3 | 3.3 | V | VBUS 下降以关闭 I2C，无电池 | 8 | |
| VBUS rising threshold to enable REGN | VVBUS_PRESENT | 3.65 | 3.9 | V | 通过 VBUS 来启用 REGN，VBUS 上升 | 8 | |
| VBUS falling threshold to disable REGN | VVBUS_PRESENTZ | 3.15 | 3.4 | V | 通过 VBUS 来禁用 REGN，VBUS 下降 | 8 | |
| Sleep mode entry threshold VBUS - VBAT | VSLEEP | 15 | 60 | 110 | mV | VBUS 下降，VBUS - VBAT，VBAT = 4V | 8 |
| Sleep mode exit threshold VBUS - VBAT | VSLEEPZ | 115 | 220 | 340 | mV | VBUS 上升，VBUS - VBAT，VBAT = 4V | 8 |
| VAC overvoltage rising threshold (switch off) | VACOV | 13.5 | 14.2 | 14.85 | V | VAC 上升，OVP[1:0]=11（默认值） | 8 |
| System minimum regulation voltage | VSYS_MIN | 3.5 | 3.65 | V | VBAT = 3.2V < SYS_MIN = 3.5V，ISYS = 0A | 9 | |
| Charge voltage accuracy VREG = 4.2V | VREG_ACC | 4.179 | 4.2 | 4.221 | V | VREG = 4.2V，TJ = -40°C - 85°C | 9 |
| Charge voltage accuracy VREG = 4.35V | VREG_ACC | 4.329 | 4.35 | 4.371 | V | VREG = 4.35V，TJ = -40°C - 85°C | 9 |
| Charge voltage accuracy VREG = 4.45V | VREG_ACC | 4.428 | 4.45 | 4.472 | V | VREG = 4.45V，TJ = -40°C - 85°C | 9 |
| Fast charge current accuracy ICHG = 0.24A | ICHG_ACC | 0.216 | 0.24 | 0.264 | A | ICHG = 0.24A，VBAT = 3.1V 或 3.8V，TJ = -40°C - 85°C | 9 |
| Fast charge current accuracy ICHG = 0.72A | ICHG_ACC | 0.6768 | 0.72 | 0.7632 | A | ICHG = 0.72A，VBAT = 3.1V 或 3.8V，TJ = -40°C - 85°C | 9 |
| Fast charge current accuracy ICHG = 1.50A | ICHG_ACC | 1.41 | 1.5 | 1.59 | A | ICHG = 1.50A，VBAT = 3.1V 或 3.8V，TJ = -40°C - 85°C | 9 |
| Precharge current accuracy | IPRECHG_ACC | 28 | 40 | 52 | mA | VBAT = 2.6V，IPRECHG = 40mA | 9 |
| Termination current accuracy | ITERM_ACC | 10 | 20 | 30 | mA | ITERM = 20mA，ICHG < 260mA，VREG = 4.35V，TJ = 0°C - 85°C | 9 |
| Battery LOWV rising threshold to start fast charge | VBATLOWV | 3 | 3.12 | 3.24 | V | 开始快速充电的电池 LOWV 上升阈值，VBAT 上升 | 10 |
| Battery recharge threshold | VRECHG | 90 | 120 | 150 | mV | VRECHG = 0，VBAT 下降（默认值） | 10 |
| Battery FET on-resistance TJ = -40°C - 85°C | RON_BATFET | 19.5 | 26 | mΩ | TJ = -40°C - 85°C | 10 | |
| Battery overvoltage rising threshold (percent of VREG) | VBAT_OVP | 103 | 104 | 105 | % | VBAT 上升，以 VREG 的百分比表示 | 10 |
| Input voltage regulation accuracy (VINDPM) | VINDPM_ACC | 4.365 | 4.5 | 4.635 | V | 典型输入电压调节精度 | 10 |
| Input current regulation accuracy IINDPM = 500mA | IINDPM_ACC | 450 | 465 | 500 | mA | IINDPM = 500mA (TJ = -40°C - 85°C) | 10 |
| System discharge load current during SYSOVP | ISYS_LOAD | 30 | mA | SYSOVP 期间的系统放电负载电流 | 10 | ||
| Thermal shutdown rising threshold | TSHUT | 150 | °C | 热关断上升阈值，温度升高 | 10 | ||
| PWM switching frequency | FSW | 1.32 | 1.5 | 1.68 | MHz | 振荡器频率 | 11 |
| Maximum PWM duty cycle | DMAX | 97 | % | 最大 PWM 占空比 | 11 | ||
| REGN LDO output voltage VVBUS = 5V | VREGN | 4.58 | 4.7 | 4.8 | V | VVBUS = 5V，IREGN = 20mA | 11 |
| I2C SCL clock frequency | fSCL | 400 | kHz | 12 | |||
| Fast charge safety timer accuracy CHG_TIMER = 20hr | tSAFETY | 17 | 20 | 24 | hr | 快速充电安全计时器精度，CHG_TIMER = 20hr | 12 |
| Watchdog reset time (REG05[5:4] = 160s) | tWDT | 160 | s | WATCHDOG REG05[5:4] = 160s | 12 | ||
| Thermal resistance junction-to-ambient (JEDEC) | RθJA | 35.6 | °C/W | RTW (WQFN) 24 引脚，JEDEC | 8 | ||
| Thermal resistance junction-to-case (top) | RθJC(top) | 22.7 | °C/W | RTW (WQFN) 24 引脚 | 8 | ||
| Thermal resistance junction-to-board | RθJB | 11.9 | °C/W | RTW (WQFN) 24 引脚 | 8 | ||
| Thermal resistance junction-to-case (bottom) | RθJC(bot) | 2.6 | °C/W | RTW (WQFN) 24 引脚 | 8 | ||
| RBFET on-resistance (BQ25619E) | RON_RBFET | 45 | mΩ | 阻断 FET 导通电阻 (BQ25619E) | 9 | ||
| HSFET on-resistance (BQ25619E) | RON_HSFET | 62 | mΩ | 高侧开关 FET 导通电阻 (BQ25619E) | 9 | ||
| LSFET on-resistance (BQ25619E) | RON_LSFET | 71 | mΩ | 低侧开关 FET 导通电阻 (BQ25619E) | 9 |
CAD (KiCad official)
- Symbol:
BQ25619ERTWR - Footprint:
Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm - 3D model: WQFN-24(4x4) (KiCad packages3D, STEP)
- 3D model files:
bq25619ertwr-etched.step/bq25619ertwr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq25619ertwr.step/bq25619ertwr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (64 pp, sha256
19f9af0505f17f92, retrieved 2026-11-07, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).