component
BQ24735RGRR
Public Made by Adomby adom
Texas Instruments Battery Management, VQFN-20(3.5x3.5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads on click. Unloads only if this page sits in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads on click. Unloads only if this page sits in the background.
PCB Footprint
Open full view ↗Loads on click. Unloads only if this page sits in the background.
Datasheet
Open in new tab ↗Loads on click. Unloads only if this page sits in the background.
README
markdownBQ24735RGRR
Texas Instruments · Battery Management · VQFN-20(3.5x3.5)
BQ24735RGRR from Texas Instruments, in a VQFN-20(3.5x3.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ACN | input | Input current sense resistor negative input; place an optional 0.1µF ceramic capacitor from ACN to GND for common-mode filtering and a 0.1µF ceramic capacitor from ACN to ACP for differential-mode filtering; common-mode range 4.5V to 24V. |
| 2 | ACP | input | Input current sense resistor positive input; place a 0.1µF ceramic capacitor from ACP to GND for common-mode filtering and a 0.1µF ceramic capacitor from ACN to ACP for differential-mode filtering; common-mode range 4.5V to 24V. |
| 3 | CMSRC | input | ACDRV charge pump source input; connect to the common source of ACFET (Q1) and RBFET (Q2) through a 4kΩ series resistor to limit in-rush current; sets the reference for the 6V ACDRV gate overdrive. |
| 4 | ACDRV | output | Charge pump output driving the adapter NMOS selector (ACFET) and reverse-blocking NMOS (RBFET); outputs VCMSRC + 6V when ACDET is 2.4V-3.15V and VCC is above UVLO; place a 4kΩ series resistor to limit in-rush current; minimum load resistance 500kΩ, turn-off resistance 5kΩ-7.4kΩ. |
| 5 | ACOK | tri_state | AC adapter detection open-drain output; pulled HIGH by external pull-up when ACDET is 2.4V-3.15V, VCC > UVLO, and VCC is ≥275mV above SRN; pulled LOW internally otherwise; ACOK rising deglitch 150ms (first insertion) or 1.3s (default subsequent); output saturation voltage ≤500mV at 5mA. |
| 6 | ACDET | input | Adapter detection analog input; program the valid adapter threshold with an external resistor divider from adapter input to GND; ACOK rising threshold 2.4V, ACOVP threshold 3.15V; when above 0.6V and VCC > UVLO, REGN LDO, ACOK comparator, and IOUT become active. |
| 7 | IOUT | output | Buffered current sense amplifier output selectable between adapter current (ACP-ACN) or charge current (SRP-SRN) via SMBus ChargeOption() bit[5]; output equals 20× the differential sense voltage; output range 0V-3.3V, max output current 1mA, max load capacitance 100pF. |
| 8 | SDA | bidirectional | SMBus open-drain data I/O; connect to SMBus data line with a 10kΩ pull-up resistor; input low threshold 0.8V, input high threshold 2.1V; output saturation voltage ≤500mV at 5mA; supports 10kHz-100kHz clock. |
| 9 | SCL | input | SMBus open-drain clock input; connect to SMBus clock line with a 10kΩ pull-up resistor; input low threshold 0.8V, input high threshold 2.1V; supports 10kHz-100kHz clock frequency. |
| 10 | ILIM | input | Charge current limit analog input; program with a resistor divider from 3.3V rail to GND; the lower of ILIM or the charge current DAC sets the regulation limit; charge disabled when VILIM < 75mV (CE falling threshold), charge enabled when VILIM > 105mV (CE rising threshold); to disable ILIM control pull above 1.6V. |
| 11 | BATDRV | output | Charge pump output driving the battery-to-system NMOS (BATFET); outputs VSRN + 6V to turn on BATFET and VSRN to turn off BATFET; charge pump current limit 40µA-60µA; place a 4kΩ series resistor to limit in-rush current; minimum load resistance 500kΩ. |
| 12 | SRN | input | Charge current sense resistor negative input and battery voltage sense; connect through a 7.5Ω series resistor then to GND via 0.1µF for common-mode filtering and across sense resistor via 0.1µF for differential filtering; output common-mode range 0V-19.2V. |
| 13 | SRP | input | Charge current sense resistor positive input; connect through a 10Ω series resistor to the sense resistor; place a 0.1µF capacitor between SRP and SRN for differential filtering; SRP capacitance must not exceed 0.1µF for correct cycle-by-cycle OCP detection. |
| 14 | GND | power_in | IC analog ground; on PCB connect to analog ground plane and connect to power ground plane only through the exposed PowerPad beneath the IC. |
| 15 | LODRV | output | Low-side synchronous power MOSFET gate driver output; connect to low-side n-channel MOSFET gate; turn-on resistance 7.5Ω typ / 12Ω max at VREGN = 6V, 10mA; turn-off resistance 0.9Ω typ / 1.4Ω max; dead time from high side to low side 20ns. |
| 16 | REGN | power_out | Internal 6V linear regulator output supplied from VCC; regulates to 5.5V-6.5V when VCC > 6.5V and ACDET > 0.6V; current limit 50mA typ (75mA max) during charge; connect a 1µF ceramic capacitor to GND for stability. |
| 17 | BTST | passive | High-side MOSFET gate driver bootstrap supply; connect a 0.047µF ceramic capacitor from BTST to PHASE and an external Schottky bootstrap diode from REGN to BTST; a low-side refresh pulse is triggered when VBTST-VPHASE falls below 4.3V typ. |
| 18 | HIDRV | output | High-side synchronous power MOSFET gate driver output; connect to high-side n-channel MOSFET gate; turn-on resistance 6Ω typ / 10Ω max at VBTST-VPHASE = 5.5V, 10mA; turn-off resistance 0.65Ω typ / 1.3Ω max; dead time from low side to high side 20ns. |
| 19 | PHASE | passive | High-side MOSFET driver source and PWM switching node; connect to the source of the high-side n-channel MOSFET; voltage range −2V to 24V (recommended operating); low-side short-circuit protection monitored between PHASE and GND. |
| 20 | VCC | power_in | Input supply pin; diode-OR connection from AC adapter or battery; operating range 4.5V to 24V; UVLO rising threshold 3.5V-4V, falling hysteresis 340mV; use a 10Ω resistor and 1µF capacitor to GND as a low-pass filter to limit inrush current. |
| 21 | PowerPAD | power_in | Exposed thermal and ground pad beneath the IC; analog ground and power ground are star-connected at this pad; must always be soldered to the PCB with thermal vias to analog and power ground planes; θJCbot = 4.4°C/W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | VQFN-20(3.5x3.5) |
| Category | Power Management (PMIC) |
| Pins | 21 |
CAD (KiCad official)
- Symbol:
BQ24735RGRR - Footprint:
Package_DFN_QFN:QFN-20-1EP_3.5x3.5mm_P0.5mm_EP2x2mm - 3D model: VQFN-20(3.5x3.5), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
bq24735rgrr-etched.step/bq24735rgrr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bq24735rgrr.step/bq24735rgrr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (45 pp, sha256
49d4e7a43dd79779, retrieved 2026-10-01, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).