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BLP05N08G-B

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BL Shanghai Belling MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BLP05N08G-B

BL Shanghai Belling · MOSFETs · TO-263

BLP05N08G-B from BL Shanghai Belling, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS limited to ±20 V and a threshold of 2.0 to 4.0 V at ID=250µA.
2 D passive Drain, also the exposed tab; VDSS is 85 V and continuous current is 120 A (package limited).
3 S passive Source; continuous source (body-diode) current is 120 A and pulsed current is 480 A.

Key specifications

Parameter Value
Manufacturer BL Shanghai Belling
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 85 V TC=25°C 2
Continuous Drain Current, Silicon Limited ID 138 A TC=25°C 2
Continuous Drain Current, Package Limited ID 120 A TC=25°C 2
Continuous Drain Current, Silicon Limited ID 87.4 A TC=100°C 2
Pulsed Drain Current IDM 480 A Note1: pulse width limited by max junction temperature 2
Gate-Source Voltage VGS -20 20 V TC=25°C 2
Avalanche Energy EAS 156 mJ Note2: L=0.5mH, Ias=25A, Start TJ=25°C 2
Power Dissipation PD 173.6 W TC=25°C 2
Operating Junction and Storage Temperature Range TJ，Tstg -55 150 ℃ 2
Maximum Temperature for Soldering TL 260 ℃ 2
Thermal resistance, Junction-Case RθJC 0.72 ℃/W 2
Thermal resistance, Junction-Ambient RθJA 62.5 ℃/W 2
Drain-Source Breakdown Voltage VDSS 85 V VGS=0V, ID=250µA 2
Drain-Source Leakage Current IDSS 1 µA VDS=85V, VGS=0V 2
Drain-Source Leakage Current IDSS 100 µA VDS=68V, VGS=0V, @TC=125°C 2
Gate-Source Forward Leakage IGSS(F) 100 nA VGS=+20V 2
Gate-Source Reverse Leakage IGSS(R) -100 nA VGS=-20V 2
Drain-Source On-Resistance RDS(on) 4.4 5 mΩ VGS=10V, ID=50A 3
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS, ID=250µA 3
Continuous Source Current IS 120 A 3
Maximum Pulsed Current ISM 480 A 3
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=50A 3

CAD (KiCad official)

  • Symbol: BLP05N08G-B
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: blp05n08g-b-etched.step / blp05n08g-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); blp05n08g-b.step / blp05n08g-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BL Shanghai Belling datasheet (12 pp, sha256 97e106559d1c26c8, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF