# BFR93AE6327HTSA1

**Infineon Technologies** · Bipolar (BJT) · SOT-23-3

BFR93AE6327HTSA1 from Infineon Technologies, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal; the datasheet gives a maximum base current IB of 9 mA. |
| 2 | E | passive | Emitter terminal; the datasheet gives a maximum emitter-base voltage VEBO of 2 V. |
| 3 | C | passive | Collector terminal; the datasheet gives a maximum collector current IC of 90 mA and a maximum collector-emitter voltage VCEO of 12 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO |  |  | 12 | V |  | 1 |
| Collector-emitter voltage | VCES |  |  | 20 | V |  | 1 |
| Collector-base voltage | VCBO |  |  | 20 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | 2 | V |  | 1 |
| Collector current | IC |  |  | 90 | mA |  | 1 |
| Base current | IB |  |  | 9 | mA |  | 1 |
| Total power dissipation | Ptot |  |  | 300 | mW | TS ≤ 111 °C | 1 |
| Junction temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage temperature | TStg | -55 |  | 150 | °C |  | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 12 |  |  | V | IC = 1 mA, IB = 0 | 2 |
| Collector-emitter cutoff current | ICES |  |  | 100 | µA | VCE = 20 V, VBE = 0 | 2 |
| Collector-base cutoff current | ICBO |  |  | 100 | nA | VCB = 10 V, IE = 0 | 2 |
| Emitter-base cutoff current | IEBO |  |  | 10 | µA | VEB = 2.5 V, IC = 0 | 2 |
| DC current gain | hFE | 70 | 100 | 140 | - | IC = 30 mA, VCE = 8 V, pulse measured | 2 |
| Transition frequency | fT | 4.5 | 6 |  | GHz | IC = 30 mA, VCE = 8 V, f = 500 MHz | 3 |
| Collector-base capacitance | Ccb |  | 0.54 | 0.8 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 |
| Junction - soldering point thermal resistance | RthJS |  | 130 |  | K/W |  | 1 |

## CAD (KiCad official)

- Symbol: `BFR93AE6327HTSA1`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `bfr93ae6327htsa1-etched.step` / `bfr93ae6327htsa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bfr93ae6327htsa1.step` / `bfr93ae6327htsa1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918155129327616) (6 pp, sha256 `5613dc0c3b4df4a4`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bfr93ae6327htsa1-datasheet.pdf)