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BL814B

GME(银河微电) · IC · DIP-4L

BL814B from GME(银河微电), in a DIP-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode/Cathode passive LED input terminal (anode/cathode, AC-input antiparallel LEDs), forward current IF up to ±60 mA with VF typ. 1.2 V at ±20 mA.
2 Cathode/Anode passive LED input terminal (cathode/anode, AC-input antiparallel LEDs), forward current IF up to ±60 mA with VF typ. 1.2 V at ±20 mA.
3 Emitter passive Phototransistor emitter; emitter-collector voltage VECO max 7 V.
4 Collector passive Phototransistor collector; VCEO max 80 V and collector current IC max 50 mA.

Key specifications

Parameter Value
Manufacturer GME(银河微电)
Package DIP-4L
Category
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Current Transfer Ratio (Bank B) CTR 100 300 % IF=±1mA, VCE=5V 3
Forward Voltage VF 1.2 1.4 V IF=±20mA 3
Terminal Capacitance Ct 30 250 pF V=0, f=1kHz 3
Collector-Emitter Dark Current ICEO 100 nA VCE = 20V, IF = 0 3
Collector-Emitter Breakdown Voltage BVCEO 80 V IC = 0.1mA, IF = 0 3
Emitter-Collector Breakdown Voltage BVECO 7 V IE = 10μA, IF = 0 3
Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.2 V IF=±20mA, IC=1mA 3
Floating Capacitance Cf 0.6 1 pF V=0, f=1MHz 3
Rise Time Tr 18 μs VCE=2V, RL=100Ω, IC=2mA 3
Fall Time Tf 18 μs 3
Forward Current IF -60 60 mA 2
Power Dissipation PD 100 mW 2
Output Power Dissipation PC 150 mW 2
Collector Current IC 50 mA 2
Collector-Emitter Voltage VCEO 80 V 2
Emitter-Collector Voltage VECO 7 V 2
Total Power Dissipation PTOT 200 mW 3
Isolation Voltage VISO 5000 Vrms 40 to 60% RH, AC for 1 minute 3
Operating Temperature TOPR -55 110 °C 3
Storage Temperature Range TSTG -55 125 °C 3
Soldering Temperature TSOL 260 °C For 10 seconds 3
Thermal Resistance Junction-Ambient RthJ-A 325 °C/W 2
Thermal Resistance Junction-Case RthJ-C 200 °C/W 2
Cut-off Frequency Fc 80 kHz VCE=5V, IC=2mA, RL=100Ω, -3dB 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BL814B
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4L (KiCad packages3D, STEP)
  • 3D model files: bl814b-etched.step / bl814b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bl814b.step / bl814b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GME(银河微电) datasheet (9 pp, sha256 ab54e7dcddd351ab, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF