BQ25619ERTWR from Texas Instruments, in a WQFN-24(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	VAC	input	Input voltage sensing pin that must be connected to VBUS; used for input overvoltage (ACOV) detection.
2	PSEL	input	Power source selection input: high sets 500mA input current limit, low sets 2.4A, and the host can later program IINDPM through I2C.
3	/PG	output	Open-drain active-low power-good indicator, pulled up through 10kΩ; low means a good input source (BQ25619E only).
4	STAT	output	Open-drain charger status output pulled up through 10kΩ: low when charging, high when charge complete or sleep, blinks at 1Hz on charge suspend fault.
5	SCL	input	I2C interface clock, connected to the logic rail through a 10kΩ resistor.
6	SDA	bidirectional	I2C interface data, open-drain, connected to the logic rail through a 10kΩ resistor.
7	/INT	output	Open-drain interrupt output pulled up to the logic rail through 10kΩ; sends an active-low 256μs pulse to the host to report charger status and faults.
8	NC	unconnected	Not connected; leave this pin floating.
9	/CE	input	Charge enable input; battery charging is enabled when the pin is driven low.
10	BATSNS	bidirectional	Battery voltage sensing pin for charge voltage regulation; connect as close as possible to the battery pack positive terminal to minimize parasitic lead resistance.
11	TS	input	Battery temperature qualification voltage input for an NTC thermistor (103AT-2 recommended) with a REGN-TS-GND divider; charging suspends when the voltage is out of range.
12	/QON	input	BATFET enable/reset control input with internal 200kΩ pull-up to VBAT and 6.5V internal clamp; low for tSHIPMODE exits ship mode, low for tQON_RST (min 8s) resets the system.
13	BAT	power_in	Battery connection to the pack positive terminal, with internal current sense resistor between SYS and BAT; connect a 10µF capacitor close to the pin.
14	BAT	power_in	Battery connection to the pack positive terminal, with internal current sense resistor between SYS and BAT; connect a 10µF capacitor close to the pin.
15	SYS	power_out	Converter output connection point with internal current sense resistor between SYS and BAT; connect at least 10µF close to the pin.
16	SYS	power_out	Converter output connection point with internal current sense resistor between SYS and BAT; connect at least 10µF close to the pin.
17	GND	power_in	Ground.
18	GND	power_in	Ground.
19	SW	power_out	Switching node connected to the output inductor, internally the source of the HSFET and drain of the LSFET; a 0.047μF bootstrap capacitor goes between SW and BTST.
20	SW	power_out	Switching node connected to the output inductor, internally the source of the HSFET and drain of the LSFET; a 0.047μF bootstrap capacitor goes between SW and BTST.
21	BTST	power_in	PWM high-side driver positive supply, internally connected to the bootstrap diode cathode; connect a 0.047μF bootstrap capacitor between SW and BTST.
22	REGN	power_out	PWM low-side driver positive supply output, internally connected to the bootstrap diode anode; connect a 4.7µF (10V rated) ceramic capacitor to analog GND close to the IC.
23	PMID	passive	Connected to the drain of the reverse blocking MOSFET (RBFET) and the drain of the HSFET; typical capacitance 2x4.7μF + 1nF between PMID and GND.
24	VBUS	power_in	Charger input voltage with the internal reverse blocking MOSFET between VBUS and PMID; place a 1μF ceramic capacitor between VBUS and GND as close to the IC as possible.
25	PAD	power_in	Thermal pad that is the device ground reference and low thermal impedance path to the PCB; must be connected externally to the ground plane.

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	WQFN-24(4x4)
Category	Power Supply Chip
Pins	25

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Voltage VBUS (converter not switching)	VBUS	-2		22	V	转换器不进行开关	7
Voltage PMID (converter not switching)	PMID	-0.3		22	V	转换器不进行开关	7
Voltage SW	SW	-0.3		16	V		7
Voltage BAT, SYS (converter not switching)		-0.3		7	V	转换器不进行开关	7
Voltage BTST	BTST	-0.3		22	V		7
Voltage PSEL, STAT, SCL, SDA, INT, PG, CE, TS, QON		-0.3		7	V		7
Output sink current SDA, STAT, INT, PG				6	mA		7
Junction temperature	TJ	-40		150	°C		7
Storage temperature	Tstg	-55		150	°C		7
Input voltage VVBUS	VVBUS	4		13.5	V		7
Battery voltage VBAT	VBAT			4.52	V		7
Input current IVBUS	IVBUS			3.2	A		7
Output current (SW)	ISW			1.8	A		7
Fast charge current	IBAT			1.5	A		7
Ambient temperature	TA	-40		85	°C		7
Inductance	L	1		2.2	µH		7
VBUS capacitance	CVBUS		1		µF		7
REGN capacitance	CREGN		4.7		µF		7
Quiescent battery current (BATSNS, BAT, SYS, SW)	IQ_BAT	9.5		15	µA	VBAT = 4.5V，VBUS 悬空，SCL，SDA = 0V 或 1.8V，TJ < 85°C，BATFET 启用	8
Shipping mode battery current (BATSNS, BAT, SYS, SW)	ISHIP_BAT	7		9.5	µA	VBAT = 4.5V，VBUS 悬空，SCL，SDA = 0V 或 1.8V，TJ < 85°C，BATFET 禁用	8
High-impedance mode quiescent input current (VAC/VBUS)	IHIZ_VBUS	37		50	µA	VAC/VBUS = 5V，高阻态模式，无电池	8
High-impedance mode quiescent input current (VAC/VBUS)	IHIZ_VBUS	68		90	µA	VAC/VBUS = 12V，高阻态模式，无电池	8
VBUS rising threshold for active I2C, no battery	VVBUS_UVLOZ	3.3		3.7	V	VBUS 上升用于有源 I2C，无电池	8
VBUS falling threshold to disable I2C, no battery	VVBUS_UVLO	3		3.3	V	VBUS 下降以关闭 I2C，无电池	8
VBUS rising threshold to enable REGN	VVBUS_PRESENT	3.65		3.9	V	通过 VBUS 来启用 REGN，VBUS 上升	8
VBUS falling threshold to disable REGN	VVBUS_PRESENTZ	3.15		3.4	V	通过 VBUS 来禁用 REGN，VBUS 下降	8
Sleep mode entry threshold VBUS - VBAT	VSLEEP	15	60	110	mV	VBUS 下降，VBUS - VBAT，VBAT = 4V	8
Sleep mode exit threshold VBUS - VBAT	VSLEEPZ	115	220	340	mV	VBUS 上升，VBUS - VBAT，VBAT = 4V	8
VAC overvoltage rising threshold (switch off)	VACOV	13.5	14.2	14.85	V	VAC 上升，OVP[1:0]=11（默认值）	8
System minimum regulation voltage	VSYS_MIN	3.5		3.65	V	VBAT = 3.2V < SYS_MIN = 3.5V，ISYS = 0A	9
Charge voltage accuracy VREG = 4.2V	VREG_ACC	4.179	4.2	4.221	V	VREG = 4.2V，TJ = -40°C - 85°C	9
Charge voltage accuracy VREG = 4.35V	VREG_ACC	4.329	4.35	4.371	V	VREG = 4.35V，TJ = -40°C - 85°C	9
Charge voltage accuracy VREG = 4.45V	VREG_ACC	4.428	4.45	4.472	V	VREG = 4.45V，TJ = -40°C - 85°C	9
Fast charge current accuracy ICHG = 0.24A	ICHG_ACC	0.216	0.24	0.264	A	ICHG = 0.24A，VBAT = 3.1V 或 3.8V，TJ = -40°C - 85°C	9
Fast charge current accuracy ICHG = 0.72A	ICHG_ACC	0.6768	0.72	0.7632	A	ICHG = 0.72A，VBAT = 3.1V 或 3.8V，TJ = -40°C - 85°C	9
