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BGU8052X

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NXP Semicon RF Amplifiers, WSON-8-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BGU8052X

NXP Semicon · RF Amplifiers · WSON-8-EP(2x2)

BGU8052X from NXP Semicon, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VBIAS passive Bias voltage pin; the bias current is programmed by an external resistor Rbias (5.1 kΩ at VCC = 5 V, 2.3 kΩ at VCC = 3.3 V).
2 RF_IN input RF input of the low noise amplifier, with a 50 Ω characteristic impedance.
3 n.c. unconnected Not connected.
4 i.c. unconnected Internally connected; can be grounded or left open in the application.
5 i.c. unconnected Internally connected; can be grounded or left open in the application.
6 SHDN input Shutdown control: on state at ≤ 0.6 V and off state at ≥ 1.2 V, with an internal pull-down resistor of 20 kΩ; maximum shutdown control voltage is 3 V.
7 RF_OUT output RF output of the low noise amplifier, with a 50 Ω characteristic impedance.
8 i.c. unconnected Internally connected; can be grounded or left open in the application.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer NXP Semicon
Package WSON-8-EP(2x2)
Category RF & Radio
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply current, on state ICC 36 48 60 mA f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; Rbias = 5.1 kΩ 5
Associated gain, on state Gass 17 18.5 20 dB f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; Rbias = 5.1 kΩ 5
Noise figure NF 0.5 0.7 dB f = 1900 MHz; VCC = 5 V; Tamb = 25 °C; Rbias = 5.1 kΩ 5
Output third-order intercept point IP3O 32 36 dBm 2-tone; tone spacing = 1 MHz; Pi = -15 dBm per tone 5
Output third-order intercept point (footnote [2]) IP3O 30 34 dBm 2-tone; tone spacing = 1 MHz; Pi = -15 dBm per tone; footnote [2]: C1 and C2 = 100 pF for fast switching 5
Rollett stability factor K 1 both on state and off state up to f = 20 GHz 5
Shutdown control voltage, on state Vctrl(sd) 0.6 V on state; VCC = 5 V; Tamb = 25 °C; voltage on pin 6 (SHDN) 5
Shutdown control voltage, off state Vctrl(sd) 1.2 V off state; VCC = 5 V; Tamb = 25 °C; voltage on pin 6 (SHDN) 5
Supply voltage VCC 6 V - 4
Shutdown control voltage Vctrl(sd) 3 V - 4
Supply current ICC 85 mA - 4
Continuous waveform RF input power Pi(RF)CW 20 dBm continuous waveform 4
Storage temperature Tstg -40 150 °C - 4
Junction temperature Tj 150 °C - 4
Power dissipation P 510 mW Tcase ≤ 125 °C 4
Electrostatic discharge voltage, HBM VESD 1.5 kV Human Body Model (HBM) per ANSI/ESDA/JEDEC JS-001-2010 4
Electrostatic discharge voltage, CDM VESD 2 kV Charged Device Model (CDM) per JEDEC 22-C101B 4
Supply voltage VCC 3.3 5 5.25 V - 4
Case temperature Tcase -40 85 °C - 4
Thermal resistance, junction to case Rth(j-case) 50 K/W footnotes [1] Case is ground solder pad; [2] measured with infrared technique, device on application board in still air 4

CAD (KiCad official)

  • Symbol: BGU8052X
  • Footprint: Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm
  • 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: bgu8052x-etched.step / bgu8052x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bgu8052x.step / bgu8052x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NXP Semicon datasheet (16 pp, sha256 2059d8b703fc66b3, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF