BQ25303JRTER

{
  "slug": "bq25303jrter",
  "version": "0.1.0",
  "type": "component",
  "description": "Texas Instruments Battery Management ICs, WQFN-16-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
    "component",
    "power supply chip",
    "bq25303jrter",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "bq25303jrter.kicad_sym",
    "bq25303jrter.kicad_mod",
    "bq25303jrter.glb",
    "bq25303jrter.step",
    "bq25303jrter.lbr",
    "docs/hero.png",
    "docs/bq25303jrter-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "bq25303jrter-hero.glb",
    "bq25303jrter-hero.overlay.json",
    "bq25303jrter-etched.glb"
  ],
  "component": {
    "mpn": "BQ25303JRTER",
    "manufacturer": "Texas Instruments",
    "package": "WQFN-16-EP(3x3)",
    "pin_count": 17,
    "category": "Power Supply Chip",
    "subcategory": "Battery Management ICs",
    "datasheet": "https://www.ti.com/cn/lit/gpn/bq25303j",
    "parts": {
      "symbol": "bq25303jrter.kicad_sym",
      "footprint": "bq25303jrter.kicad_mod",
      "model_3d": "bq25303jrter-hero.glb",
      "model_3d_plain": "bq25303jrter-etched.glb",
      "model_3d_step": "bq25303jrter-etched.step",
      "model_3d_step_plain": "bq25303jrter.step",
      "lbr": "bq25303jrter.lbr"
    },
    "distributor_links": {
      "lcsc": "C2842775",
      "digikey": "296-BQ25303JRTERTR-ND",
      "mouser": "595-BQ25303JRTER"
    },
    "distributor_check": {
      "checked_at": "2026-10-22T05:09:08Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "296-BQ25303JRTERTR-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "595-BQ25303JRTER",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "VBUS",
        "type": "power_in",
        "description": "Charger input voltage with the input reverse-blocking MOSFET (RBFET) between VBUS and PMID; place a 2.2uF ceramic capacitor from VBUS to GND as close to the IC as possible."
      },
      {
        "number": "2",
        "name": "REGN",
        "type": "power_out",
        "description": "Low-side FET driver positive supply output; connect a 2.2uF ceramic capacitor from REGN to GND placed close to the IC."
      },
      {
        "number": "3",
        "name": "STAT",
        "type": "output",
        "description": "Open-drain charge status output connected to REGN through a current-limiting resistor and LED: low while charging, open when charge is complete or disabled via EN, blinking on a fault."
      },
      {
        "number": "4",
        "name": "ICHG",
        "type": "input",
        "description": "Charge current program input; connect a 1% resistor RICHG to GND to set ICHG = KICHG/RICHG (KICHG = 40,000), no capacitor allowed, and charging stops with STAT blinking if the pin is shorted to GND or open."
      },
      {
        "number": "5",
        "name": "POL",
        "type": "input",
        "description": "EN pin polarity select: floating gives active-low enable, grounded gives active-high enable."
      },
      {
        "number": "6",
        "name": "EN",
        "type": "input",
        "description": "Device disable input: with POL floating the device is enabled when EN is floating or low and disabled when EN is high; with POL grounded it is enabled when EN is high and disabled when EN is low or floating."
      },
      {
        "number": "7",
        "name": "TS",
        "type": "input",
        "description": "Battery temperature voltage input for an NTC thermistor (103AT-2 recommended) with divider resistors REGN-TS and TS-GND, and charging is suspended when TS voltage is out of range; if unused connect 10kΩ from REGN to TS and 10kΩ from TS to GND."
      },
      {
        "number": "8",
        "name": "NC",
        "type": "unconnected",
        "description": "No connect; leave floating or connect to ground."
      },
      {
        "number": "9",
        "name": "VSET",
        "type": "input",
        "description": "Battery charge voltage set input programmed by a pull-down resistor to GND: floating (>200kΩ) 4.1V, shorted to GND (<510Ω) 4.2V, 51kΩ 4.35V, 10kΩ 4.4V, with maximum capacitance of 50pF."
      },
      {
        "number": "10",
        "name": "BAT",
        "type": "input",
        "description": "Battery voltage sense input connected to the battery pack positive terminal and inductor output node, with a 10µF capacitor recommended."
      },
      {
        "number": "11",
        "name": "GND",
        "type": "power_in",
        "description": "Ground; connect directly to the thermal pad on the top layer, with a single-point connection between power ground and analog ground near the IC GND pin recommended."
      },
      {
        "number": "12",
        "name": "GND",
        "type": "power_in",
        "description": "Ground; connect directly to the thermal pad on the top layer, with a single-point connection between power ground and analog ground near the IC GND pin recommended."
      },
      {
        "number": "13",
        "name": "SW",
        "type": "passive",
        "description": "Switching node connected to the output inductor, internally the source of the N-channel HSFET and drain of the LSFET; connect a 0.047µF bootstrap capacitor between SW and BTST."
      },
      {
        "number": "14",
        "name": "SW",
        "type": "passive",
        "description": "Switching node connected to the output inductor, internally the source of the N-channel HSFET and drain of the LSFET; connect a 0.047µF bootstrap capacitor between SW and BTST."
      },
      {
        "number": "15",
        "name": "BTST",
        "type": "passive",
        "description": "High-side FET driver supply, internally connected to the cathode of the bootstrap diode; connect a 0.047µF bootstrap capacitor between SW and BTST."
      },
      {
        "number": "16",
        "name": "PMID",
        "type": "passive",
        "description": "Connection to the drain of the reverse-blocking MOSFET (RBFET) and the drain of the high-side MOSFET (HSFET); place a 10µF ceramic capacitor from PMID to GND as close to the IC as possible."
      },
      {
        "number": "17",
        "name": "Thermal Pad",
        "type": "power_in",
        "description": "Ground reference and thermal pad for heat conduction, to be connected externally to the ground plane through vias under the pad."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin types are inferred from the datasheet's I/O codes (P, AI, AO) and descriptions; the datasheet do; The datasheet text is the Chinese translation; descriptions were written from it. Thermal pad is num"
        ],
        "pages_sent": 38,
        "cost_usd": 0.2721,
        "at": "2026-10-22T05:06:57"
      },
      "datasheet": {
        "url": "https://www.ti.com/cn/lit/gpn/bq25303j",
        "pages": 38,
        "sha256": "480dd7d29c5b6011",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 17,
        "described": 17,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "bq25303jrter.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          3.0,
          3.0,
          0.785
        ],
        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "3eb81ffac423a66cdcfead8efe56401da171edaf1f2257049aad7b2d3900f6c8",
        "checked": "2026-10-22",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "bq25303jrter-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        ],
        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "7202ac24cadfc84094c072ef51c1687efb8eccab135802d17833d43b1d55dab8",
        "checked": "2026-10-22",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  }
}