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BQ24381DSGT

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Texas Instruments Battery Management ICs, WSON-8-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BQ24381DSGT

Texas Instruments · Battery Management ICs · WSON-8-EP(2x2)

BQ24381DSGT from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN power_in Input power connected to the external DC supply (absolute max 30 V); bypass IN to VSS with a ceramic capacitor of 1 μF minimum.
2 VSS power_in Ground terminal; connect to the thermal pad and to the ground rail of the circuit, and it must be connected to ground at all times.
3 NC unconnected Do not connect to any external circuits; these pins may have internal connections used for test purposes.
4 FAULT output Open-drain status output pulled to VSS internally when the pass FET is off due to input overvoltage, output short circuit, overtemperature or battery voltage outside safe limits, and high impedance during normal operation.
5 CE input Active-low chip enable input with an internal pull-down of approximately 200 kΩ; CE high turns the pass FET off and CE low turns it on.
6 VBAT power_in Battery voltage sense input connected to the pack positive terminal through a 100-kΩ resistor.
7 NC unconnected Do not connect to any external circuits; these pins may have internal connections used for test purposes.
8 OUT power_out Output terminal to the charging system; bypass OUT to VSS with a ceramic capacitor of 1 μF minimum.
9 PAD passive Exposed thermal pad internally connected to VSS; it must be connected to the same potential as VSS on the PCB and not used as the primary ground input.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-8-EP(2x2)
Category Power Supply Chip
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
IN voltage VI -0.3 30 V IN with respect to VSS 4
OUT voltage VI -0.3 12 V OUT with respect to VSS 4
FAULT, CE, VBAT voltage VI -0.3 7 V with respect to VSS 4
Output source current IOUTmax 2 A OUT 4
Output sink current 15 mA FAULT 4
Junction temperature TJ -40 150 °C 4
Storage temperature Tstg -65 150 °C 4
ESD HBM V(ESD) -2000 2000 V Human-body model, ANSI/ESDA/JEDEC JS-001 4
ESD CDM V(ESD) -500 500 V Charged-device model, JESD22-C101 4
IN voltage range VI 3.3 30 V 4
Output current, OUT pin IO 1.7 A 4
Junction temperature TJ -40 125 °C 4
Junction-to-ambient thermal resistance RθJA 64 °C/W DSG (WSON) 8 pins 4
Junction-to-case (top) thermal resistance RθJC(top) 84.1 °C/W DSG (WSON) 8 pins 4
Junction-to-board thermal resistance RθJB 33.9 °C/W DSG (WSON) 8 pins 4
Junction-to-top characterization parameter ψJT 1.9 °C/W 4
Junction-to-board characterization parameter ψJB 34.3 °C/W 4
Junction-to-case (bottom) thermal resistance RθJC(bot) 5.8 °C/W 4
UVLO input power detected threshold UVLO 2.5 2.8 V CE = LO or HI, VIN: 0 V → 3 V 5
Hysteresis on UVLO Vhys(UVLO) 200 300 mV CE = LO or HI, VIN: 3 V → 0 V 5
Operating current IDD 300 μA CE = LO, no load on OUT pin, VIN = 5 V, bq24381 5
Standby current ISTDBY 100 μA CE = HI, VIN = 5.5 V 5
Dropout voltage IN to OUT VDO 280 mV CE = LO, VIN = 5 V, I(OUT) = 1 A 5
Q1 off-state leakage current IOFF 10 μA CE = HI, VIN = 5.5 V 5
Output voltage VO(REG) 4.8 5 5.2 V CE = LO, VIN = 6 V, bq24381 5
Input overvoltage protection threshold VOVP 6.88 7.1 7.31 V CE = LO, VIN: 5 V → 8 V 5
Hysteresis on OVP Vhys(OVP) 25 120 mV CE = LO or HI, VIN: 7 V → 5 V 5
Short-circuit detection threshold IO(SC) 1.3 1.5 1.7 A 3 V < VIN < VOVP - Vhys(OVP) 5
Retry interval if short-circuit detected tREC(SC) 64 ms 5
Battery overvoltage protection threshold BVOVP 4.3 4.35 4.4 V VIN > 4.5 V, CE = LO 5
Hysteresis on BV(OVP) Vhys(BVovp) 200 320 mV VIN > 4.5 V, CE = LO 5
Input bias current on VBAT pin I(VBAT) 10 nA TJ = 25°C 5
Thermal shutdown temperature TJ(OFF) 140 150 °C 5
Thermal shutdown hysteresis TJ(OFF-HYS) 20 °C 5
Logic LOW input voltage CE VIL 0 0.4 V 5
Logic HIGH input voltage CE VIH 1.4 V 5
CE input low current IIL 1 μA 5
CE input high current IIH 15 μA V CE = 1.8 V 5
FAULT output LOW voltage VOL 0.2 V ISINK = 5 mA 5
FAULT off-state leakage current, HI-Z Ilkg 10 μA V FAULT = 5 V 5
Deglitch time, input power detected tDGL(PGOOD) 8 ms CE = LO or HI, VIN 0 V → 5 V, 1-μs rise-time 6
Input OV propagation delay tPD(OVP) 200 ns VIN: 5 V → 10 V; not tested, specified by design 6
Recovery time from input overvoltage condition tREC(OVP) 8 ms CE = LO, VIN: 7 V → 5 V, 1-μs fall-time 6
Deglitch time, battery overvoltage detected tDGL(BVovp) 176 μs VIN > 4.5 V, CE = LO, VBAT rising from 4.1 V to 4.4 V to FAULT going low 6

CAD (KiCad official)

  • Symbol: BQ24381DSGT
  • Footprint: Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm
  • 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: bq24381dsgt-etched.step / bq24381dsgt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bq24381dsgt.step / bq24381dsgt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (25 pp, sha256 68b98db1e60807c1, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF