component
BGU8052X
Public Made by Adomby adom
NXP Semicon RF Amplifiers, WSON-8-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BGU8052X
NXP Semicon · RF Amplifiers · WSON-8-EP(2x2)
BGU8052X from NXP Semicon, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VBIAS | passive | Bias voltage pin; the bias current is programmed by an external resistor Rbias (5.1 kΩ at VCC = 5 V, 2.3 kΩ at VCC = 3.3 V). |
| 2 | RF_IN | input | RF input of the low noise amplifier, with a 50 Ω characteristic impedance. |
| 3 | n.c. | unconnected | Not connected. |
| 4 | i.c. | unconnected | Internally connected; can be grounded or left open in the application. |
| 5 | i.c. | unconnected | Internally connected; can be grounded or left open in the application. |
| 6 | SHDN | input | Shutdown control: on state at ≤ 0.6 V and off state at ≥ 1.2 V, with an internal pull-down resistor of 20 kΩ; maximum shutdown control voltage is 3 V. |
| 7 | RF_OUT | output | RF output of the low noise amplifier, with a 50 Ω characteristic impedance. |
| 8 | i.c. | unconnected | Internally connected; can be grounded or left open in the application. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NXP Semicon |
| Package | WSON-8-EP(2x2) |
| Category | RF & Radio |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply current, on state | ICC | 36 | 48 | 60 | mA | f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; Rbias = 5.1 kΩ | 5 |
| Associated gain, on state | Gass | 17 | 18.5 | 20 | dB | f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; Rbias = 5.1 kΩ | 5 |
| Noise figure | NF | 0.5 | 0.7 | dB | f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; Rbias = 5.1 kΩ | 5 | |
| Output third-order intercept point | IP3O | 32 | 36 | dBm | 2-tone; tone spacing = 1 MHz; Pi = -15 dBm per tone | 5 | |
| Output third-order intercept point (footnote [2]) | IP3O | 30 | 34 | dBm | 2-tone; tone spacing = 1 MHz; Pi = -15 dBm per tone; footnote [2]: C1 and C2 = 100 pF for fast switching | 5 | |
| Rollett stability factor | K | 1 | both on state and off state up to f = 20 GHz | 5 | |||
| Shutdown control voltage, on state | Vctrl(sd) | 0.6 | V | on state; VCC = 5 V; Tamb = 25 °C; voltage on pin 6 (SHDN) | 5 | ||
| Shutdown control voltage, off state | Vctrl(sd) | 1.2 | V | off state; VCC = 5 V; Tamb = 25 °C; voltage on pin 6 (SHDN) | 5 | ||
| Supply voltage | VCC | 6 | V | - | 4 | ||
| Shutdown control voltage | Vctrl(sd) | 3 | V | - | 4 | ||
| Supply current | ICC | 85 | mA | - | 4 | ||
| Continuous waveform RF input power | Pi(RF)CW | 20 | dBm | continuous waveform | 4 | ||
| Storage temperature | Tstg | -40 | 150 | °C | - | 4 | |
| Junction temperature | Tj | 150 | °C | - | 4 | ||
| Power dissipation | P | 510 | mW | Tcase ≤ 125 °C | 4 | ||
| Electrostatic discharge voltage, HBM | VESD | 1.5 | kV | Human Body Model (HBM) per ANSI/ESDA/JEDEC JS-001-2010 | 4 | ||
| Electrostatic discharge voltage, CDM | VESD | 2 | kV | Charged Device Model (CDM) per JEDEC 22-C101B | 4 | ||
| Supply voltage | VCC | 3.3 | 5 | 5.25 | V | - | 4 |
| Case temperature | Tcase | -40 | 85 | °C | - | 4 | |
| Thermal resistance, junction to case | Rth(j-case) | 50 | K/W | footnotes [1] Case is ground solder pad; [2] measured with infrared technique, device on application board in still air | 4 |
CAD (KiCad official)
- Symbol:
BGU8052X - Footprint:
Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm - 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
- 3D model files:
bgu8052x-etched.step/bgu8052x-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bgu8052x.step/bgu8052x.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NXP Semicon datasheet (16 pp, sha256
2059d8b703fc66b3, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BGU8052X
**NXP Semicon** · RF Amplifiers · WSON-8-EP(2x2)
BGU8052X from NXP Semicon, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VBIAS | passive | Bias voltage pin; the bias current is programmed by an external resistor Rbias (5.1 kΩ at VCC = 5 V, 2.3 kΩ at VCC = 3.3 V). |
| 2 | RF_IN | input | RF input of the low noise amplifier, with a 50 Ω characteristic impedance. |
| 3 | n.c. | unconnected | Not connected. |
| 4 | i.c. | unconnected | Internally connected; can be grounded or left open in the application. |
| 5 | i.c. | unconnected | Internally connected; can be grounded or left open in the application. |
| 6 | SHDN | input | Shutdown control: on state at ≤ 0.6 V and off state at ≥ 1.2 V, with an internal pull-down resistor of 20 kΩ; maximum shutdown control voltage is 3 V. |
| 7 | RF_OUT | output | RF output of the low noise amplifier, with a 50 Ω characteristic impedance. |
| 8 | i.c. | unconnected | Internally connected; can be grounded or left open in the application. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NXP Semicon |
| Package | WSON-8-EP(2x2) |
| Category | RF & Radio |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply current, on state | ICC | 36 | 48 | 60 | mA | f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; Rbias = 5.1 kΩ | 5 |
| Associated gain, on state | Gass | 17 | 18.5 | 20 | dB | f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; Rbias = 5.1 kΩ | 5 |
| Noise figure | NF | | 0.5 | 0.7 | dB | f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; Rbias = 5.1 kΩ | 5 |
| Output third-order intercept point | IP3O | 32 | 36 | | dBm | 2-tone; tone spacing = 1 MHz; Pi = -15 dBm per tone | 5 |
| Output third-order intercept point (footnote [2]) | IP3O | 30 | 34 | | dBm | 2-tone; tone spacing = 1 MHz; Pi = -15 dBm per tone; footnote [2]: C1 and C2 = 100 pF for fast switching | 5 |
| Rollett stability factor | K | 1 | | | | both on state and off state up to f = 20 GHz | 5 |
| Shutdown control voltage, on state | Vctrl(sd) | | | 0.6 | V | on state; VCC = 5 V; Tamb = 25 °C; voltage on pin 6 (SHDN) | 5 |
| Shutdown control voltage, off state | Vctrl(sd) | 1.2 | | | V | off state; VCC = 5 V; Tamb = 25 °C; voltage on pin 6 (SHDN) | 5 |
| Supply voltage | VCC | | | 6 | V | - | 4 |
| Shutdown control voltage | Vctrl(sd) | | | 3 | V | - | 4 |
| Supply current | ICC | | | 85 | mA | - | 4 |
| Continuous waveform RF input power | Pi(RF)CW | | | 20 | dBm | continuous waveform | 4 |
| Storage temperature | Tstg | -40 | | 150 | °C | - | 4 |
| Junction temperature | Tj | | | 150 | °C | - | 4 |
| Power dissipation | P | | | 510 | mW | Tcase ≤ 125 °C | 4 |
| Electrostatic discharge voltage, HBM | VESD | | | 1.5 | kV | Human Body Model (HBM) per ANSI/ESDA/JEDEC JS-001-2010 | 4 |
| Electrostatic discharge voltage, CDM | VESD | | | 2 | kV | Charged Device Model (CDM) per JEDEC 22-C101B | 4 |
| Supply voltage | VCC | 3.3 | 5 | 5.25 | V | - | 4 |
| Case temperature | Tcase | -40 | | 85 | °C | - | 4 |
| Thermal resistance, junction to case | Rth(j-case) | | 50 | | K/W | footnotes [1] Case is ground solder pad; [2] measured with infrared technique, device on application board in still air | 4 |
## CAD (KiCad official)
- Symbol: `BGU8052X`
- Footprint: `Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm`
- 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
- 3D model files: `bgu8052x-etched.step` / `bgu8052x-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bgu8052x.step` / `bgu8052x.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [NXP Semicon datasheet](https://www.nxp.com/docs/en/data-sheet/BGU8052X.pdf) (16 pp, sha256 `2059d8b703fc66b3`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bgu8052x-datasheet.pdf)