component
BQ25303JRTER
Public Made by Adomby adom
Texas Instruments Battery Management ICs, WQFN-16-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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"title": "BQ25303JRTER",
"brief": "Texas Instruments Battery Management ICs, WQFN-16-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
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"manufacturer": "Texas Instruments",
"package": "WQFN-16-EP(3x3)",
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"category": "Power Supply Chip",
"subcategory": "Battery Management ICs",
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"pins": [
{
"number": "1",
"name": "VBUS",
"type": "power_in",
"description": "Charger input voltage with the input reverse-blocking MOSFET (RBFET) between VBUS and PMID; place a 2.2uF ceramic capacitor from VBUS to GND as close to the IC as possible."
},
{
"number": "2",
"name": "REGN",
"type": "power_out",
"description": "Low-side FET driver positive supply output; connect a 2.2uF ceramic capacitor from REGN to GND placed close to the IC."
},
{
"number": "3",
"name": "STAT",
"type": "output",
"description": "Open-drain charge status output connected to REGN through a current-limiting resistor and LED: low while charging, open when charge is complete or disabled via EN, blinking on a fault."
},
{
"number": "4",
"name": "ICHG",
"type": "input",
"description": "Charge current program input; connect a 1% resistor RICHG to GND to set ICHG = KICHG/RICHG (KICHG = 40,000), no capacitor allowed, and charging stops with STAT blinking if the pin is shorted to GND or open."
},
{
"number": "5",
"name": "POL",
"type": "input",
"description": "EN pin polarity select: floating gives active-low enable, grounded gives active-high enable."
},
{
"number": "6",
"name": "EN",
"type": "input",
"description": "Device disable input: with POL floating the device is enabled when EN is floating or low and disabled when EN is high; with POL grounded it is enabled when EN is high and disabled when EN is low or floating."
},
{
"number": "7",
"name": "TS",
"type": "input",
"description": "Battery temperature voltage input for an NTC thermistor (103AT-2 recommended) with divider resistors REGN-TS and TS-GND, and charging is suspended when TS voltage is out of range; if unused connect 10kΩ from REGN to TS and 10kΩ from TS to GND."
},
{
"number": "8",
"name": "NC",
"type": "unconnected",
"description": "No connect; leave floating or connect to ground."
},
{
"number": "9",
"name": "VSET",
"type": "input",
"description": "Battery charge voltage set input programmed by a pull-down resistor to GND: floating (>200kΩ) 4.1V, shorted to GND (<510Ω) 4.2V, 51kΩ 4.35V, 10kΩ 4.4V, with maximum capacitance of 50pF."
},
{
"number": "10",
"name": "BAT",
"type": "input",
"description": "Battery voltage sense input connected to the battery pack positive terminal and inductor output node, with a 10µF capacitor recommended."
},
{
"number": "11",
"name": "GND",
"type": "power_in",
"description": "Ground; connect directly to the thermal pad on the top layer, with a single-point connection between power ground and analog ground near the IC GND pin recommended."
},
{
"number": "12",
"name": "GND",
"type": "power_in",
"description": "Ground; connect directly to the thermal pad on the top layer, with a single-point connection between power ground and analog ground near the IC GND pin recommended."
},
{
"number": "13",
"name": "SW",
"type": "passive",
"description": "Switching node connected to the output inductor, internally the source of the N-channel HSFET and drain of the LSFET; connect a 0.047µF bootstrap capacitor between SW and BTST."
},
{
"number": "14",
"name": "SW",
"type": "passive",
"description": "Switching node connected to the output inductor, internally the source of the N-channel HSFET and drain of the LSFET; connect a 0.047µF bootstrap capacitor between SW and BTST."
},
{
"number": "15",
"name": "BTST",
"type": "passive",
"description": "High-side FET driver supply, internally connected to the cathode of the bootstrap diode; connect a 0.047µF bootstrap capacitor between SW and BTST."
},
{
"number": "16",
"name": "PMID",
"type": "passive",
"description": "Connection to the drain of the reverse-blocking MOSFET (RBFET) and the drain of the high-side MOSFET (HSFET); place a 10µF ceramic capacitor from PMID to GND as close to the IC as possible."
},
{
"number": "17",
"name": "Thermal Pad",
"type": "power_in",
"description": "Ground reference and thermal pad for heat conduction, to be connected externally to the ground plane through vias under the pad."
}
],
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"pages_sent": 38,
"cost_usd": 0.2721,
"at": "2026-10-22T05:06:57"
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"metadata": {
"specs": {
"Manufacturer": "Texas Instruments",
"Package": "WQFN-16-EP(3x3)",
"Category": "Power Supply Chip",
"Pins": "17"
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"characteristics": {
"version": 1,
"source": "datasheet",
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"rows": [
{
"name": "VBUS reverse current from BAT/SW",
"symbol": "IVBUS_REVS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": 0.07,
"max": 3,
"conditions": "VBAT = VSW = 4.5V, VBUS shorted to GND, TJ = -40°C to 85°C",
"source_page": 8,
"source": "datasheet"
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{
"name": "VBUS leakage in disable mode",
"symbol": "IQ_VBUS_DIS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": 3.5,
"max": 4.25,
"conditions": "VBUS = 5V, VBAT = 4V, charger disabled, /EN high, TJ = -40°C to 85°C",
"source_page": 8,
"source": "datasheet"
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{
"name": "BAT and SW leakage in HiZ mode",
"symbol": "IQ_BAT_HIZ",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": 0.17,
"max": 1,
"conditions": "VBAT = VSW = 4.5V, VBUS floating, TJ = -40°C to 65°C",
"source_page": 8,
"source": "datasheet"
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{
"name": "VBUS operating range",
"symbol": "VVBUS_OP",
"kind": "electrical",
"unit": "V",
"min": 4.1,
"typ": null,
"max": 17,
"conditions": "",
"source_page": 8,
"source": "datasheet"
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{
"name": "VBUS power-on reset",
"symbol": "VVBUS_UVLOZ",
"kind": "electrical",
"unit": "V",
"min": 3,
"typ": null,
"max": 3.8,
"conditions": "VBUS rising",
"source_page": 8,
"source": "datasheet"
},
{
"name": "VBUS to turn on REGN",
"symbol": "VVBUS_LOWV",
"kind": "electrical",
"unit": "V",
"min": 3.8,
"typ": 3.9,
"max": 4,
"conditions": "VBUS rising, REGN on, VBAT = 3.2V",
"source_page": 8,
"source": "datasheet"
},
{
"name": "Enter sleep mode threshold",
"symbol": "VSLEEP",
"kind": "electrical",
"unit": "mV",
"min": 30,
"typ": 60,
"max": 100,
"conditions": "VBUS falling, VBUS - VBAT, VVBUS_LOWV < VBAT < VBATREG",
"source_page": 8,
"source": "datasheet"
},
{
"name": "Exit sleep mode threshold",
"symbol": "VSLEEPZ",
"kind": "electrical",
"unit": "mV",
"min": 110,
"typ": 157,
"max": 295,
"conditions": "VBUS rising, VBUS - VBAT, VVBUS_LOWV < VBAT < VBATREG",
"source_page": 8,
"source": "datasheet"
},
{
"name": "VBUS overvoltage rising threshold",
"symbol": "VVBUS_OVP_RISE",
"kind": "electrical",
"unit": "V",
"min": 17,
"typ": 17.4,
"max": 17.8,
"conditions": "VBUS rising, converter stops switching",
"source_page": 8,
"source": "datasheet"
},
{
"name": "Blocking MOSFET on-resistance (Q1)",
"symbol": "RDSON_Q1",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 40,
"max": 65,
"conditions": "VREGN = 5V",
"source_page": 8,
"source": "datasheet"
},
{
"name": "High-side MOSFET on-resistance (Q2)",
"symbol": "RDSON_Q2",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 50,
"max": 82,
"conditions": "VREGN = 5V",
"source_page": 8,
"source": "datasheet"
},
{
"name": "Low-side MOSFET on-resistance (Q3)",
"symbol": "RDSON_Q3",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 45,
"max": 72,
"conditions": "VREGN = 5V",
"source_page": 8,
"source": "datasheet"
},
{
"name": "Charge voltage regulation, VSET floating",
"symbol": "VBATREG",
"kind": "electrical",
"unit": "V",
"min": 4.08,
"typ": 4.1,
"max": 4.12,
"conditions": "VSET pin floating, TJ = -40°C to +85°C",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Charge voltage regulation, VSET 51kΩ",
"symbol": "VBATREG",
"kind": "electrical",
"unit": "V",
"min": 4.328,
"typ": 4.35,
"max": 4.371,
"conditions": "VSET pin with 51kΩ resistor, TJ = -40°C to +85°C",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Charge voltage regulation, VSET 10kΩ",
"symbol": "VBATREG",
"kind": "electrical",
"unit": "V",
"min": 4.378,
"typ": 4.4,
"max": 4.422,
"conditions": "VSET pin with 10kΩ resistor, TJ = -40°C to +85°C",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Charge voltage regulation, VSET grounded",
"symbol": "VBATREG",
"kind": "electrical",
"unit": "V",
"min": 4.179,
"typ": 4.2,
"max": 4.221,
"conditions": "VSET pin grounded, TJ = -40°C to +85°C",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Charge current regulation 1.72A",
"symbol": "ICHG",
"kind": "electrical",
"unit": "A",
"min": 1.55,
"typ": 1.72,
"max": 1.89,
"conditions": "ICHG set to 1.72A, RICHG = 23.2kΩ",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Charge current regulation 1.0A",
"symbol": "ICHG",
"kind": "electrical",
"unit": "A",
"min": 0.9,
"typ": 1,
"max": 1.1,
"conditions": "ICHG set to 1.0A, RICHG = 40.2kΩ",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Charge current regulation 0.5A",
"symbol": "ICHG",
"kind": "electrical",
"unit": "A",
"min": 0.4,
"typ": 0.5,
"max": 0.6,
"conditions": "ICHG set to 0.5A, RICHG = 78.7kΩ",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Termination current 1.72A",
"symbol": "ITERM",
"kind": "electrical",
"unit": "mA",
"min": 138,
"typ": 172,
"max": 206,
"conditions": "ICHG = 1.72A, 10% of ICHG, RICHG = 23.2kΩ",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Termination current 1.0A",
"symbol": "ITERM",
"kind": "electrical",
"unit": "mA",
"min": 70,
"typ": 100,
"max": 130,
"conditions": "ICHG = 1.0A, 10% of ICHG, RICHG = 40.2kΩ",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Termination current 0.5A",
"symbol": "ITERM",
"kind": "electrical",
"unit": "mA",
"min": 33,
"typ": 63,
"max": 93,
"conditions": "ICHG = 0.5A, ITERM = 63mA, RICHG = 78.7kΩ",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Precharge current 1.72A",
"symbol": "IPRECHG",
"kind": "electrical",
"unit": "mA",
"min": 115,
"typ": 172,
"max": 225,
"conditions": "ICHG = 1.72A, 10% of ICHG, RICHG = 23.2kΩ",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Precharge current 1.0A",
"symbol": "IPRECHG",
"kind": "electrical",
"unit": "mA",
"min": 50,
"typ": 100,
"max": 150,
"conditions": "ICHG = 1.0A, 10% of ICHG, RICHG = 40.2kΩ",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Precharge current 0.5A",
"symbol": "IPRECHG",
"kind": "electrical",
"unit": "mA",
"min": 28,
"typ": 63,
"max": 98,
"conditions": "ICHG = 0.5A, RICHG = 78.7kΩ",
"source_page": 9,
"source": "datasheet"
},
{
"name": "VBAT short rising threshold",
"symbol": "VBAT_SHORT_RISE",
"kind": "electrical",
"unit": "V",
"min": 2.05,
"typ": 2.2,
"max": 2.35,
"conditions": "Short to precharge",
"source_page": 9,
"source": "datasheet"
},
{
"name": "VBAT short falling threshold",
"symbol": "VBAT_SHORT_FALL",
"kind": "electrical",
"unit": "V",
"min": 1.85,
"typ": 2,
"max": 2.15,
"conditions": "Precharge to short",
"source_page": 9,
"source": "datasheet"
},
{
"name": "Battery short current",
"symbol": "IBAT_SHORT",
"kind": "electrical",
"unit": "mA",
"min": 25,
"typ": 35,
"max": 46,
"conditions": "VBAT < VBAT_SHORT_FALL",
"source_page": 9,
"source": "datasheet"
},
{
"name": "VBAT_LOWV rising threshold",
"symbol": "VBAT_LOWV_RISE",
"kind": "electrical",
"unit": "V",
"min": 2.9,
"typ": 3,
"max": 3.1,
"conditions": "Precharge to fast charge",
"source_page": 9,
"source": "datasheet"
},
{
"name": "VBAT_LOWV falling threshold",
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