Fast charge current accuracy ICHG = 1.50A	ICHG_ACC	1.41	1.5	1.59	A	ICHG = 1.50A，VBAT = 3.1V 或 3.8V，TJ = -40°C - 85°C	9
Precharge current accuracy	IPRECHG_ACC	28	40	52	mA	VBAT = 2.6V，IPRECHG = 40mA	9
Termination current accuracy	ITERM_ACC	10	20	30	mA	ITERM = 20mA，ICHG < 260mA，VREG = 4.35V，TJ = 0°C - 85°C	9
Battery LOWV rising threshold to start fast charge	VBATLOWV	3	3.12	3.24	V	开始快速充电的电池 LOWV 上升阈值，VBAT 上升	10
Battery recharge threshold	VRECHG	90	120	150	mV	VRECHG = 0，VBAT 下降（默认值）	10
Battery FET on-resistance TJ = -40°C - 85°C	RON_BATFET	19.5		26	mΩ	TJ = -40°C - 85°C	10
Battery overvoltage rising threshold (percent of VREG)	VBAT_OVP	103	104	105	%	VBAT 上升，以 VREG 的百分比表示	10
Input voltage regulation accuracy (VINDPM)	VINDPM_ACC	4.365	4.5	4.635	V	典型输入电压调节精度	10
Input current regulation accuracy IINDPM = 500mA	IINDPM_ACC	450	465	500	mA	IINDPM = 500mA (TJ = -40°C - 85°C)	10
System discharge load current during SYSOVP	ISYS_LOAD		30		mA	SYSOVP 期间的系统放电负载电流	10
Thermal shutdown rising threshold	TSHUT		150		°C	热关断上升阈值，温度升高	10
PWM switching frequency	FSW	1.32	1.5	1.68	MHz	振荡器频率	11
Maximum PWM duty cycle	DMAX			97	%	最大 PWM 占空比	11
REGN LDO output voltage VVBUS = 5V	VREGN	4.58	4.7	4.8	V	VVBUS = 5V，IREGN = 20mA	11
I2C SCL clock frequency	fSCL		400		kHz		12
Fast charge safety timer accuracy CHG_TIMER = 20hr	tSAFETY	17	20	24	hr	快速充电安全计时器精度，CHG_TIMER = 20hr	12
Watchdog reset time (REG05[5:4] = 160s)	tWDT		160		s	WATCHDOG REG05[5:4] = 160s	12
Thermal resistance junction-to-ambient (JEDEC)	RθJA		35.6		°C/W	RTW (WQFN) 24 引脚，JEDEC	8
Thermal resistance junction-to-case (top)	RθJC(top)		22.7		°C/W	RTW (WQFN) 24 引脚	8
Thermal resistance junction-to-board	RθJB		11.9		°C/W	RTW (WQFN) 24 引脚	8
Thermal resistance junction-to-case (bottom)	RθJC(bot)		2.6		°C/W	RTW (WQFN) 24 引脚	8
RBFET on-resistance (BQ25619E)	RON_RBFET		45		mΩ	阻断 FET 导通电阻 (BQ25619E)	9
HSFET on-resistance (BQ25619E)	RON_HSFET		62		mΩ	高侧开关 FET 导通电阻 (BQ25619E)	9
LSFET on-resistance (BQ25619E)	RON_LSFET		71		mΩ	低侧开关 FET 导通电阻 (BQ25619E)	9

CAD (KiCad official)

Symbol: BQ25619ERTWR
Footprint: Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm
3D model: WQFN-24(4x4) (KiCad packages3D, STEP)
3D model files: bq25619ertwr-etched.step / bq25619ertwr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq25619ertwr.step / bq25619ertwr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (64 pp, sha256 19f9af0505f17f92, retrieved 2026-11-07, tier: lcsc)
Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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BQ25619ERTWR

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